| Flat SiC semiconductor substrate M Loboda, C Parfeniuk US Patent 9,018,639, 2015 | 379 | 2015 |
| Method for producing hydrogenated silicon oxycarbide films having low dielectric constant MJ Loboda, JA Seifferly US Patent 6,159,871, 2000 | 259 | 2000 |
| Properties of a‐SiO x: H Thin Films Deposited from Hydrogen Silsesquioxane Resins MJ Loboda, CM Grove, RF Schneider Journal of the Electrochemical Society 145 (8), 2861, 1998 | 223 | 1998 |
| New solutions for intermetal dielectrics using trimethylsilane-based PECVD processes MJ Loboda Microelectronic Engineering 50 (1-4), 15-23, 2000 | 147 | 2000 |
| Silicon carbide metal diffusion barrier layer MJ Loboda, KW Michael US Patent 5,818,071, 1998 | 131 | 1998 |
| Growth of crystalline 3C‐SiC on Si at reduced temperatures by chemical vapor deposition from silacyclobutane AJ Steckl, C Yuan, JP Li, MJ Loboda Applied physics letters 63 (24), 3347-3349, 1993 | 117 | 1993 |
| Heteroepitaxial growth of SiC on Si (100) and (111) by chemical vapor deposition using trimethylsilane S Madapura, AJ Steckl, M Loboda Journal of the electrochemical society 146 (3), 1197, 1999 | 107 | 1999 |
| Coated substrates and methods for their preparation M Loboda, S Snow, W Weidner, L Zambov US Patent 7,736,728, 2010 | 95 | 2010 |
| Plasma‐enhanced chemical vapor deposition of a‐SiC:H films from organosilicon precursors MJ Loboda, JA Seifferly, FC Dall Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 12 (1 …, 1994 | 85 | 1994 |
| Stacking faults created by the combined deflection of threading dislocations of Burgers vector c and c+ a during the physical vapor transport growth of 4H–SiC M Dudley, F Wu, H Wang, S Byrappa, B Raghothamachar, G Choi, S Sun, ... Applied Physics Letters 98 (23), 2011 | 81 | 2011 |
| Method of forming crystalline silicon carbide coatings MJ Loboda US Patent 5,465,680, 1995 | 80 | 1995 |
| Extremely low-phase-noise SAW resonators and oscillators: design and performance GK Montress, TE Parker, MJ Loboda, JA Greer IEEE transactions on ultrasonics, ferroelectrics, and frequency control 35 …, 1988 | 75 | 1988 |
| Effect of carbonization on the growth of 3C‐SiC on Si (111) by silacyclobutane C Yuan, AJ Steckl, MJ Loboda Applied physics letters 64 (22), 3000-3002, 1994 | 67 | 1994 |
| Semiconductor chips suitable for known good die testing RC Camilletti, MJ Loboda, KW Michael US Patent 5,693,565, 1997 | 66 | 1997 |
| Residual phase noise measurements of VHF, UHF, and microwave components GK Montress, TE Parker, MJ Loboda IEEE transactions on ultrasonics, ferroelectrics, and frequency control 41 …, 1994 | 61 | 1994 |
| Chemical influence of inert gas on the thin film stress in plasma-enhanced chemical vapor deposited a-SiN: H films MJ Loboda, JA Seifferly Journal of Materials Research 11 (2), 391-398, 1996 | 58 | 1996 |
| Understanding hydrogen silsesquioxane-based dielectric film processing MJ Loboda, GA Toskey Solid state technology 41 (5), 99-103, 1998 | 56 | 1998 |
| Evidence of negative bias temperature instability in 4H-SiC metal oxide semiconductor capacitors MJ Marinella, DK Schroder, T Isaacs-Smith, AC Ahyi, JR Williams, ... Applied Physics Letters 90 (25), 2007 | 54 | 2007 |
| Method for producing hydrogenated silicon oxycarbide films having low dielectric constant MJ Loboda, JA Seifferly US Patent 6,593,655, 2003 | 53 | 2003 |
| H: SiOC coated substrates GA Cerny, BK Hwang, MJ Loboda US Patent 6,667,553, 2003 | 45 | 2003 |
