Luca Vandelli
TitleCited byYear
Metal oxide resistive memory switching mechanism based on conductive filament properties
G Bersuker, DC Gilmer, D Veksler, P Kirsch, L Vandelli, A Padovani, ...
Journal of Applied Physics 110 (12), 124518, 2011
3172011
A Physical Model of the Temperature Dependence of the Current ThroughStacks
L Vandelli, A Padovani, L Larcher, RG Southwick, WB Knowlton, ...
IEEE Transactions on Electron Devices 58 (9), 2878-2887, 2011
1762011
Metal oxide RRAM switching mechanism based on conductive filament microscopic properties
G Bersuker, DC Gilmer, D Veksler, J Yum, H Park, S Lian, L Vandelli, ...
2010 International Electron Devices Meeting, 19.6. 1-19.6. 4, 2010
1082010
Experimental and theoretical study of electrode effects in HfO2based RRAM
C Cagli, J Buckley, V Jousseaume, T Cabout, A Salaun, H Grampeix, ...
2011 International Electron Devices Meeting, 28.7. 1-28.7. 4, 2011
782011
Grain boundary-driven leakage path formation in HfO2 dielectrics
G Bersuker, J Yum, L Vandelli, A Padovani, L Larcher, V Iglesias, M Porti, ...
Solid-State Electronics 65, 146-150, 2011
662011
A compact model of program window in HfO x RRAM devices for conductive filament characteristics analysis
L Larcher, FM Puglisi, P Pavan, A Padovani, L Vandelli, G Bersuker
IEEE Transactions on Electron Devices 61 (8), 2668-2673, 2014
642014
Microscopic Modeling of HfOx RRAM Operations: From Forming to Switching
A Padovani, L Larcher, O Pirrotta, L Vandelli, G Bersuker
IEEE Transactions on electron devices 62 (6), 1998-2006, 2015
632015
Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices
L Vandelli, A Padovani, L Larcher, G Broglia, G Ori, M Montorsi, ...
2011 International Electron Devices Meeting, 17.5. 1-17.5. 4, 2011
612011
Microscopic modeling of electrical stress-induced breakdown in poly-crystalline hafnium oxide dielectrics
L Vandelli, A Padovani, L Larcher, G Bersuker
IEEE Transactions on Electron Devices 60 (5), 1754-1762, 2013
502013
Random telegraph noise (RTN) in scaled RRAM devices
D Veksler, G Bersuker, L Vandelli, A Padovani, L Larcher, A Muraviev, ...
2013 IEEE International Reliability Physics Symposium (IRPS), MY. 10.1-MY. 10.4, 2013
412013
Microscopic understanding and modeling of HfO2 RRAM device physics
L Larcher, A Padovani, O Pirrotta, L Vandelli, G Bersuker
2012 International Electron Devices Meeting, 20.1. 1-20.1. 4, 2012
372012
SOLIDSTATE ELECTRON
G Bersuker, J Yum, L Vandelli, A Padovani, L Larcher, V Iglesias, M Porti, ...
Solid-State Electron., 65, 146, 2011
312011
A microscopic physical description of RTN current fluctuations in HfOx RRAM
FM Puglisi, P Pavan, L Vandelli, A Padovani, M Bertocchi, L Larcher
2015 IEEE International Reliability Physics Symposium, 5B. 5.1-5B. 5.6, 2015
272015
Modeling the effects of different forming conditions on RRAM conductive filament stability
B Butcher, G Bersuker, L Vandelli, A Padovani, L Larcher, A Kalantarian, ...
2013 5th IEEE International Memory Workshop, 52-55, 2013
232013
Modeling of the forming operation in HfO2-based resistive switching memories
L Vandelli, A Padovani, G Bersuker, D Gilmer, P Pavan, L Larcher
2011 3rd IEEE International Memory Workshop (IMW), 1-4, 2011
222011
A comprehensive understanding of the erase of TANOS memories through charge separation experiments and simulations
A Padovani, A Arreghini, L Vandelli, L Larcher, P Pavan, J Van Houdt
IEEE Transactions on Electron Devices 58 (9), 3147-3155, 2011
202011
A Charge-Trapping Model for the Fast Component of Positive Bias Temperature Instability (PBTI) in High- Gate-Stacks
L Vandelli, L Larcher, D Veksler, A Padovani, G Bersuker, K Matthews
IEEE Transactions on Electron Devices 61 (7), 2287-2293, 2014
182014
A physics-based model of the dielectric breakdown in HfO2 for statistical reliability prediction
L Vandelli, A Padovani, L Larcher, G Bersuker, J Yum, P Pavan
2011 International Reliability Physics Symposium, GD. 5.1-GD. 5.4, 2011
182011
Connecting the physical and electrical properties of Hafnia-based RRAM
B Butcher, G Bersuker, DC Gilmer, L Larcher, A Padovani, L Vandelli, ...
2013 IEEE International Electron Devices Meeting, 22.2. 1-22.2. 4, 2013
172013
A New Physical Method Based on Simulations for the Characterization of the Interfacial and Bulk Defect Density in High- /III-V MOSFETs
G Sereni, L Vandelli, D Veksler, L Larcher
IEEE Transactions on Electron Devices 62 (3), 705-712, 2015
162015
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Articles 1–20