Hemant Martand Dixit

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Valentino R. CooperMaterial Science and Technology Division, Oak Ridge National LaboratoryAdresse e-mail validée de ornl.gov
Dirk LamoenEMAT, Universiteit AntwerpenAdresse e-mail validée de uantwerpen.be
Michael A McGuireOak Ridge National LaboratoryAdresse e-mail validée de ornl.gov
Brian SalesGroup Leader, Correlated Electron Materials Group- ORNL and Adjunct Professor, Material PhysicsAdresse e-mail validée de ornl.gov
Nandan TandonResearch Associate at Michigan State UniversityAdresse e-mail validée de msu.edu
Jagjit NandaSLAC National Lab and Stanford UniversityAdresse e-mail validée de slac.stanford.edu
Michel CoteUniversite de MontrealAdresse e-mail validée de umontreal.ca
Mozhgan N. AminiPostdoctoral researcher, University of Antwerp, BelgiumAdresse e-mail validée de uantwerpen.be
Juan Carlos IdroboUniversity of WashingtonAdresse e-mail validée de uw.edu
Gabriel AntoniusUniversité du Québec à Trois-Rivières (UQTR)Adresse e-mail validée de uqtr.ca
K. S. NarayanJawaharlal Nehru Centre for Advanced Scientific ResearchAdresse e-mail validée de jncasr.ac.in
Ashutosh SharmaChemical Engineering, IITK, IIT Kanpur, Indian Institute of Technology KanpurAdresse e-mail validée de iitk.ac.in
Partho Sarathi Gooh PattaderAssociate Professor, IITGAdresse e-mail validée de iitg.ac.in
Wu Zhou 周武Professor, University of Chinese Academy of SciencesAdresse e-mail validée de ucas.ac.cn
Di XiaoUniversity of WashingtonAdresse e-mail validée de uw.edu
Jun Hee LeeSchool of Energy and Chemical Engineering, UNIST, KoreaAdresse e-mail validée de unist.ac.kr
Christian SchlepützSwiss Light Source, Paul Scherrer InstitutAdresse e-mail validée de psi.ch
Wolter SiemonsASMLAdresse e-mail validée de asml.com
Artur GlavicPaul Scherrer InstitutAdresse e-mail validée de psi.ch
Ganesh BaglerIIIT DelhiAdresse e-mail validée de iiitd.ac.in

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Hemant Martand Dixit

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Physics Computational Materials Science Density Functional Theory Oxides


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Coupling of crystal structure and magnetism in the layered, ferromagnetic insulator CrI3 MA McGuire, H Dixit, VR Cooper, BC Sales Chemistry of Materials, 2014	986	2014
Electronic structure of transparent oxides with the Tran–Blaha modified Becke–Johnson potential H Dixit, R Saniz, S Cottenier, D Lamoen, B Partoens Journal of Physics: Condensed Matter 24 (20), 205503, 2012	149	2012
Electronic structure and band gap of zinc spinel oxides beyond LDA: ZnAl2O4, ZnGa2O4 and ZnIn2O4 H Dixit, N Tandon, S Cottenier, R Saniz, D Lamoen, B Partoens, ... New Journal of Physics 13 (6), 063002, 2011	147	2011
band gap of ZnO: Effects of plasmon-pole models M Stankovski, G Antonius, D Waroquiers, A Miglio, H Dixit, K Sankaran, ... Physical Review B—Condensed Matter and Materials Physics 84 (24), 241201, 2011	133	2011
Electric field induced patterns in soft visco-elastic films: From long waves of viscous liquids to short waves of elastic solids N Arun, A Sharma, PSG Pattader, I Banerjee, HM Dixit, KS Narayan Arxiv preprint arXiv:0906.0479, 2009	89	2009
The quasiparticle band structure of zincblende and rocksalt ZnO H Dixit, R Saniz, D Lamoen, B Partoens Journal of physics: condensed matter 22 (12), 125505, 2010	87	2010
Facet-dependent disorder in pristine high-voltage lithium–manganese-rich cathode material H Dixit, W Zhou, JC Idrobo, J Nanda, VR Cooper Acs Nano 8 (12), 12710-12716, 2014	86	2014
The origin of p-type conductivity in ZnM 2 O 4 (M= Co, Rh, Ir) spinels MN Amini, H Dixit, R Saniz, D Lamoen, B Partoens Physical Chemistry Chemical Physics 16 (6), 2588-2596, 2014	75	2014
Manufacturable 22nm FD-SOI embedded MRAM technology for industrial-grade MCU and IOT applications VB Naik, K Lee, K Yamane, R Chao, J Kwon, N Thiyagarajah, NL Chung, ... 2019 IEEE International Electron Devices Meeting (IEDM), 2.3. 1-2.3. 4, 2019	74	2019
First-principles study of possible shallow donors in ZnAlO spinel H Dixit, N Tandon, S Cottenier, R Saniz, D Lamoen, B Partoens Physical Review B—Condensed Matter and Materials Physics 87 (17), 174101, 2013	63	2013
A simplified approach to the band gap correction of defect formation energies: Al, Ga, and In-doped ZnO R Saniz, Y Xu, M Matsubara, MN Amini, H Dixit, D Lamoen, B Partoens Journal of Physics and Chemistry of Solids 74 (1), 45-50, 2013	49	2013
JEDEC-qualified highly reliable 22nm FD-SOI embedded MRAM for low-power industrial-grade, and extended performance towards automotive-grade-1 applications VB Naik, K Yamane, TY Lee, J Kwon, R Chao, JH Lim, NL Chung, ... 2020 IEEE International Electron Devices Meeting (IEDM), 11.3. 1-11.3. 4, 2020	45	2020
Correlating Local Structure with Electrochemical Activity in Li₂MnO₃ RE Ruther, H Dixit, AM Pezeshki, RL Sacci, VR Cooper, J Nanda, ... The Journal of Physical Chemistry C 119 (32), 18022-18029, 2015	43	2015
Impact of process variability on write error rate and read disturbance in STT-MRAM devices J Song, H Dixit, B Behin-Aein, CH Kim, W Taylor IEEE Transactions on Magnetics 56 (12), 1-11, 2020	38	2020
Defect and grain boundary scattering in tungsten: A combined theoretical and experimental study NA Lanzillo, H Dixit, E Milosevic, C Niu, AV Carr, P Oldiges, MV Raymond, ... Journal of Applied Physics 123 (15), 2018	36	2018
Thickness-dependent carrier density at the surface of SrTiO3 (111) slabs N Sivadas, H Dixit, VR Cooper, D Xiao Phys. Rev. B 89 (7), 075303, 2014	32	2014
Quasiparticle energies and uniaxial pressure effects on the properties of SnO2 R Saniz, H Dixit, D Lamoen, B Partoens Applied Physics Letters 97 (26), 2010	27	2010
Stabilization of weak ferromagnetism by strong magnetic response to epitaxial strain in multiferroic BiFeO₃ H Dixit, J Hee Lee, JT Krogel, S Okamoto, VR Cooper Scientific reports 5 (1), 12969, 2015	24	2015
Accurate pseudopotential description of the GW bandstructure of ZnO H Dixit, R Saniz, D Lamoen, B Partoens Computer Physics Communications 182 (9), 2029-2031, 2011	21	2011
Understanding Strain‐Induced Phase Transformations in BiFeO₃ Thin Films H Dixit, C Beekman, CM Schlepütz, W Siemons, Y Yang, N Senabulya, ... Advanced Science 2 (8), 1500041, 2015	19	2015

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