| Gallium arsenide grown by molecular beam epitaxy at low temperatures: Crystal structure, properties, superconductivity NA BERNT, AI Veinger, BR SEMYAGIN, VV TRET'YAKOV, ... Physics of the solid state 35 (10), 1289-1297, 1993 | 80 | 1993 |
| Nanometer-size atomic clusters in semiconductors—a new approach to tailoring material properties MG Mil’vidskii, VV Chaldyshev Semiconductors 32 (5), 457-465, 1998 | 79 | 1998 |
| Molecular beam epitaxy growth and characterization of thin (< 2 mu m) GaSb layers on GaAs (100) substrates SV Ivanov, PD Altukhov, TS Argunova, AA Bakun, AA Budza, ... Semiconductor science and technology 8 (3), 347, 1993 | 51 | 1993 |
| Investigation of dislocation loops associated with As–Sb nanoclusters in GaAs VV Chaldyshev, AL Kolesnikova, NA Bert, AE Romanov Journal of applied physics 97 (2), 2005 | 48 | 2005 |
| Optical lattices of InGaN quantum well excitons VV Chaldyshev, AS Bolshakov, EE Zavarin, AV Sakharov, WV Lundin, ... Applied Physics Letters 99 (25), 2011 | 47 | 2011 |
| Two-dimensional organization of As clusters in GaAs VV Chaldyshev Materials Science and Engineering: B 88 (2-3), 195-204, 2002 | 46 | 2002 |
| Local stresses induced by nanoscale As–Sb clusters in GaAs matrix VV Chaldyshev, NA Bert, AE Romanov, AA Suvorova, AL Kolesnikova, ... Applied Physics Letters 80 (3), 377-379, 2002 | 43 | 2002 |
| Two-dimensional precipitation of As clusters due to indium delta-doping of GaAs films grown by molecular beam epitaxy at low temperature NA Bert, VV Chaldyshev, NN Faleev, AE Kunitsyn, DI Lubyshev, ... Semiconductor science and technology 12 (1), 51, 1997 | 42 | 1997 |
| Determination of stress, strain, and elemental distribution within In (Ga) As quantum dots embedded in GaAs using advanced transmission electron microscopy N Cherkashin, S Reboh, MJ Hÿtch, A Claverie, VV Preobrazhenskii, ... Applied Physics Letters 102 (17), 2013 | 41 | 2013 |
| Resonant optical reflection by a periodic system of the quantum well excitons at the second quantum state VV Chaldyshev, Y Chen, AN Poddubny, AP Vasil’ev, Z Liu Applied Physics Letters 98 (7), 2011 | 41 | 2011 |
| In–Ga intermixing in low-temperature grown GaAs delta doped with In NA Bert, VV Chaldyshev, YG Musikhin, AA Suvorova, VV Preobrazhenskii, ... Applied physics letters 74 (10), 1442-1444, 1999 | 40 | 1999 |
| Enhanced precipitation of excess As on antimony delta layers in low-temperature-grown GaAs NA Bert, VV Chaldyshev, AA Suvorova, VV Preobrazhenskii, MA Putyato, ... Applied Physics Letters 74 (11), 1588-1590, 1999 | 38 | 1999 |
| Enhanced As–Sb intermixing of GaSb monolayer superlattices in low-temperature grown GaAs VV Chaldyshev, NA Bert, YG Musikhin, AA Suvorova, VV Preobrazhenskii, ... Applied Physics Letters 79 (9), 1294-1296, 2001 | 37 | 2001 |
| Enhanced arsenic excess in low-temperature grown GaAs due to indium doping NA Bert, VV Chaldyshev, AE Kunitsyn, YG Musikhin, NN Faleev, ... Applied physics letters 70 (23), 3146-3148, 1997 | 33 | 1997 |
| Stress relaxation scenario for buried quantum dots VV Chaldyshev, NA Bert, AL Kolesnikova, AE Romanov Physical Review B 79 (23), 233304, 2009 | 30 | 2009 |
| Elastic behavior of a spherical inclusion with a given uniaxial dilatation NA Bert, AL Kolesnikova, AE Romanov, VV Chaldyshev Physics of the Solid State 44, 2240-2250, 2002 | 26 | 2002 |
| Elastic-energy relaxation in heterostructures with strained nanoinclusions AL Kolesnikova, AE Romanov, VV Chaldyshev Physics of the Solid State 49, 667-674, 2007 | 24 | 2007 |
| Room temperature exciton-polariton resonant reflection and suppressed absorption in periodic systems of InGaN quantum wells AS Bolshakov, VV Chaldyshev, EE Zavarin, AV Sakharov, WV Lundin, ... Journal of Applied Physics 121 (13), 2017 | 22 | 2017 |
| Structural transformations in low-temperature grown GaAs: Sb DA Vasyukov, MV Baidakova, VV Chaldyshev, AA Suvorova, ... Journal of Physics D: Applied Physics 34 (10A), A15, 2001 | 20 | 2001 |
| Spatial ordering of arsenic clusters in GaAs layers grown by molecular-beam epitaxy at low temperature NA Bert, VV Chaldyshev, DI Lubyshev, VV Preobrazhenskii, ... Semiconductors 29 (12), 1170-1171, 1995 | 20 | 1995 |
