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Dolf Timmerman
Dolf Timmerman
Verified email at mat.eng.osaka-u.ac.jp
Title
Cited by
Cited by
Year
Red spectral shift and enhanced quantum efficiency in phonon-free photoluminescence from silicon nanocrystals
W De Boer, D Timmerman, K Dohnalova, IN Yassievich, H Zhang, ...
Nature nanotechnology 5 (12), 878-884, 2010
3692010
Space-separated quantum cutting with silicon nanocrystals for photovoltaic applications
D Timmerman, I Izeddin, P Stallinga, IN Yassievich, T Gregorkiewicz
Nature Photonics 2 (2), 105-109, 2008
2972008
Step-like enhancement of luminescence quantum yield of silicon nanocrystals
D Timmerman, J Valenta, K Dohnalová, W De Boer, T Gregorkiewicz
Nature nanotechnology 6 (11), 710-713, 2011
2362011
P. stallinga, IN Yassievich, and T. GregorNiewicz,“SpaceYseparated quantum cutting with silicon nanocrystals for photovoltaic applications,”
D Timmerman, I Izeddin
Nature Photonics 2, 105-109, 2008
1252008
Energy transfer in Er-doped sensitized with Si nanocrystals
I Izeddin, D Timmerman, T Gregorkiewicz, AS Moskalenko, AA Prokofiev, ...
Physical Review B 78 (3), 035327, 2008
892008
Direct bandgap optical transitions in Si nanocrystals
AA Prokofiev, AS Moskalenko, IN Yassievich, W De Boer, D Timmerman, ...
Jetp Letters 90, 758-762, 2010
812010
Eu-doped GaN and InGaN monolithically stacked full-color LEDs with a wide color gamut
S Ichikawa, K Shiomi, T Morikawa, D Timmerman, Y Sasaki, ...
Applied Physics Express 14 (3), 031008, 2021
522021
Saturation of luminescence from Si nanocrystals embedded in SiO2
D Timmerman, I Izeddin, T Gregorkiewicz
physica status solidi (a) 207 (1), 183-187, 2010
422010
Utilization of native oxygen in Eu (RE)-doped GaN for enabling device compatibility in optoelectronic applications
B Mitchell, D Timmerman, J Poplawsky, W Zhu, D Lee, R Wakamatsu, ...
Scientific reports 6 (1), 18808, 2016
392016
Self-trapped exciton state in Si nanocrystals revealed by induced absorption
WDAM de Boer, D Timmerman, T Gregorkiewicz, H Zhang, WJ Buma, ...
Physical Review B 85 (16), 161409, 2012
372012
Increased carrier generation rate in Si nanocrystals in SiO2 investigated by induced absorption
W De Boer, MT Trinh, D Timmerman, JM Schins, LDA Siebbeles, ...
Applied Physics Letters 99 (5), 2011
342011
M.; Gregorkiewicz, T. Step-like enhancement of luminescence quantum yield of silicon nanocrystals
D Timmerman, J Valenta, K Dohnalova, WDA De Boer
Nat. Nanotechnol 6 (11), 710-713, 2011
342011
Repairing nanoparticle surface defects
E Marino, TE Kodger, RW Crisp, D Timmerman, KE MacArthur, M Heggen, ...
Angewandte Chemie 129 (44), 13983-13987, 2017
322017
Enhanced photo/electroluminescence properties of Eu-doped GaN through optimization of the growth temperature and Eu related defect environment
W Zhu, B Mitchell, D Timmerman, A Uedono, A Koizumi, Y Fujiwara
APL Materials 4 (5), 2016
312016
Enhanced excitation efficiency of Eu ions in Eu-doped GaN/AlGaN multiple quantum well structures grown by organometallic vapor phase epitaxy
T Arai, D Timmerman, R Wakamatsu, D Lee, A Koizumi, Y Fujiwara
Journal of Luminescence 158, 70-74, 2015
282015
Carrier dynamics in Si nanocrystals in an SiO matrix investigated by transient light absorption
W De Boer, E De Jong, D Timmerman, T Gregorkiewicz, H Zhang, ...
Physical Review B 88 (15), 155304, 2013
262013
Nat. Photonics 2, 105 (2008)
D Timmerman, I Izeddin, P Stallinga, IN Yassievich, T Gregorkiewicz
262007
High-power Eu-doped GaN red LED based on a multilayer structure grown at lower temperatures by organometallic vapor phase epitaxy
W Zhu, B Mitchell, D Timmerman, A Koizumi, T Gregorkiewicz, Y Fujiwara
MRS Advances 2 (3), 159-164, 2017
232017
Size dependence of quantum efficiency of red emission from GaN: Eu structures for application in micro-LEDs
DD Van Der Gon, D Timmerman, Y Matsude, S Ichikawa, M Ashida, ...
Optics Letters 45 (14), 3973-3976, 2020
212020
Power-dependent spectral shift of photoluminescence from ensembles of silicon nanocrystals
D Timmerman, T Gregorkiewicz
Nanoscale research letters 7, 1-6, 2012
212012
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Articles 1–20