Nanoscale Transformations in Metastable, Amorphous, Silicon‐Rich Silica A Mehonic, M Buckwell, L Montesi, MS Munde, D Gao, S Hudziak, ... Advanced Materials 28 (34), 7486-7493, 2016 | 44 | 2016 |
Intrinsic resistance switching in amorphous silicon oxide for high performance SiOx ReRAM devices A Mehonic, MS Munde, WH Ng, M Buckwell, L Montesi, M Bosman, ... Microelectronic Engineering 178, 98-103, 2017 | 37 | 2017 |
Intrinsic resistance switching in amorphous silicon suboxides: the role of columnar microstructure MS Munde, A Mehonic, WH Ng, M Buckwell, L Montesi, M Bosman, ... Scientific reports 7 (1), 1-7, 2017 | 30 | 2017 |
Diffusion and aggregation of oxygen vacancies in amorphous silica MS Munde, DZ Gao, AL Shluger Journal of Physics: Condensed Matter 29 (24), 245701, 2017 | 25 | 2017 |
Microscopic and spectroscopic analysis of the nature of conductivity changes during resistive switching in silicon‐rich silicon oxide M Buckwell, L Montesi, A Mehonic, O Reza, L Garnett, M Munde, ... physica status solidi (c) 12 (1‐2), 211-217, 2015 | 20 | 2015 |
Silica: Nanoscale Transformations in Metastable, Amorphous, Silicon‐Rich Silica (Adv. Mater. 34/2016) A Mehonic, M Buckwell, L Montesi, MS Munde, D Gao, S Hudziak, ... Advanced Materials 28 (34), 7549-7549, 2016 | 10 | 2016 |
The interplay between structure and function in redox-based resistance switching AJ Kenyon, MS Munde, WH Ng, M Buckwell, D Joksas, A Mehonic Faraday discussions 213, 151-163, 2019 | 8 | 2019 |
Mechanisms of oxygen vacancy aggregation in SiO2 and HfO2 DZ Gao, J Strand, MS Munde, AL Shluger Frontiers in Physics 7, 43, 2019 | 6 | 2019 |
In situ transmission electron microscopy of resistive switching in thin silicon oxide layers M Duchamp, V Migunov, AH Tavabi, A Mehonic, M Buckwell, M Munde, ... Resolution and Discovery 1 (1), 27-33, 2016 | 6 | 2016 |
Visualization of Light Elements using 4D STEM: The Layered‐to‐Rock Salt Phase Transition in LiNiO2 Cathode Material S Ahmed, M Bianchini, A Pokle, MS Munde, P Hartmann, T Brezesinski, ... Advanced Energy Materials, 2001026, 2020 | 3 | 2020 |
Modeling of Diffusion and Incorporation of Interstitial Oxygen Ions at the TiN/SiO2 Interface J Cottom, A Bochkarev, E Olsson, K Patel, M Munde, J Spitaler, MN Popov, ... ACS applied materials & interfaces 11 (39), 36232-36243, 2019 | 2 | 2019 |
Effect of the interface morphology on the lateral electron transport in (001) GaP/Si heterostructures L Ostheim, PJ Klar, Y Moryson, M Rohnke, A Beyer, M Volk, M Munde, ... Journal of Applied Physics 126 (21), 215704, 2019 | | 2019 |
(Invited) Resistance Switching in Silicon-Rich Silica: Electronic, Structural and Photonic Perspectives AJ Kenyon, A Mehonic, M Munde, WH Ng, M Buckwell, L Montesi, ... 232nd ECS Meeting (October 1-5, 2017),, 2017 | | 2017 |
Oxygen Dynamics in Amorphous Silicon Suboxide Resistive Switches MS Munde UCL (University College London), 2017 | | 2017 |
Structural insights into resistance switching in silicon oxide: electronic and photonic perspectives AJ Kenyon, A Mehonic, M Buckwell, M Munde, WH Ng, L Montesi, ... Solid State Ionics 2017, 2017 | | 2017 |
Intrinsic Bulk Resistance Switching in Silicon Oxide AJ Kenyon, A Mehonic, M Buckwell, M Munde, WH Ng, L Montesi, ... Cine RRAM 2017, 2017 | | 2017 |
Impact of columnar microstructure on resistive switching behaviour of amorphous silicon suboxide films M Munde, A Mehonic, M Buckwell, L Montesi, M Bosman, AJ Kenyon E-MRS Spring meeting 2017, 2017 | | 2017 |
Influence of Interface Roughness on Resistance Switching in Undoped Amorphous Silicon Oxide A Mehonic, M Munde, WH Ng, M Buckwell, L Montesi, M Bosman, ... MEMRISYS 2017, 2017 | | 2017 |
Silicon Oxide Reram Device A Mehonic, M Buckwell, L Montesi, M Munde, RJ Chater, DS McPhail, ... PRiME 2016/230th ECS Meeting (October 2-7, 2016), 2016 | | 2016 |
Structural changes and conductive filament formation in silicon oxide during resistance switching AJ Kenyon, A Mehonic, L Montesi, M Buckwell, M Munde, D Gao, ... CIMTEC 2016, 2016 | | 2016 |