| Efficient high-power laser diodes P Crump, G Erbert, H Wenzel, C Frevert, CM Schultz, KH Hasler, R Staske, ... IEEE Journal of Selected Topics in Quantum Electronics 19 (4), 1501211-1501211, 2013 | 170 | 2013 |
| Mechanisms of fast self pulsations in two-section DFB lasers H Wenzel, U Bandelow, HJ Wunsche, J Rehberg IEEE journal of quantum electronics 32 (1), 69-78, 1996 | 160 | 1996 |
| The effective frequency method in the analysis of vertical-cavity surface-emitting lasers H Wenzel, HJ Wunsche IEEE Journal of Quantum Electronics 33 (7), 1156-1162, 1997 | 144 | 1997 |
| Comparison of optical VCSEL models on the simulation of oxide-confined devices P Bienstman, R Baets, J Vukusic, A Larsson, MJ Noble, M Brunner, ... IEEE Journal of Quantum Electronics 37 (12), 1618-1631, 2001 | 119 | 2001 |
| Measurement and simulation of distributed-feedback tapered master-oscillator power amplifiers M Spreemann, M Lichtner, M Radziunas, U Bandelow, H Wenzel IEEE Journal of Quantum Electronics 45 (6), 609-616, 2009 | 112 | 2009 |
| High-power 808 nm lasers with a super-large optical cavity A Knauer, G Erbert, R Staske, B Sumpf, H Wenzel, M Weyers Semiconductor science and technology 20 (6), 621, 2005 | 111 | 2005 |
| High-brightness quantum well tapered lasers B Sumpf, KH Hasler, P Adamiec, F Bugge, F Dittmar, JÖ Fricke, H Wenzel, ... IEEE Journal of Selected Topics in Quantum Electronics 15 (3), 1009-1020, 2009 | 110 | 2009 |
| 12 W high-brightness single-frequency DBR tapered diode laser C Fiebig, G Blume, C Kaspari, D Feise, J Fricke, M Matalla, W John, ... Electronics letters 44 (21), 1253-1255, 2008 | 105 | 2008 |
| Improved theory of the refractive-index change in quantum-well lasers H Wenzel, G Erbert, PM Enders IEEE Journal of Selected Topics in Quantum Electronics 5 (3), 637-642, 1999 | 102 | 1999 |
| 20W continuous wave reliable operation of 980nm broad-area single emitter diode lasers with an aperture of 96um P Crump, G Blume, K Paschke, R Staske, A Pietrzak, U Zeimer, S Einfeldt, ... High-Power Diode Laser Technology and Applications VII 7198, 719814, 2009 | 94 | 2009 |
| 12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells F Bugge, G Erbert, J Fricke, S Gramlich, R Staske, H Wenzel, U Zeimer, ... Applied Physics Letters 79 (13), 1965-1967, 2001 | 85 | 2001 |
| 980-nm DBR lasers using higher order gratings defined by i-line lithography J Fricke, H Wenzel, M Matalla, A Klehr, G Erbert Semiconductor science and technology 20 (11), 1149, 2005 | 84 | 2005 |
| Theoretical and experimental investigations of the limits to the maximum output power of laser diodes H Wenzel, P Crump, A Pietrzak, X Wang, G Erbert, G Tränkle New Journal of Physics 12 (8), 085007, 2010 | 80 | 2010 |
| Optical in-well pumping of a semiconductor disk laser with high optical efficiency SS Beyertt, M Zorn, T Kubler, H Wenzel, M Weyers, A Giesen, G Trankle, ... IEEE journal of quantum electronics 41 (12), 1439-1449, 2005 | 79 | 2005 |
| High-power 810-nm GaAsP-AlGaAs diode lasers with narrow beam divergence J Sebastian, G Beister, F Bugge, E Buhrandt, G Erbert, HG Hansel, ... IEEE Journal of Selected Topics in Quantum Electronics 7 (2), 334-339, 2001 | 79 | 2001 |
| Fundamental-lateral mode stabilized high-power ridge-waveguide lasers with a low beam divergence H Wenzel, F Bugge, M Dallmer, F Dittmar, J Fricke, KH Hasler, G Erbert IEEE Photonics Technology Letters 20 (3), 214-216, 2008 | 78 | 2008 |
| Root-cause analysis of peak power saturation in pulse-pumped 1100 nm broad area single emitter diode lasers X Wang, P Crump, H Wenzel, A Liero, T Hoffmann, A Pietrzak, CM Schultz, ... IEEE Journal of Quantum Electronics 46 (5), 658-665, 2010 | 72 | 2010 |
| Nonlinear properties of tapered laser cavities S Sujecki, L Borruel, J Wykes, P Moreno, B Sumpf, P Sewell, H Wenzel, ... IEEE Journal of selected topics in quantum electronics 9 (3), 823-834, 2003 | 71 | 2003 |
| High-power tensile-strained GaAsP-AlGaAs quantum-well lasers emitting between 715 and 790 nm G Erbert, F Bugge, A Knauer, J Sebastian, A Thies, H Wenzel, M Weyers, ... IEEE Journal of selected topics in quantum electronics 5 (3), 780-784, 1999 | 68 | 1999 |
| Experimental and theoretical analysis of the dominant lateral waveguiding mechanism in 975 nm high power broad area diode lasers P Crump, S Böldicke, CM Schultz, H Ekhteraei, H Wenzel, G Erbert Semiconductor Science and Technology 27 (4), 045001, 2012 | 67 | 2012 |
Olaf BroxFerdinand-Braun-InstitutVerified email at fbh-berlin.de
