| A stand-alone, physics-based, measurement-driven model and simulation tool for random telegraph signals originating from experimentally identified MOS gate-oxide defects M Nour, Z Çelik-Butler, A Sonnet, FC Hou, S Tang, G Mathur IEEE Transactions on Electron Devices 63 (4), 1428-1436, 2016 | 18 | 2016 |
| Variability of random telegraph noise in analog MOS transistors M Nour, MI Mahmud, Z Çelik-Butler, D Basu, S Tang, FC Hou, R Wise 2013 22nd International Conference on Noise and Fluctuations (ICNF), 1-4, 2013 | 11 | 2013 |
| Measurements, modeling, and simulation of semiconductor/gate dielectric defects using random telegraph signals M Nour The University of Texas at Arlington, 2015 | 10 | 2015 |
| Random telegraph signals originating from unrelaxed neutral oxygen vacancy centres in SiO2 M Nour, Z Çelik‐Butler, A Sonnet, FC Hou, S Tang Electronics Letters 51 (20), 1610-1611, 2015 | 9 | 2015 |
| A scalable random telegraph signal simulation based on experimentally—Identified gate oxide defects MA Nour, A Rouf, Z Çelik-Butler, FC Hou, S Tang, A Sonnet, G Mathur 2015 International Conference on Noise and Fluctuations (ICNF), 1-4, 2015 | 3 | 2015 |
| TID Effects on Random Telegraph Signals in Bulk 90 nm MOSFET Devices J Neuendank, F Al Mamun, H Barnaby, S Bonaldo, M Spear, T Wallace, ... 2023 IEEE International Integrated Reliability Workshop (IIRW), 1-5, 2023 | | 2023 |
