Paul Voyles
Title
Cited by
Cited by
Year
Atomic-scale imaging of individual dopant atoms and clusters in highly n-type bulk Si
PM Voyles, DA Muller, JL Grazul, PH Citrin, HJL Gossmann
Nature 416 (6883), 826-829, 2002
4392002
The vertical replacement-gate (VRG) MOSFET: A 50-nm vertical MOSFET with lithography-independent gate length
JM Hergenrother, D Monroe, FP Klemens, A Komblit, GR Weber, ...
International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999
243*1999
Imaging individual atoms inside crystals with ADF-STEM
PM Voyles, JL Grazul, DA Muller
Ultramicroscopy 96 (3-4), 251-273, 2003
2412003
Picometre-precision analysis of scanning transmission electron microscopy images of platinum nanocatalysts
AB Yankovich, B Berkels, W Dahmen, P Binev, SI Sanchez, SA Bradley, ...
Nature communications 5 (1), 1-7, 2014
1952014
Morphology and crystallization kinetics in thin films grown by atomic layer deposition
MY Ho, H Gong, GD Wilk, BW Busch, ML Green, PM Voyles, DA Muller, ...
Journal of Applied Physics 93 (3), 1477-1481, 2003
1682003
Stabilization of copper catalysts for liquid‐phase reactions by atomic layer deposition
BJ O'Neill, DHK Jackson, AJ Crisci, CA Farberow, F Shi, AC Alba‐Rubio, ...
Angewandte Chemie International Edition 52 (51), 13808-13812, 2013
1622013
Evaluation of connectivity, flux pinning, and upper critical field contributions to the critical current density of bulk pure and SiC-alloyed
A Matsumoto, H Kumakura, H Kitaguchi, BJ Senkowicz, MC Jewell, ...
Applied physics letters 89 (13), 132508, 2006
1542006
High‐performance, quantum dot nanocomposites for nonlinear optical and optical gain applications
MA Petruska, AV Malko, PM Voyles, VI Klimov
Advanced Materials 15 (7‐8), 610-613, 2003
1462003
Nanoscale Structure and Structural Relaxation in Bulk Metallic Glass
J Hwang, ZH Melgarejo, YE Kalay, I Kalay, MJ Kramer, DS Stone, ...
Physical review letters 108 (19), 195505, 2012
1352012
Total reaction and 2n-removal cross sections of 20–60A MeV , , and on Si
RE Warner, RA Patty, PM Voyles, A Nadasen, FD Becchetti, JA Brown, ...
Physical Review C 54 (4), 1700, 1996
1271996
H2V3O8 Nanowire/Graphene Electrodes for Aqueous Rechargeable Zinc Ion Batteries with High Rate Capability and Large Capacity
Q Pang, C Sun, Y Yu, K Zhao, Z Zhang, PM Voyles, G Chen, Y Wei, ...
Advanced Energy Materials 8 (19), 1800144, 2018
1192018
Fast flexible electronics with strained silicon nanomembranes
H Zhou, JH Seo, DM Paskiewicz, Y Zhu, GK Celler, PM Voyles, W Zhou, ...
Scientific reports 3, 1291, 2013
1172013
Atom pair persistence in disordered materials from fluctuation microscopy
JM Gibson, MMJ Treacy, PM Voyles
Ultramicroscopy 83 (3-4), 169-178, 2000
1142000
Fluctuation microscopy in the STEM
PM Voyles, DA Muller
Ultramicroscopy 93 (2), 147-159, 2002
1062002
Absence of an abrupt phase change from polycrystalline to amorphous in silicon with deposition temperature
PM Voyles, JE Gerbi, MMJ Treacy, JM Gibson, JR Abelson
Physical review letters 86 (24), 5514, 2001
1042001
Fluctuation microscopy: a probe of atomic correlations in disordered materials
PM Voyles, JM Gibson, MMJ Treacy
Microscopy 49 (2), 259-266, 2000
1042000
Aluminum nanoscale order in amorphous measured by fluctuation electron microscopy
WG Stratton, J Hamann, JH Perepezko, PM Voyles, X Mao, SV Khare
Applied Physics Letters 86 (14), 141910, 2005
1012005
Structure and physical properties of paracrystalline atomistic models of amorphous silicon
PM Voyles, N Zotov, SM Nakhmanson, DA Drabold, JM Gibson, ...
Journal of Applied Physics 90 (9), 4437-4451, 2001
1002001
Depth-dependent imaging of individual dopant atoms in silicon
PM Voyles, DA Muller, EJ Kirkland
Microscopy and Microanalysis 10 (2), 291-300, 2004
952004
Medium-range order in amorphous silicon measured by fluctuation electron microscopy
PM Voyles, JR Abelson
Solar energy materials and solar cells 78 (1-4), 85-113, 2003
912003
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Articles 1–20