| Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ... Advanced Electronic Materials 5 (1), 1800143, 2019 | 630 | 2019 |
| Continuous analytic IV model for surrounding-gate MOSFETs D Jimenez, B Iniguez, J Sune, LF Marsal, J Pallares, J Roig, D Flores IEEE Electron Device Letters 25 (8), 571-573, 2004 | 352 | 2004 |
| On the breakdown statistics of very thin SiO2 films J Sune, I Placencia, N Barniol, E Farrés, F Martin, X Aymerich Thin solid films 185 (2), 347-362, 1990 | 303 | 1990 |
| New physics-based analytic approach to the thin-oxide breakdown statistics J Sune IEEE Electron Device Letters 22 (6), 296-298, 2001 | 294 | 2001 |
| Reliability wearout mechanisms in advanced CMOS technologies AW Strong, EY Wu, RP Vollertsen, J Sune, G La Rosa, TD Sullivan, ... John Wiley & Sons, 2009 | 274 | 2009 |
| Power-law voltage acceleration: A key element for ultra-thin gate oxide reliability EY Wu, J Suné Microelectronics reliability 45 (12), 1809-1834, 2005 | 191 | 2005 |
| Quantum-size effects in hafnium-oxide resistive switching S Long, X Lian, C Cagli, X Cartoixa, R Rurali, E Miranda, D Jiménez, ... Applied Physics Letters 102 (18), 2013 | 185 | 2013 |
| Standards for the characterization of endurance in resistive switching devices M Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suñe, AJ Kenyon, ... ACS nano 15 (11), 17214-17231, 2021 | 181 | 2021 |
| Modeling of nanoscale gate-all-around MOSFETs D Jimenez, JJ Saenz, B Iniguez, J Sune, LF Marsal, J Pallares IEEE Electron device letters 25 (5), 314-316, 2004 | 169 | 2004 |
| Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM S Long, L Perniola, C Cagli, J Buckley, X Lian, E Miranda, F Pan, M Liu, ... Scientific reports 3 (1), 2929, 2013 | 168 | 2013 |
| Interplay of voltage and temperature acceleration of oxide breakdown for ultra-thin gate oxides E Wu, J Sune, W Lai, E Nowak, J McKenna, A Vayshenker, D Harmon Solid-State Electronics 46 (11), 1787-1798, 2002 | 168 | 2002 |
| Electron transport through broken down ultra-thin SiO2 layers in MOS devices E Miranda, J Sune Microelectronics Reliability 44 (1), 1-23, 2004 | 154 | 2004 |
| A model for the set statistics of RRAM inspired in the percolation model of oxide breakdown S Long, X Lian, C Cagli, L Perniola, E Miranda, M Liu, J Suñé IEEE electron device letters 34 (8), 999-1001, 2013 | 139 | 2013 |
| Quantum-mechanical modeling of accumulation layers in MOS structure J Sune, P Olivo, B Ricco IEEE Transactions on Electron Devices 39 (7), 1732-1739, 1992 | 137 | 1992 |
| Conductance quantization in resistive random access memory Y Li, S Long, Y Liu, C Hu, J Teng, Q Liu, H Lv, J Suñé, M Liu Nanoscale research letters 10, 1-30, 2015 | 134 | 2015 |
| Experimental evidence of T/sub BD/power-law for voltage dependence of oxide breakdown in ultrathin gate oxides EY Wu, A Vayshenker, E Nowak, J Sune, RP Vollertsen, W Lai, D Harmon IEEE Transactions on Electron Devices 49 (12), 2244-2253, 2002 | 134 | 2002 |
| Cycle-to-Cycle Intrinsic RESET Statistics in -Based Unipolar RRAM Devices S Long, X Lian, T Ye, C Cagli, L Perniola, E Miranda, M Liu, J Sune IEEE electron device letters 34 (5), 623-625, 2013 | 130 | 2013 |
| Analytic modeling of leakage current through multiple breakdown paths in SiO/sub 2/films E Miranda, J Suñé 2001 IEEE International Reliability Physics Symposium Proceedings. 39th …, 2001 | 127 | 2001 |
| Soft breakdown conduction in ultrathin (3-5 nm) gate dielectrics E Miranda, J Suñé, R Rodríguez, M Nafria, X Aymerich, L Fonseca, ... IEEE Transactions on Electron Devices 47 (1), 82-89, 2000 | 127 | 2000 |
| Analysis and modeling of resistive switching statistics S Long, C Cagli, D Ielmini, M Liu, J Sune Journal of Applied Physics 111 (7), 2012 | 124 | 2012 |
Enrique MirandaUniversitat Autonoma de BarcelonaVerified email at uab.cat
