| Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlGaAs and InGaAs/GaAs quantum dots JD Plumhof, V Křápek, F Ding, KD Jöns, R Hafenbrak, P Klenovský, ... Physical Review B 83 (12), 121302, 2011 | 108 | 2011 |
| Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties P Klenovský, V Křápek, D Munzar, J Humlíček Applied Physics Letters 97 (20), 2010 | 54 | 2010 |
| Excitonic structure and pumping power dependent emission blue-shift of type-II quantum dots P Klenovský, P Steindl, D Geffroy Scientific Reports 7 (1), 45568, 2017 | 49 | 2017 |
| Resolving the temporal evolution of line broadening in single quantum emitters C Schimpf, M Reindl, P Klenovský, T Fromherz, SFC Da Silva, J Hofer, ... Optics express 27 (24), 35290-35307, 2019 | 39 | 2019 |
| Single-particle-picture breakdown in laterally weakly confining GaAs quantum dots D Huber, BU Lehner, D Csontosová, M Reindl, S Schuler, SFC Da Silva, ... Physical Review B 100 (23), 235425, 2019 | 35 | 2019 |
| Electronic states of (InGa)(AsSb)/GaAs/GaP quantum dots P Klenovský, A Schliwa, D Bimberg Physical Review B 100 (11), 115424, 2019 | 33 | 2019 |
| Inversion of the exciton built-in dipole moment in In (Ga) As quantum dots via nonlinear piezoelectric effect J Aberl, P Klenovský, JS Wildmann, J Martín-Sánchez, T Fromherz, ... Physical Review B 96 (4), 045414, 2017 | 31 | 2017 |
| Excitonic fine structure splitting in type-II quantum dots V Křápek, P Klenovský, T Šikola Physical Review B 92 (19), 195430, 2015 | 30 | 2015 |
| Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix P Steindl, EM Sala, B Alén, DF Marrón, D Bimberg, P Klenovský Physical Review B 100 (19), 195407, 2019 | 28 | 2019 |
| Effect of second-order piezoelectricity on the excitonic structure of stress-tuned In (Ga) As/GaAs quantum dots P Klenovský, P Steindl, J Aberl, E Zallo, R Trotta, A Rastelli, T Fromherz Physical Review B 97 (24), 245314, 2018 | 28 | 2018 |
| Modeling electronic and optical properties of III–V quantum dots—selected recent developments A Mittelstädt, A Schliwa, P Klenovský Light: Science & Applications 11 (1), 17, 2022 | 26 | 2022 |
| Theory of magneto-optical properties of neutral and charged excitons in GaAs/AlGaAs quantum dots D Csontosová, P Klenovský Physical Review B 102 (12), 125412, 2020 | 26 | 2020 |
| Optical orientation and alignment of excitons in direct and indirect band gap (In, Al) As/AlAs quantum dots with type-I band alignment J Rautert, TS Shamirzaev, SV Nekrasov, DR Yakovlev, P Klenovský, ... Physical Review B 99 (19), 195411, 2019 | 25 | 2019 |
| Polarization anisotropy of the emission from type-II quantum dots P Klenovský, D Hemzal, P Steindl, M Zíkova, V Křápek, J Humlíček Physical Review B 92 (24), 241302, 2015 | 23 | 2015 |
| Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition P Klenovský, M Brehm, V Křápek, E Lausecker, D Munzar, F Hackl, ... Physical Review B 86 (11), 115305, 2012 | 22 | 2012 |
| Quantum entanglement in lateral GaAs/AlGaAs quantum dot molecules V Křápek, P Klenovský, A Rastelli, OG Schmidt, D Munzar Journal of Physics: Conference Series 245 (1), 012027, 2010 | 20 | 2010 |
| Modelling of electronic states in InAs/GaAs quantum dots with GaAsSb strain reducing overlayer P Klenovský, V Křápek, D Munzar, J Humlíček Journal of Physics: Conference Series 245 (1), 012086, 2010 | 19 | 2010 |
| Electric field induced tuning of electronic correlation in weakly confining quantum dots H Huang, D Csontosová, S Manna, Y Huo, R Trotta, A Rastelli, ... Physical Review B 104 (16), 165401, 2021 | 18 | 2021 |
| Structural and compositional analysis of (InGa)(AsSb)/GaAs/GaP Stranski–Krastanov quantum dots RSR Gajjela, AL Hendriks, JO Douglas, EM Sala, P Steindl, P Klenovský, ... Light: Science & Applications 10 (1), 125, 2021 | 17 | 2021 |
| Type-II InAs/GaAsSb/GaAs quantum dots as artificial quantum dot molecules P Klenovsky, V Krápek, J Humlícek arXiv preprint arXiv:1612.03596, 2016 | 14 | 2016 |
Armando RastelliProfessor of Semiconductor Physics, Johannes Kepler University LinzVerified email at jku.at
