| Stability analysis in graphene nanoribbon interconnects SH Nasiri, MK Moravvej-Farshi, R Faez IEEE Electron Device Letters 31 (12), 1458-1460, 2010 | 103 | 2010 |
| Improving the electrical characteristics of nanoscale triple-gate junctionless FinFET using gate oxide engineering NB Bousari, MK Anvarifard, S Haji-Nasiri AEU-International Journal of Electronics and Communications 108, 226-234, 2019 | 74 | 2019 |
| Compact formulae for number of conduction channels in various types of graphene nanoribbons at various temperatures SH Nasiri, R Faez, MK Moravvej-Farshi Modern Physics Letters B 26 (01), 1150004, 2012 | 47 | 2012 |
| A novel graphene nanoribbon field effect transistor with two different gate insulators MA Eshkalak, R Faez, S Haji-Nasiri Physica E: Low-dimensional Systems and Nanostructures 66, 133-139, 2015 | 42 | 2015 |
| Stability analysis in multiwall carbon nanotube bundle interconnects S Haji-Nasiri, R Faez, MK Moravvej-Farshi Microelectronics Reliability 52 (12), 3026-3034, 2012 | 24 | 2012 |
| Time domain analysis of graphene nanoribbon interconnects based on transmission line model NS HAJI, FMK MORAVVEJ, R Faez Iranian Journal of Electrical and Electronic Engineering 8 (1), 37-44, 2012 | 24 | 2012 |
| Benefitting from high-κ spacer engineering in balistic triple-gate junctionless FinFET-a full quantum study NB Bousari, MK Anvarifard, S Haji-Nasiri Silicon 12, 2221-2228, 2020 | 19 | 2020 |
| Spin-dependent electronic transport properties of transition metal atoms doped α-armchair graphyne nanoribbons S Fotoohi, S Haji-Nasiri Physica E: Low-dimensional Systems and Nanostructures 98, 159-167, 2018 | 16 | 2018 |
| Crosstalk bandwidth and stability analysis in graphene nanoribbon interconnects A Bagheri, M Ranjbar, S Haji-Nasiri, S Mirzakuchaki Microelectronics Reliability 55 (8), 1262-1268, 2015 | 15 | 2015 |
| Doping induced diode behavior with large rectifying ratio in graphyne nanoribbons device S Haji-Nasiri, S Fotoohi Physics Letters A 382 (39), 2894-2899, 2018 | 13 | 2018 |
| The electronic transport properties of defected bilayer sliding armchair graphene nanoribbons A Mohammadi, S Haji-Nasiri Physics Letters A 382 (15), 1040-1046, 2018 | 13 | 2018 |
| Modelling and analysis of crosstalk induced noise effects in bundle SWCNT interconnects and its impact on signal stability A Bagheri, M Ranjbar, S Haji-Nasiri, S Mirzakuchaki Journal of Computational Electronics 16, 845-855, 2017 | 13 | 2017 |
| A novel graphene nanoribbon field effect transistor with two different gate insulators, Phys. E Low dimens MA Eshkalak, R Faez, S Haji-Nasiri Syst. Nanostruct 66, 2015 | 7 | 2015 |
| Stability analysis in CNTFETs S Haji-Nasiri, MK Moravvej-Farshi IEEE electron device letters 34 (2), 301-303, 2013 | 7 | 2013 |
| Vacancy Defects Induced Magnetism in Armchair Graphdiyne Nanoribbon S Fotoohi, S Haji Nasiri Journal of Optoelectronical Nanostructures 4 (4), 15-38, 2019 | 6 | 2019 |
| Electronic and transport characteristics of vacancy and nitrogen-doped graphene nanoribbon rotational switch M Poliki, S Haji-Nasiri Applied Physics A 125 (9), 658, 2019 | 6 | 2019 |
| γ-Graphyne rectifier and NDR tunable by doping, line edge roughness and twist M Golzani, M Poliki, S Haji-Nasiri Computational Materials Science 190, 110303, 2021 | 5 | 2021 |
| DC characteristic analysis of single-electron transistor based on MIB model K Feizi, SH Nasiri 2010 International Conference on Nanotechnology and Biosensors IPCBEE 2, 2010 | 5 | 2010 |
| The effect of line edge roughness defect on the electronic transport properties of Boron-doped graphene nanoribbon rectifier M Golzani, M Poliki, S Haji-Nasiri Applied Physics A 126, 1-10, 2020 | 4 | 2020 |
| The effect of line-edge roughness on electronic transport characteristics of a graphene nanoribbon rectifier M Golzani, S Haji-Nasiri Journal of Electronic Materials 47 (10), 6067-6077, 2018 | 4 | 2018 |
rahim faezsharif university of technologyVerified email at sharif.edu
