juergen christen
juergen christen
Professor of Physics, Magdeburg University
Verified email at ovgu.de
TitleCited byYear
Bound exciton and donor–acceptor pair recombinations in ZnO
BK Meyer, H Alves, DM Hofmann, W Kriegseis, D Forster, F Bertram, ...
physica status solidi (b) 241 (2), 231-260, 2004
16482004
Ultranarrow luminescence lines from single quantum dots
M Grundmann, J Christen, NN Ledentsov, J Böhrer, D Bimberg, ...
Physical Review Letters 74 (20), 4043, 1995
8741995
Heterointerfaces in quantum wells and epitaxial growth processes: Evaluation by luminescence techniques
MA Herman, D Bimberg, J Christen
Journal of Applied Physics 70 (2), R1-R52, 1991
3541991
Line shapes of intersubband and excitonic recombination in quantum wells: Influence of final-state interaction, statistical broadening, and momentum conservation
J Christen, D Bimberg
Physical Review B 42 (11), 7213, 1990
2161990
Optical and structural analysis of ZnCdO layers grown by metalorganic vapor-phase epitaxy
T Gruber, C Kirchner, R Kling, F Reuss, A Waag, F Bertram, D Forster, ...
Applied physics letters 83 (16), 3290-3292, 2003
2092003
Cathodoluminescence atomic scale images of monolayer islands at GaAs/GaAlAs interfaces
D Bimberg, J Christen, T Fukunaga, H Nakashima, DE Mars, JN Miller
Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1987
1881987
InAs/GaAs quantum dots radiative recombination from zero‐dimensional states
M Grundmann, NN Ledentsov, R Heitz, L Eckey, J Christen, J Böhrer, ...
physica status solidi (b) 188 (1), 249-258, 1995
1821995
Scanning cathodoluminescence microscopy: A unique approach to atomic‐scale characterization of heterointerfaces and imaging of semiconductor inhomogeneities
J Christen, M Grundmann, D Bimberg
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1991
1811991
MOVPE growth of GaN on Si (1 1 1) substrates
A Dadgar, M Poschenrieder, J Bläsing, O Contreras, F Bertram, ...
Journal of Crystal Growth 248, 556-562, 2003
1802003
Strain relaxation and strong impurity incorporation in epitaxial laterally overgrown GaN: Direct imaging of different growth domains by cathodoluminescence microscopy and micro …
F Bertram, T Riemann, J Christen, A Kaschner, A Hoffmann, C Thomsen, ...
Applied physics letters 74 (3), 359-361, 1999
1531999
Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick layers
A Bell, S Srinivasan, C Plumlee, H Omiya, FA Ponce, J Christen, ...
Journal of applied physics 95 (9), 4670-4674, 2004
1482004
Proceedings of the 18th International Conference on the Physics of Semiconductors, Stockholm, 1986
GEW Bauer, D Bimberg, J Christen, D Oertel, D Mars, JN Miller, ...
World Scientific, Singapore, 1987
1441987
Optical investigations of AlGaN on GaN epitaxial films
G Steude, T Christmann, BK Meyer, A Goeldner, A Hoffmann, F Bertram, ...
MRS Online Proceedings Library Archive 537, 1998
1431998
Carrier capture and quantum confinement in GaAs/AlGaAs quantum wire lasers grown on V‐grooved substrates
M Walther, E Kapon, J Christen, DM Hwang, R Bhat
Applied physics letters 60 (5), 521-523, 1992
1391992
Growth of blue GaN LED structures on 150-mm Si (1 1 1)
A Dadgar, C Hums, A Diez, J Bläsing, A Krost
Journal of Crystal Growth 297 (2), 279-282, 2006
1382006
Bright blue electroluminescence from an InGaN/GaN multiquantum-well diode on Si (111): Impact of an AlGaN/GaN multilayer
A Dadgar, J Christen, T Riemann, S Richter, J Bläsing, A Diez, A Krost, ...
Applied Physics Letters 78 (15), 2211-2213, 2001
1322001
Self-organization processes in MBE-grown quantum dot structures
D Bimberg, M Grundmann, NN Ledentsov, SS Ruvimov, P Werner, ...
Thin Solid Films 267 (1-2), 32-36, 1995
1301995
Epitaxy of GaN on silicon—impact of symmetry and surface reconstruction
A Dadgar, F Schulze, M Wienecke, A Gadanecz, J Bläsing, P Veit, ...
New Journal of Physics 9 (10), 389, 2007
1292007
Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range
C Hums, J Bläsing, A Dadgar, A Diez, T Hempel, J Christen, A Krost, ...
Applied Physics Letters 90 (2), 022105, 2007
1282007
Localization induced electron‐hole transition rate enhancement in GaAs quantum wells
J Christen, D Bimberg, A Steckenborn, G Weimann
Applied Physics Letters 44 (1), 84-86, 1984
1271984
The system can't perform the operation now. Try again later.
Articles 1–20