| A novel dry selective etch of SiGe for the enablement of high performance logic stacked gate-all-around nanosheet devices N Loubet, S Kal, C Alix, S Pancharatnam, H Zhou, C Durfee, M Belyansky, ... 2019 IEEE International Electron Devices Meeting (IEDM), 11.4. 1-11.4. 4, 2019 | 68 | 2019 |
| Semiconductor apparatus having stacked gates and method of manufacture thereof J Smith, AJ Devilliers, KN Tapily, S Kal, GJ Leusink US Patent 10,833,078, 2020 | 59 | 2020 |
| Electrocatalytic Proton Reduction by a Dicobalt Tetrakis-Schiff Base Macrocycle in Nonaqueous Electrolyte S Kal, AS Filatov, PH Dinolfo Inorganic chemistry 53 (14), 7137, 2014 | 58 | 2014 |
| Stress and resistivity analysis of electrodeposited gold films for MEMS application S Kal, A Bagolini, B Margesin, M Zen Microelectronics journal 37 (11), 1329-1334, 2006 | 44 | 2006 |
| Self-aligned quadruple patterning integration using spacer on spacer pitch splitting at the resist level for sub-32nm pitch applications A Raley, S Thibaut, N Mohanty, S Kal, S Nakamura, A Ko, D O'Meara, ... SPIE Advanced Lithography, 97820F-97820F-14, 2016 | 35 | 2016 |
| Method for incorporating multiple channel materials in a complimentary field effective transistor (CFET) device J Smith, S Kal US Patent 10,685,887, 2020 | 33 | 2020 |
| Selective deposition with surface treatment KH Yu, KN Tapily, T Hakamata, S Kal, GJ Leusink US Patent 10,378,105, 2019 | 29 | 2019 |
| Three-dimensional semiconductor device and method of fabrication J Smith, A Devilliers, N Mohanty, S Kal, K Tapily US Patent 9,997,598, 2018 | 29 | 2018 |
| High-pressure modifications of CaZn2, SrZn2, SrAl2, and BaAl2: Implications for Laves phase structural trends S Kal, E Stoyanov, JP Belieres, TL Groy, R Norrestam, U Häussermann Journal of Solid State Chemistry 181 (11), 3016-3023, 2008 | 26 | 2008 |
| Method for controlling transistor delay of nanowire or nanosheet transistor devices J Smith, S Kal, A Devilliers US Patent 10,714,391, 2020 | 23 | 2020 |
| Structural, Electrochemical, and Spectroscopic Investigation of Acetate Bridged Dinuclear Tetrakis-Schiff Base Macrocycles of Mn and Zn S Kal, AS Filatov, PH Dinolfo Inorganic chemistry 52 (24), 13963–13973, 2013 | 23 | 2013 |
| Evidence for Catalytic Water Oxidation by a Dimanganese Tetrakis-Schiff Base Macrocycle S Kal, L Ayensu-Mensah, PH Dinolfo Inorganica Chimica Acta 423, 201–206, 2014 | 22 | 2014 |
| Nondestructive characterization of nanoscale subsurface features fabricated by selective etching of multilayered nanowire test structures using Mueller matrix spectroscopic … M Korde, S Kal, C Alix, N Keller, GA Antonelli, A Mosden, AC Diebold Journal of Vacuum Science & Technology B 38 (2), 2020 | 16 | 2020 |
| EPE improvement thru self-alignment via multi-color material integration N Mohanty, JT Smith, L Huli, C Pereira, A Raley, S Kal, C Fonseca, X Sun, ... Optical Microlithography XXX 10147, 13-25, 2017 | 14 | 2017 |
| Method and system for selective spacer etch for multi-patterning schemes S Kal, AD Raley, N Mohanty, A Mosden US Patent 9,748,110, 2017 | 12 | 2017 |
| Strategies for aggressive scaling of EUV multi-patterning to sub-20 nm features A Dutta, J Church, J Lee, B O’Brien, L Meli, CC Liu, S Sharma, K Petrillo, ... Extreme Ultraviolet (EUV) Lithography XI 11323, 213-224, 2020 | 11 | 2020 |
| Isotropic silicon and silicon-germanium etching with tunable selectivity S Kal, KN Tapily, A Mosden US Patent 9,984,890, 2018 | 11 | 2018 |
| Reverse contact and silicide process for three-dimensional logic devices J Smith, H Niimi, J Grzeskowiak, D Chanemougame, L Liebmann, ... US Patent 11,264,274, 2022 | 10 | 2022 |
| Gas phase etch with controllable etch selectivity of Si-containing arc or silicon oxynitride to different films or masks S Kal, N Mohanty, AD Raley, A Mosden, SW LeFevre US Patent 10,971,372, 2021 | 9 | 2021 |
| Method for fabricating NFET and PFET nanowire devices A Mosden, C Pereira, S Kal US Patent 10,573,564, 2020 | 9 | 2020 |
K. TapilyTokyo Electron LimitedVerified email at us.tel.com
