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Seung Chul Chae
Seung Chul Chae
Verified email at snu.ac.kr
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Cited by
Year
Random circuit breaker network model for unipolar resistance switching
SC Chae, JS Lee, S Kim, SB Lee, SH Chang, C Liu, B Kahng, H Shin, ...
Advanced Materials 20 (6), 1154-1159, 2008
3752008
Scale-free ferroelectricity induced by flat phonon bands in HfO2
HJ Lee, M Lee, K Lee, J Jo, H Yang, Y Kim, SC Chae, U Waghmare, ...
Science 369 (6509), 1343-1347, 2020
2832020
Occurrence of both unipolar memory and threshold resistance switching in a NiO film
SH Chang, JS Lee, SC Chae, SB Lee, C Liu, B Kahng, DW Kim, TW Noh
Physical review letters 102 (2), 026801, 2009
2802009
Direct observation of the proliferation of ferroelectric loop domains and vortex-antivortex pairs
SC Chae, N Lee, Y Horibe, M Tanimura, S Mori, B Gao, S Carr, ...
Physical review letters 108 (16), 167603, 2012
2112012
Effects of heat dissipation on unipolar resistance switching in Pt∕ NiO∕ Pt capacitors
SH Chang, SC Chae, SB Lee, C Liu, TW Noh, JS Lee, B Kahng, JH Jang, ...
Applied Physics Letters 92 (18), 2008
1882008
Magnetoelectric effects of nanoparticulate Pb (Zr0. 52Ti0. 48) O3–NiFe2O4 composite films
H Ryu, P Murugavel, JH Lee, SC Chae, TW Noh, YS Oh, HJ Kim, KH Kim, ...
Applied Physics Letters 89 (10), 2006
1772006
Flexoelectric Effect in the Reversal of Self‐Polarization and Associated Changes in the Electronic Functional Properties of BiFeO3 Thin Films
BC Jeon, D Lee, MH Lee, SM Yang, SC Chae, TK Song, SD Bu, ...
Advanced Materials 25 (39), 5643-5649, 2013
1542013
Selective control of multiple ferroelectric switching pathways using a trailing flexoelectric field
SM Park, B Wang, S Das, SC Chae, JS Chung, JG Yoon, LQ Chen, ...
Nature nanotechnology 13 (5), 366-370, 2018
1452018
Oxide double‐layer nanocrossbar for ultrahigh‐density bipolar resistive memory
SH Chang, SB Lee, DY Jeon, SJ Park, GT Kim, SM Yang, SC Chae, ...
Advanced materials 23 (35), 4063, 2011
1432011
Self-organization, condensation, and annihilation of topological vortices and antivortices in a multiferroic
SC Chae, Y Horibe, DY Jeong, S Rodan, N Lee, SW Cheong
Proceedings of the National Academy of Sciences 107 (50), 21366-21370, 2010
1192010
Scaling behaviors of reset voltages and currents in unipolar resistance switching
SB Lee, SC Chae, SH Chang, JS Lee, S Seo, B Kahng, TW Noh
Applied Physics Letters 93 (21), 2008
1172008
Ferroelectric switching dynamics of topological vortex domains in a hexagonal manganite
MG Han, Y Zhu, L Wu, T Aoki, V Volkov, X Wang, SC Chae, YS Oh, ...
arXiv preprint arXiv:1303.3593, 2013
1112013
Role of structural defects in the unipolar resistive switching characteristics of Pt∕ NiO∕ Pt structures
C Park, SH Jeon, SC Chae, S Han, BH Park, S Seo, DW Kim
Applied Physics Letters 93 (4), 2008
1112008
La-doped BaSnO3—Degenerate perovskite transparent conducting oxide: Evidence from synchrotron x-ray spectroscopy
S Sallis, DO Scanlon, SC Chae, NF Quackenbush, DA Fischer, JC Woicik, ...
Applied Physics Letters 103 (4), 2013
1032013
Ferroelectric Polarization-Switching Dynamics and Wake-Up Effect in Si-Doped HfO2
TY Lee, K Lee, HH Lim, MS Song, SM Yang, HK Yoo, DI Suh, Z Zhu, ...
ACS applied materials & interfaces 11 (3), 3142-3149, 2018
982018
Selective electrocatalysis imparted by metal–insulator transition for durability enhancement of automotive fuel cells
SM Jung, SW Yun, JH Kim, SH You, J Park, S Lee, SH Chang, SC Chae, ...
Nature Catalysis 3 (8), 639-648, 2020
852020
Epitaxial brownmillerite oxide thin films for reliable switching memory
SK Acharya, RV Nallagatla, O Togibasa, BW Lee, C Liu, CU Jung, ...
ACS Applied Materials & Interfaces 8 (12), 7902-7911, 2016
832016
Stable Subloop Behavior in Ferroelectric Si-Doped HfO2
K Lee, HJ Lee, TY Lee, HH Lim, MS Song, HK Yoo, DI Suh, JG Lee, Z Zhu, ...
ACS applied materials & interfaces 11 (42), 38929-38936, 2019
612019
Large 1/f noise of unipolar resistance switching and its percolating nature
SB Lee, S Park, JS Lee, SC Chae, SH Chang, MH Jung, Y Jo, B Kahng, ...
Applied Physics Letters 95 (12), 2009
592009
Evolution of the domain topology in a ferroelectric
SC Chae, Y Horibe, DY Jeong, N Lee, K Iida, M Tanimura, SW Cheong
Physical review letters 110 (16), 167601, 2013
542013
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