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Genquan Han
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Electronic band structure and effective mass parameters of Ge1-xSnx alloys
K Lu Low, Y Yang, G Han, W Fan, YC Yeo
Journal of Applied Physics 112 (10), 2012
2922012
Ferroelectric HfZrOx Ge and GeSn PMOSFETs with Sub-60 mV/decade subthreshold swing, negligible hysteresis, and improved Ids
J Zhou, G Han, Q Li, Y Peng, X Lu, C Zhang, J Zhang, QQ Sun, DW Zhang, ...
2016 IEEE International Electron Devices Meeting (IEDM), 12.2. 1-12.2. 4, 2016
1732016
Tunneling field-effect transistor: Effect of strain and temperature on tunneling current
PF Guo, LT Yang, Y Yang, L Fan, GQ Han, GS Samudra, YC Yeo
IEEE Electron Device Letters 30 (9), 981-983, 2009
1182009
Comparison study of β-Ga2O3 photodetectors grown on sapphire at different oxygen pressures
L Huang, Q Feng, G Han, F Li, X Li, L Fang, X Xing, J Zhang, Y Hao
IEEE Photonics Journal 9 (4), 1-8, 2017
1152017
Negative differential resistance in negative capacitance FETs
J Zhou, G Han, J Li, Y Liu, Y Peng, J Zhang, QQ Sun, DW Zhang, Y Hao
IEEE Electron Device Letters 39 (4), 622-625, 2018
1102018
High-mobility germanium-tin (GeSn) p-channel MOSFETs featuring metallic source/drain and sub-370 C process modules
G Han, S Su, C Zhan, Q Zhou, Y Yang, L Wang, P Guo, W Wei, CP Wong, ...
2011 International Electron Devices Meeting, 16.7. 1-16.7. 3, 2011
1052011
Germanium–Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 Passivation
X Gong, G Han, F Bai, S Su, P Guo, Y Yang, R Cheng, D Zhang, G Zhang, ...
IEEE Electron Device Letters 34 (3), 339-341, 2013
1032013
(AlGa)2O3 solar-blind photodetectors on sapphire with wider bandgap and improved responsivity
Q Feng, X Li, G Han, L Huang, F Li, W Tang, J Zhang, Y Hao
Optical Materials Express 7 (4), 1240-1248, 2017
972017
Relaxed and strained patterned germanium-tin structures: a Raman scattering study
R Cheng, W Wang, X Gong, L Sun, P Guo, H Hu, Z Shen, G Han, YC Yeo
ECS Journal of Solid State Science and Technology 2 (4), P138, 2013
922013
High-Q resonances governed by the quasi-bound states in the continuum in all-dielectric metasurfaces
C Fang, Q Yang, Q Yuan, X Gan, J Zhao, Y Shao, Y Liu, G Han, Y Hao
Opto-Electronic Advances 4 (6), 200030-1-200030-10, 2021
842021
Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrate
G Han, P Guo, Y Yang, C Zhan, Q Zhou, YC Yeo
Applied Physics Letters 98 (15), 2011
822011
Computing primitive of fully VCSEL-based all-optical spiking neural network for supervised learning and pattern classification
S Xiang, Z Ren, Z Song, Y Zhang, X Guo, G Han, Y Hao
IEEE transactions on neural networks and learning systems 32 (6), 2494-2505, 2020
812020
Ferroelectric negative capacitance GeSn PFETs with sub-20 mV/decade subthreshold swing
J Zhou, G Han, Y Peng, Y Liu, J Zhang, QQ Sun, DW Zhang, Y Hao
IEEE Electron Device Letters 38 (8), 1157-1160, 2017
802017
A van der Waals Synaptic Transistor Based on Ferroelectric Hf0.5Zr0.5O2 and 2D Tungsten Disulfide
L Chen, L Wang, Y Peng, X Feng, S Sarkar, S Li, B Li, L Liu, K Han, ...
Advanced Electronic Materials 6 (6), 2000057, 2020
782020
Recent progress of integrated circuits and optoelectronic chips
Y Hao, S Xiang, G Han, J Zhang, X Ma, Z Zhu, X Guo, Y Zhang, Y Han, ...
Science China Information Sciences 64 (10), 201401, 2021
752021
Comparison Study of-Ga2O3Photodetectors on Bulk Substrate and Sapphire
Q Feng, L Huang, G Han, F Li, X Li, L Fang, X Xing, J Zhang, W Mu, Z Jia, ...
IEEE Transactions on Electron Devices 63 (9), 3578-3583, 2016
722016
First Demonstration of Waferscale Heterogeneous Integration of Ga2O3 MOSFETs on SiC and Si Substrates by Ion-Cutting Process
W Xu, Y Wang, T You, X Ou, G Han, H Hu, S Zhang, F Mu, T Suga, ...
2019 IEEE International Electron Devices Meeting (IEDM), 12.5. 1-12.5. 4, 2019
692019
Towards direct band-to-band tunneling in p-channel tunneling field effect transistor (TFET): Technology enablement by germanium-tin (GeSn)
Y Yang, S Su, P Guo, W Wang, X Gong, L Wang, KL Low, G Zhang, C Xue, ...
2012 International Electron Devices Meeting, 16.3. 1-16.3. 4, 2012
692012
GeSn quantum well p-channel tunneling FETs fabricated on Si (001) and (111) with improved subthreshold swing
G Han, Y Wang, Y Liu, C Zhang, Q Feng, M Liu, S Zhao, B Cheng, ...
IEEE Electron Device Letters 37 (6), 701-704, 2016
672016
Germanium–tin p-channel tunneling field-effect transistor: Device design and technology demonstration
Y Yang, G Han, P Guo, W Wang, X Gong, L Wang, KL Low, YC Yeo
IEEE Transactions on Electron Devices 60 (12), 4048-4056, 2013
662013
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