Gouri Sankar Kar
Gouri Sankar Kar
Program Director, IMEC Belgium
Verified email at imec.be
TitleCited byYear
1010nm2Hf/HfOxcrossbar resistive RAM with excellent performance, reliability and low-energy operation
B Govoreanu, GS Kar, YY Chen, V Paraschiv, S Kubicek, A Fantini, ...
2011 International Electron Devices Meeting, 31.6. 1-31.6. 4, 2011
5392011
Endurance/Retention Trade-off on Cap 1T1R Bipolar RRAM
YY Chen, L Goux, S Clima, B Govoreanu, R Degraeve, GS Kar, A Fantini, ...
IEEE Transactions on electron devices 60 (3), 1114-1121, 2013
1652013
Intrinsic switching variability in HfO2RRAM
A Fantini, L Goux, R Degraeve, DJ Wouters, N Raghavan, G Kar, ...
2013 5th IEEE International Memory Workshop, 30-33, 2013
1252013
IEEE Int. Electron Devices Meet
B Govoreanu, GS Kar, YY Chen, V Paraschiv, S Kubicek, A Fantini, ...
Tech. Dig 729, 2011
125*2011
Kinetic evolution and equilibrium morphology of strained islands
A Rastelli, M Stoffel, J Tersoff, GS Kar, OG Schmidt
Physical review letters 95 (2), 026103, 2005
1142005
Balancing SET/RESET Pulse for Endurance in 1T1R Bipolar RRAM
YY Chen, B Govoreanu, L Goux, R Degraeve, A Fantini, GS Kar, ...
IEEE Transactions on Electron devices 59 (12), 3243-3249, 2012
1132012
Dynamic ‘hour glass’ model for SET and RESET in HfO2RRAM
R Degraeve, A Fantini, S Clima, B Govoreanu, L Goux, YY Chen, ...
2012 Symposium on VLSI Technology (VLSIT), 75-76, 2012
942012
Improvement of data retention in HfO2/Hf 1T1R RRAM cell under low operating current
YY Chen, M Komura, R Degraeve, B Govoreanu, L Goux, A Fantini, ...
2013 IEEE International Electron Devices Meeting, 10.1. 1-10.1. 4, 2013
842013
IEEE Int. Electron Devices Meet
YY Chen, R Degraeve, S Clima, B Govoreanu, L Goux, A Fantini, GS Kar, ...
Tech. Dig 482, 2012
77*2012
Understanding of the endurance failure in scaled HfO2-based 1T1R RRAM through vacancy mobility degradation
YY Chen, R Degraeve, S Clima, B Govoreanu, L Goux, A Fantini, GS Kar, ...
2012 International Electron Devices Meeting, 20.3. 1-20.3. 4, 2012
712012
Charge storage and photoluminescence characteristics of silicon oxide embedded Ge nanocrystal trilayer structures
K Das, M NandaGoswami, R Mahapatra, GS Kar, A Dhar, HN Acharya, ...
Applied physics letters 84 (8), 1386-1388, 2004
672004
Ultralow sub-500nA operating current high-performance TiN\Al2O3\HfO2\Hf\TiN bipolar RRAM achieved through understanding-based stack-engineering
L Goux, A Fantini, G Kar, YY Chen, N Jossart, R Degraeve, S Clima, ...
2012 Symposium on VLSI Technology (VLSIT), 159-160, 2012
592012
Electron Devices Meeting
B Govoreanu, GS Kar, YY Chen, V Paraschiv, S Kubicek, A Fantini, ...
Technical Digest. IEEE International 31, 1-31.6, 0
50
Extended wavelength region of self-assembled Ge/Si (001) islands capped with Si at different temperatures
M Stoffel, U Denker, GS Kar, H Sigg, OG Schmidt
Applied physics letters 83 (14), 2910-2912, 2003
492003
Intrinsic switching behavior in HfO2 RRAM by fast electrical measurements on novel 2R test structures
A Fantini, DJ Wouters, R Degraeve, L Goux, L Pantisano, G Kar, YY Chen, ...
2012 4th IEEE International Memory Workshop, 1-4, 2012
482012
Field-driven ultrafast sub-ns programming in W\Al2O3\Ti\CuTe-based 1T1R CBRAM system
L Goux, K Sankaran, G Kar, N Jossart, K Opsomer, R Degraeve, ...
2012 Symposium on VLSI Technology (VLSIT), 69-70, 2012
472012
Analysis of complementary RRAM switching
DJ Wouters, L Zhang, A Fantini, R Degraeve, L Goux, YY Chen, ...
IEEE Electron Device Letters 33 (8), 1186-1188, 2012
462012
Material distribution across the interface of random and ordered island arrays
GS Kar, S Kiravittaya, M Stoffel, OG Schmidt
Physical review letters 93 (24), 246103, 2004
452004
Electrical and interfacial characteristics of ultrathin ZrO 2 gate dielectrics on strain compensated SiGeC/Si heterostructure
R Mahapatra, JH Lee, S Maikap, GS Kar, A Dhar, NM Hwang, DY Kim, ...
Applied physics letters 82 (14), 2320-2322, 2003
422003
BEOL compatible high tunnel magneto resistance perpendicular magnetic tunnel junctions using a sacrificial Mg layer as CoFeB free layer cap
J Swerts, S Mertens, T Lin, S Couet, Y Tomczak, K Sankaran, G Pourtois, ...
Applied Physics Letters 106 (26), 262407, 2015
382015
The system can't perform the operation now. Try again later.
Articles 1–20