Simon Hammersley
Simon Hammersley
Research Associate, University of Manchester
Verified email at manchester.ac.uk
Title
Cited by
Cited by
Year
The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures
S Hammersley, D Watson-Parris, P Dawson, MJ Godfrey, TJ Badcock, ...
Journal of Applied Physics 111 (8), 083512, 2012
1242012
Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions
S Hammersley, MJ Kappers, FCP Massabuau, SL Sahonta, P Dawson, ...
Appl. Phys. Lett. 107, 132106, 2015
532015
Investigation of unintentional indium incorporation into GaN barriers of InGaN/GaN quantum well structures
FCP Massabuau, MJ Davies, WE Blenkhorn, S Hammersley, MJ Kappers, ...
physica status solidi (b) 252 (5), 928-935, 2015
222015
Carrier density dependent localization and consequences for efficiency droop in InGaN/GaN quantum well structures
TJ Badcock, S Hammersley, D Watson-Parris, P Dawson, MJ Godfrey, ...
Japanese Journal of Applied Physics 52 (8S), 08JK10, 2013
202013
Supplemental Blue LED Lighting Array to Improve the Signal Quality in Hyperspectral Imaging of Plants
AK Mahlein, S Hammersley, EC Oerke, HW Dehne, H Goldbach, B Grieve
Sensors 15 (6), 12834-12840, 2015
172015
Study of efficiency droop and carrier localisation in an InGaN/GaN quantum well structure
S Hammersley, TJ Badcock, D Watson‐Parris, MJ Godfrey, P Dawson, ...
physica status solidi c 8 (7‐8), 2194-2196, 2011
172011
Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells
MJ Davies, P Dawson, S Hammersley, T Zhu, MJ Kappers, CJ Humphreys, ...
Applied Physics Letters 108 (25), 252101, 2016
162016
Photoluminescence studies of cubic GaN epilayers
SA Church, S Hammersley, PW Mitchell, MJ Kappers, SL Sahonta, ...
physica status solidi (b) 254 (8), 1600733, 2017
152017
Diatom frustules as a biomineralized scaffold for the growth of molybdenum disulfide nanosheets
EA Lewis, DJ Lewis, AA Tedstone, G Kime, S Hammersley, P Dawson, ...
Chemistry of Materials 28 (16), 5582-5586, 2016
132016
A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers
MJ Davies, S Hammersley, FCP Massabuau, P Dawson, RA Oliver, ...
Journal of Applied Physics 119 (5), 055708, 2016
122016
Localized multispectral crop imaging sensors: Engineering & validation of a cost effective plant stress and disease sensor
B Grieve, S Hammersley, AK Mahlein, EC Oerke, H Goldbach
2015 IEEE Sensors Applications Symposium (SAS), 1-6, 2015
92015
Room temperature PL efficiency of InGaN/GaN quantum well structures with prelayers as a function of number of quantum wells
GM Christian, S Hammersley, MJ Davies, P Dawson, MJ Kappers, ...
physica status solidi (c) 13 (5‐6), 248-251, 2016
82016
Optical and structural properties of dislocations in InGaN
FCP Massabuau, MK Horton, E Pearce, S Hammersley, P Chen, ...
Journal of Applied Physics 125 (16), 165701, 2019
72019
Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures
S Hammersley, MJ Kappers, FCP Massabuau, SL Sahonta, P Dawson, ...
physica status solidi (c) 13 (5‐6), 209-213, 2016
62016
Carrier distributions in InGaN/GaN light‐emitting diodes
S Hammersley, MJ Davies, P Dawson, RA Oliver, MJ Kappers, ...
physica status solidi (b) 252 (5), 890-894, 2015
52015
On the origin of blue‐green emission from heteroepitaxial nonpolar a‐plane InGaN quantum wells
MJ Kappers, TJ Badcock, R Hao, MA Moram, S Hammersley, P Dawson, ...
physica status solidi c 9 (3‐4), 465-468, 2012
52012
Effect of stacking faults on the photoluminescence spectrum of zincblende GaN
SA Church, S Hammersley, PW Mitchell, MJ Kappers, LY Lee, ...
Journal of Applied Physics 123 (18), 185705, 2018
42018
Processing online crop disease warning information via sensor networks using ISA ontologies
P Jackman, AJG Gray, A Brass, R Stevens, M Shi, D Scuffell, ...
Agricultural Engineering International: CIGR Journal 15 (3), 243-251, 2013
42013
Carrier dynamics in non‐polar GaN/AlGaN quantum wells intersected by basal‐plane stacking faults
TJ Badcock, S Hammersley, MJ Kappers, CJ Humphreys, P Dawson
physica status solidi c 7 (7‐8), 1894-1896, 2010
42010
Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength
GM Christian, S Schulz, S Hammersley, MJ Kappers, M Frentrup, ...
Japanese Journal of Applied Physics 58 (SC), SCCB09, 2019
22019
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