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Jeng Gong
Jeng Gong
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Cited by
Year
Unipolar Switching Behaviors of RTO RRAM
WC Chien, YC Chen, EK Lai, YD Yao, P Lin, SF Horng, J Gong, TH Chou, ...
IEEE electron device letters 31 (2), 126-128, 2010
1222010
A multi-layer stackable thin-film transistor (TFT) NAND-type flash memory
EK Lai, HT Lue, YH Hsiao, JY Hsieh, CP Lu, SY Wang, LW Yang, T Yang, ...
2006 International Electron Devices Meeting, 1-4, 2006
1082006
High detectivity InGaN-GaN multiquantum well pn junction photodiodes
YZ Chiou, YK Su, SJ Chang, J Gong, YC Lin, SH Liu, CS Chang
IEEE journal of quantum electronics 39 (5), 681-685, 2003
832003
High voltage device having reduced on-state resistance
RY Su, PY Chiang, J Gong, TY Huang, CL Tsai, CC Chou
US Patent 8,159,029, 2012
762012
IEEE Trans. Electron Devices
WP Hong, WL Laih, YW Chen, YK Fang, CY Chang, J Gong
IEEE Trans. Electron Devices 37 (1658), 1990
451990
A highly stackable thin-film transistor (TFT) NAND-type flash memory
EK Lai, HT Lue, YH Hsiao, JY Hsieh, SC Lee, CP Lu, SY Wang, LW Yang, ...
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 46-47, 2006
372006
High-Performance 1-GaN n-MOSFET With MgO/MgO–Stacked Gate Dielectrics
KT Lee, CF Huang, J Gong, CT Lee
IEEE electron device letters 32 (3), 306-308, 2011
282011
Lateral double diffused metal oxide semiconductor (LDMOS) device with aligned buried layer isolation layer
SH Chen, CH Kao, J Gong, KH Huang, MC Wu, JR Yu
US Patent 6,734,493, 2004
27*2004
A 700-V device in high-voltage power ICs with low on-state resistance and enhanced SOA
FJ Yang, J Gong, RY Su, KH Huo, CL Tsai, CC Cheng, RH Liou, HC Tuan, ...
IEEE transactions on electron devices 60 (9), 2847-2853, 2013
262013
Multi-level operation of fully CMOS compatible WOx resistive random access memory (RRAM)
WC Chien, YC Chen, KP Chang, EK Lai, YD Yao, P Lin, J Gong, SC Tsai, ...
2009 IEEE International Memory Workshop, 1-2, 2009
262009
0.18 µm BCD technology platform with best-in-class 6 V to 70 V power MOSFETs
HL Chou, PC Su, JCW Ng, PL Wang, HT Lu, CJ Lee, WJ Syue, SY Yang, ...
2012 24th International Symposium on Power Semiconductor Devices and ICs …, 2012
252012
Demonstration of 3500-V 4H-SiC lateral MOSFETs
WS Lee, CW Lin, MH Yang, CF Huang, J Gong, Z Feng
IEEE electron device letters 32 (3), 360-362, 2011
252011
Electrical characteristics of Al2O3/TiO2/Al2O3 nanolaminate MOS capacitor on p-GaN with post metallization annealing and (NH4) 2SX treatments
KT Lee, CF Huang, J Gong, BH Liou
IEEE electron device letters 30 (9), 907-909, 2009
252009
A novel Ni/WOx/W resistive random access memory with excellent retention and low switching current
WC Chien, YC Chen, FM Lee, YY Lin, EK Lai, YD Yao, J Gong, SF Horng, ...
Japanese journal of applied physics 50 (4S), 04DD11, 2011
232011
Tungsten oxide resistive memory using rapid thermal oxidation of tungsten plugs
EK Lai, WC Chien, YC Chen, TJ Hong, YY Lin, KP Chang, YD Yao, P Lin, ...
Japanese Journal of Applied Physics 49 (4S), 04DD17, 2010
232010
Reliability and processing effects of bandgap-engineered SONOS (BE-SONOS) flash memory and study of the gate-stack scaling capability
SY Wang, HT Lue, PY Du, CW Liao, EK Lai, SC Lai, LW Yang, T Yang, ...
IEEE Transactions on Device and Materials Reliability 8 (2), 416-425, 2008
232008
Reliability and processing effects of bandgap engineered SONOS (BE-SONOS) flash memory
SY Wang, HT Lue, EK Lai, LW Yang, T Yang, KC Chen, J Gong, KY Hsieh, ...
2007 IEEE International Reliability Physics Symposium Proceedings. 45th …, 2007
232007
A novel micro-well array chip for liquid phase biomaterial processing and detection
HJH Chen, TF Chen, SRS Huang, J Gong, JC Li, WC Chen, TH Hseu, ...
Sensors and Actuators A: Physical 108 (1-3), 193-200, 2003
212003
Low-frequency noise properties of dynamic-threshold (DT) MOSFET's
TL Hsu, DDL Tang, J Gong
IEEE Electron Device Letters 20 (10), 532-534, 1999
201999
Optical and noise characteristics of amorphous Si/SiC superlattice reach-through avalanche photodiodes
JW Hong, WL Laih, YW Chen, YK Fang, CY Chang, J Gong
IEEE transactions on electron devices 37 (8), 1804-1809, 1990
191990
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