| High-performance self-aligned inversion-channel In0. 53Ga0. 47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕ Ga2O3 (Gd2O3) as gate dielectrics TD Lin, HC Chiu, P Chang, LT Tung, CP Chen, M Hong, J Kwo, W Tsai, ... Applied Physics Letters 93 (3), 2008 | 176 | 2008 |
| Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2O3 as gate dielectric YC Chang, WH Chang, HC Chiu, LT Tung, CH Lee, KH Shiu, M Hong, ... Applied Physics Letters 93 (5), 2008 | 81 | 2008 |
| Achieving a low interfacial density of states in atomic layer deposited Al2O3 on In0. 53Ga0. 47As HC Chiu, LT Tung, YH Chang, YJ Lee, CC Chang, J Kwo, M Hong Applied Physics Letters 93 (20), 2008 | 72 | 2008 |
| 1nm equivalent oxide thickness in Ga2O3 (Gd2O3)∕ In0. 2Ga0. 8As metal-oxide-semiconductor capacitors KH Shiu, TH Chiang, P Chang, LT Tung, M Hong, J Kwo, W Tsai Applied Physics Letters 92 (17), 2008 | 64 | 2008 |
| Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y2O3 on Ge LK Chu, WC Lee, ML Huang, YH Chang, LT Tung, CC Chang, YJ Lee, ... Journal of crystal growth 311 (7), 2195-2198, 2009 | 47 | 2009 |
| Molecular beam epitaxy grown Ga2O3 (Gd2O3) high κ dielectrics for germanium passivation-x-ray photoelectron spectroscopy and electrical characteristics CH Lee, TD Lin, LT Tung, ML Huang, M Hong, J Kwo Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008 | 24 | 2008 |
| Molecular beam epitaxy-grown Al2O3/HfO2 high-κ dielectrics for germanium WC Lee, BH Chin, LK Chu, TD Lin, YJ Lee, LT Tung, CH Lee, M Hong, ... Journal of crystal growth 311 (7), 2187-2190, 2009 | 19 | 2009 |
| Al2O3/Ga2O3 (Gd2O3) passivation on In0. 20Ga0. 80As/GaAs—structural intactness with high-temperature annealing YJ Lee, CH Lee, LT Tung, TH Chiang, TY Lai, J Kwo, CH Hsu, M Hong Journal of Physics D: Applied Physics 43 (13), 135101, 2010 | 13 | 2010 |
| Oxide scalability in Al2O3∕ Ga2O3 (Gd2O3)∕ In0. 20Ga0. 80As∕ GaAs heterostructures KH Shiu, CH Chiang, YJ Lee, WC Lee, P Chang, LT Tung, M Hong, J Kwo, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008 | 12 | 2008 |
| Tri-gate graphene nanoribbon transistors with transverse-field bandgap modulation LT Tung, MV Mateus, EC Kan IEEE Transactions on Electron Devices 61 (9), 3329-3334, 2014 | 10 | 2014 |
| Growth and structural characteristics of GaN∕ AlN/nanothick γ-Al2O3∕ Si (111) WC Lee, YJ Lee, LT Tung, SY Wu, CH Lee, M Hong, HM Ng, J Kwo, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008 | 9 | 2008 |
| Sharp switching by field-effect bandgap modulation in all-graphene side-gate transistors LT Tung, EC Kan IEEE Journal of the Electron Devices Society 3 (3), 144-148, 2015 | 7 | 2015 |
| Interface and oxide quality of CoFeB/MgO/Si tunnel junctions JT Shaw, HW Tseng, S Rajwade, LT Tung, RA Buhrman, EC Kan Journal of Applied Physics 111 (9), 2012 | 2 | 2012 |
| Side-gate-controlled dual-mode power gating device by graphene nanoribbon transistor LT Tung, EC Kan 71st Device Research Conference, 87-88, 2013 | 1 | 2013 |
| Transverse-field bandgap modulation on graphene nanoribbon transistors by double-self-aligned spacers LT Tung, MV Mateus, EC Kan 70th Device Research Conference, 113-114, 2012 | 1 | 2012 |
| High performance Ga 2 O 3 (Gd 2 O 3)/Ge MOS devices without interfacial layers LK Chu, RL Chu, ML Huang, LT Tung, TD Lin, CC Chang, J Kwo, M Hong 2009 Proceedings of the European Solid State Device Research Conference, 407-410, 2009 | | 2009 |
| Metal-oxide-semiconductor devices with UHV-Ga2O3(Gd2O3) on Ge(100) LK Chu, TD Lin, CH Lee, LT Tung, WC Lee, RL Chu, CC Chang, M Hong, ... 2009 International Symposium on VLSI Technology, Systems, and Applications …, 2009 | | 2009 |
| Inversion-channel GaN MOSFET using atomic-layer-deposited Al2O3 as gate dielectric YC Chang, WH Chang, HC Chiu, YH Chang, LT Tung, CH Lee, M Hong, ... 2009 International Symposium on VLSI Technology, Systems, and Applications …, 2009 | | 2009 |
| Growth and structural characteristics of /nanothick (111) WC Lee, YJ Lee, LT Tung, SY Wu, CH Lee, M Hong, HM Ng, J Kwo, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008 | | 2008 |
| Interfacial-layers-free Ga2O3(Gd2O3)/Ge MOS Diodes CH Lee, TD Lin, KY Lee, ML Huang, LT Tung, M Hong, J Kwo APS March Meeting Abstracts, Q35. 010, 2008 | | 2008 |
