| Band anticrossing in GaInNAs alloys W Shan, W Walukiewicz, JW Ager III, EE Haller, JF Geisz, DJ Friedman, ... Physical Review Letters 82 (6), 1221, 1999 | 1886 | 1999 |
| 40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions JF Geisz, DJ Friedman, JS Ward, A Duda, WJ Olavarria, TE Moriarty, ... Applied Physics Letters 93 (12), 123505, 2008 | 568 | 2008 |
| 1-eV solar cells with GaInNAs active layer DJ Friedman, JF Geisz, SR Kurtz, JM Olson Journal of Crystal Growth 195 (1-4), 409-415, 1998 | 456 | 1998 |
| High-efficiency triple-junction solar cells grown inverted with a metamorphic bottom junction JF Geisz, S Kurtz, MW Wanlass, JS Ward, A Duda, DJ Friedman, ... Applied Physics Letters 91 (2), 023502, 2007 | 444 | 2007 |
| Nitrogen-Activated Transitions, Level Repulsion, and Band Gap Reduction in with JD Perkins, A Mascarenhas, Y Zhang, JF Geisz, DJ Friedman, JM Olson, ... Physical review letters 82 (16), 3312, 1999 | 408 | 1999 |
| Nitrogen-Activated Transitions, Level Repulsion, and Band Gap Reduction in with JD Perkins, A Mascarenhas, Y Zhang, JF Geisz, DJ Friedman, JM Olson, ... Physical review letters 82 (16), 3312, 1999 | 408 | 1999 |
| 29.5%‐efficient GaInP/GaAs tandem solar cells KA Bertness, SR Kurtz, DJ Friedman, AE Kibbler, C Kramer, JM Olson Applied Physics Letters 65 (8), 989-991, 1994 | 393 | 1994 |
| III–N–V semiconductors for solar photovoltaic applications JF Geisz, DJ Friedman Semiconductor Science and Technology 17 (8), 769, 2002 | 381 | 2002 |
| Photocurrent of 1 eV GaInNAs lattice-matched to GaAs JF Geisz, DJ Friedman, JM Olson, SR Kurtz, BM Keyes Journal of Crystal Growth 195 (1-4), 401-408, 1998 | 340 | 1998 |
| Structural changes during annealing of GaInAsN S Kurtz, J Webb, L Gedvilas, D Friedman, J Geisz, J Olson, R King, ... Applied Physics Letters 78 (6), 748-750, 2001 | 284 | 2001 |
| Optical enhancement of the open-circuit voltage in high quality GaAs solar cells MA Steiner, JF Geisz, I Garcia, DJ Friedman, A Duda, SR Kurtz Journal of Applied Physics 113 (12), 123109, 2013 | 244 | 2013 |
| Enhanced external radiative efficiency for 20.8% efficient single-junction GaInP solar cells JF Geisz, MA Steiner, I Garcia, SR Kurtz, DJ Friedman Applied Physics Letters 103 (4), 041118, 2013 | 231 | 2013 |
| Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy DB Jackrel, SR Bank, HB Yuen, MA Wistey, JS Harris Jr, AJ Ptak, ... Journal of Applied Physics 101 (11), 114916, 2007 | 220 | 2007 |
| Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge JM Olson, SR Kurtz, DJ Friedman US Patent 6,281,426, 2001 | 208 | 2001 |
| Effect of nitrogen on the band structure of GaInNAs alloys W Shan, W Walukiewicz, JW Ager III, EE Haller, JF Geisz, DJ Friedman, ... Journal of applied physics 86 (4), 2349-2351, 1999 | 202 | 1999 |
| Progress and challenges for next-generation high-efficiency multijunction solar cells DJ Friedman Current Opinion in Solid State and Materials Science 14 (6), 131-138, 2010 | 188 | 2010 |
| Application of a novel multiple scattering approach to photoelectron diffraction and Auger electron diffraction AP Kaduwela, DJ Friedman, CS Fadley Journal of Electron Spectroscopy and Related Phenomena 57 (3-4), 223-278, 1991 | 163 | 1991 |
| Final-state effects in photoelectron diffraction DJ Friedman, CS Fadley Journal of Electron Spectroscopy and Related Phenomena 51, 689-700, 1990 | 163 | 1990 |
| Band anticrossing in III–N–V alloys W Shan, W Walukiewicz, KM Yu, JW Ager Iii, EE Haller, JF Geisz, ... physica status solidi (b) 223 (1), 75-85, 2001 | 157 | 2001 |
| Effect of nitrogen on the electronic band structure of group III-NV alloys W Shan, W Walukiewicz, KM Yu, JW Ager III, EE Haller, JF Geisz, ... Physical Review B 62 (7), 4211, 2000 | 148 | 2000 |
John GeiszNational Renewable Energy LaboratoryVerified email at nrel.gov
