Suivre
Chun-I Lu
Chun-I Lu
Fabrication and Integration Division, Taiwan Semiconductor Research Institute
Adresse e-mail validée de narlabs.org.tw
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Année
Mapping polarization induced surface band bending on the Rashba semiconductor BiTeI
CJ Butler, HH Yang, JY Hong, SH Hsu, R Sankar, CI Lu, HY Lu, ...
Nature communications 5 (1), 4066, 2014
482014
Graphite edge controlled registration of monolayer MoS2 crystal orientation
CI Lu, CJ Butler, JK Huang, CR Hsing, HH Yang, YH Chu, CH Luo, ...
Applied Physics Letters 106 (18), 2015
462015
Digitized charge transfer magnitude determined by metal–organic coordination number
HH Yang, YH Chu, CI Lu, TH Yang, KJ Yang, CC Kaun, G Hoffmann, ...
ACS nano 7 (3), 2814-2819, 2013
402013
Spin-dependent molecule symmetry at a pentacene–co spinterface
YH Chu, CH Hsu, CI Lu, HH Yang, TH Yang, CH Luo, KJ Yang, SH Hsu, ...
ACS nano 9 (7), 7027-7032, 2015
292015
Selective Photoexcitation of Finite-Momentum Excitons in Monolayer MoS2 by Twisted Light
KB Simbulan, TD Huang, GH Peng, F Li, OJ Gomez Sanchez, JD Lin, ...
ACS nano 15 (2), 3481-3489, 2021
252021
Spin-Polarized Transport through Single Manganese Phthalocyanine Molecules on a Co Nanoisland
CH Hsu, YH Chu, CI Lu, PJ Hsu, SW Chen, WJ Hsueh, CC Kaun, MT Lin
The Journal of Physical Chemistry C 119 (6), 3374-3378, 2015
252015
Layered antiferromagnetic spin structures of expanded face-centered-tetragonal Mn (001) as an origin of exchange bias coupling to the magnetic Co layer
PJ Hsu, CI Lu, YH Chu, BY Wang, CB Wu, LJ Chen, SS Wong, MT Lin
Physical Review B—Condensed Matter and Materials Physics 85 (17), 174434, 2012
222012
Effects of the antiferromagnetic spin structure on antiferromagnetically induced perpendicular magnetic anisotropy
BY Wang, MS Tsai, CW Huang, CW Shih, CJ Chen, K Lin, JJ Li, NY Jih, ...
Physical Review B 96 (9), 094416, 2017
192017
Organic monolayer protected topological surface state
HH Yang, YH Chu, CI Lu, CJ Butler, R Sankar, FC Chou, MT Lin
Nano letters 15 (10), 6896-6900, 2015
142015
In situ magnetization switching of magnetic probes applied to spin-polarized scanning tunneling microscopy
PJ Hsu, CI Lu, SW Chen, WJ Hsueh, YH Chu, CH Hsu, CJ Butler, MT Lin
Applied Physics Letters 96 (14), 2010
132010
Twisted light-enhanced photovoltaic effect
KB Simbulan, YJ Feng, WH Chang, CI Lu, TH Lu, YW Lan
ACS nano 15 (9), 14822-14829, 2021
102021
Moiré-related in-gap states in a twisted MoS2/graphite heterojunction
CI Lu, CJ Butler, JK Huang, YH Chu, HH Yang, CM Wei, LJ Li, MT Lin
npj 2D Materials and Applications, 24, 2017
102017
Defect-engineered room temperature negative differential resistance in monolayer MoS 2 transistors
WH Chang, CI Lu, TH Yang, ST Yang, KB Simbulan, CP Lin, SH Hsieh, ...
Nanoscale Horizons 7 (12), 1533-1539, 2022
72022
Spontaneously induced magnetic anisotropy in an ultrathin Co/MoS 2 heterojunction
CI Lu, CH Huang, KHO Yang, KB Simbulan, KS Li, F Li, J Qi, M Jugovac, ...
Nanoscale horizons 5 (7), 1058-1064, 2020
72020
Quasiparticle scattering in the Rashba semiconductor BiTeBr: The roles of spin and defect lattice site
CJ Butler, PY Yang, R Sankar, YN Lien, CI Lu, LY Chang, CH Chen, ...
ACS nano 10 (10), 9361-9369, 2016
62016
Room temperature negative differential resistance in clay-graphite paper transistors
ST Yang, TH Yang, CI Lu, WH Chang, KB Simbulan, YW Lan
Carbon 176, 440-445, 2021
52021
Twisted light induced magnetic anisotropy changes in an interlayer exchange coupling system
CI Lu, SA Wang, KB Simbulan, CM Liu, X Wang, G Yu, WC Lin, TH Lu, ...
Nanoscale Horizons 6 (6), 462-467, 2021
22021
Promoting control of antiferromagnet-induced perpendicular magnetic anisotropy in magnetic multilayers: Effects of applying in-plane magnetic supporting layers
BY Wang, CW Huang, MS Tsai, K Lin, CC Chung, NY Jih, CI Lu, ...
Applied Physics Express 12 (4), 043004, 2019
22019
Hybridization regulated metal penetration at transition metal-organic semiconductor contacts
TH Chuang, KT Lu, CI Lu, YJ Hsu, DH Wei
Applied Physics Letters 112 (8), 2018
22018
Negative differential resistance induced by sulfur vacancies in monolayer MoS2 transistors
WH Chang, CI Lu, TH Yang, ST Yang, KB Simbulan, TH Lu, YW Lan
Low-Dimensional Materials and Devices 2023 12651, 4-7, 2023
2023
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