| Semiconductor quantum dots as an ideal source of polarization-entangled photon pairs on-demand: a review D Huber, M Reindl, J Aberl, A Rastelli, R Trotta Journal of Optics 20 (7), 073002, 2018 | 141 | 2018 |
| Strain-tuning of the optical properties of semiconductor nanomaterials by integration onto piezoelectric actuators J Martín-Sánchez, R Trotta, A Mariscal, R Serna, G Piredda, S Stroj, ... Semiconductor Science and Technology 33 (1), 013001, 2018 | 95 | 2018 |
| Inversion of the exciton built-in dipole moment in In (Ga) As quantum dots via nonlinear piezoelectric effect J Aberl, P Klenovský, JS Wildmann, J Martín-Sánchez, T Fromherz, ... Physical Review B 96 (4), 045414, 2017 | 31 | 2017 |
| Effect of second-order piezoelectricity on the excitonic structure of stress-tuned In (Ga) As/GaAs quantum dots P Klenovský, P Steindl, J Aberl, E Zallo, R Trotta, A Rastelli, T Fromherz Physical Review B 97 (24), 245314, 2018 | 28 | 2018 |
| SiGe quantum well infrared photodetectors on strained-silicon-on-insulator J Aberl, M Brehm, T Fromherz, J Schuster, J Frigerio, P Rauter Optics Express 27 (22), 32009-32018, 2019 | 22 | 2019 |
| In-situ annealing and hydrogen irradiation of defect-enhanced germanium quantum dot light sources on silicon L Spindlberger, J Aberl, A Polimeni, J Schuster, J Hörschläger, T Truglas, ... Crystals 10 (5), 351, 2020 | 17 | 2020 |
| Composition Dependent Electrical Transport in Si1−xGex Nanosheets with Monolithic Single-Elementary Al Contacts L Wind, M Sistani, R Böckle, J Smoliner, L Vukŭsić, J Aberl, M Brehm, ... Small, 2204178, 2022 | 14 | 2022 |
| Advanced preparation of plan-view specimens on a MEMS chip for in situ TEM heating experiments A Minenkov, N Šantić, T Truglas, J Aberl, L Vukušić, M Brehm, H Groiss MRS bulletin 47 (4), 359-370, 2022 | 13 | 2022 |
| Advanced hydrogenation process applied on Ge on Si quantum dots for enhanced light emission L Spindlberger, M Kim, J Aberl, T Fromherz, F Schäffler, F Fournel, ... Applied Physics Letters 118 (8), 2021 | 13 | 2021 |
| Reconfigurable Field-Effect Transistor Technology via Heterogeneous Integration of SiGe with Crystalline Al Contacts A Fuchsberger, L Wind, M Sistani, R Behrle, D Nazzari, J Aberl, ... Advanced Electronic Materials, 2201259, 2023 | 11 | 2023 |
| Thermal Stability of Defect‐Enhanced Ge on Si Quantum Dot Luminescence upon Millisecond Flash Lamp Annealing L Spindlberger, S Prucnal, J Aberl, M Brehm physica status solidi (a) 216 (17), 1900307, 2019 | 11 | 2019 |
| Photoluminescence enhancement by deterministically site-controlled, vertically stacked SiGe quantum dots J Schuster, J Aberl, L Vukušić, L Spindlberger, H Groiss, T Fromherz, ... Scientific Reports 11 (1), 20597, 2021 | 10 | 2021 |
| Relaxation delay of Ge‐rich epitaxial SiGe films on Si (001) A Salomon, J Aberl, L Vukušić, M Hauser, T Fromherz, M Brehm physica status solidi (a) 219 (17), 2200154, 2022 | 6 | 2022 |
| Single SiGe quantum dot emission deterministically enhanced in a high-Q photonic crystal resonator T Poempool, J Aberl, M Clementi, L Spindlberger, L Vukušić, M Galli, ... Optics Express 31 (10), 15564-15578, 2023 | 2 | 2023 |
| A Runtime Reconfigurable Ge Field-Effect Transistor With Symmetric On-States A Fuchsberger, L Wind, D Nazzari, L Kühberger, D Popp, J Aberl, ... IEEE Journal of the Electron Devices Society, 2024 | 1 | 2024 |
| Strain-induced dynamic control over the population of quantum emitters in two-dimensional materials M Savaresi, A Martínez-Suárez, D Tedeschi, G Ronco, ... arXiv preprint arXiv:2301.10273, 2023 | 1 | 2023 |
| Telecom Photon Emitters Based on Isolated Group-IV Quantum Dots Deterministically Coupled to High-Q Photonic Crystal Cavities T Poempool, J Aberl, M Clementi, L Spindlberger, L Vukusic, M Galli, ... 245th ECS Meeting (May 26-30, 2024), 2024 | | 2024 |
| Epitaxial Group-IV Quantum Dots as Room-Temperature Light Emitters L Spindlberger, J Aberl, FM Armando, T Fromherz, M Brehm 245th ECS Meeting (May 26-30, 2024), 2024 | | 2024 |
| High-Quality Ge-Rich Nanosheets on Silicon on Insulator Substrates Based on Ultra-Low Temperature Epitaxy C Wilflingseder, E Prado-Navarrete, A Salomon, T Fromherz, J Aberl, ... 245th ECS Meeting (May 26-30, 2024), 2024 | | 2024 |
| All epitaxial self-assembly of vertically-confined silicon color centers using ultra-low temperature epitaxy J Aberl, EP Navarrete, M Karaman, DH Enriquez, C Wilflingseder, ... arXiv preprint arXiv:2402.19227, 2024 | | 2024 |
Moritz BrehmJohannes Kepler University LinzVerified email at jku.at
