Daniel J. Friedman
Title
Cited by
Cited by
Year
Band anticrossing in GaInNAs alloys
W Shan, W Walukiewicz, JW Ager III, EE Haller, JF Geisz, DJ Friedman, ...
Physical Review Letters 82 (6), 1221, 1999
18861999
40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions
JF Geisz, DJ Friedman, JS Ward, A Duda, WJ Olavarria, TE Moriarty, ...
Applied Physics Letters 93 (12), 123505, 2008
5682008
1-eV solar cells with GaInNAs active layer
DJ Friedman, JF Geisz, SR Kurtz, JM Olson
Journal of Crystal Growth 195 (1-4), 409-415, 1998
4561998
High-efficiency triple-junction solar cells grown inverted with a metamorphic bottom junction
JF Geisz, S Kurtz, MW Wanlass, JS Ward, A Duda, DJ Friedman, ...
Applied Physics Letters 91 (2), 023502, 2007
4442007
Nitrogen-Activated Transitions, Level Repulsion, and Band Gap Reduction in with
JD Perkins, A Mascarenhas, Y Zhang, JF Geisz, DJ Friedman, JM Olson, ...
Physical review letters 82 (16), 3312, 1999
4081999
Nitrogen-Activated Transitions, Level Repulsion, and Band Gap Reduction in with
JD Perkins, A Mascarenhas, Y Zhang, JF Geisz, DJ Friedman, JM Olson, ...
Physical review letters 82 (16), 3312, 1999
4081999
29.5%‐efficient GaInP/GaAs tandem solar cells
KA Bertness, SR Kurtz, DJ Friedman, AE Kibbler, C Kramer, JM Olson
Applied Physics Letters 65 (8), 989-991, 1994
3931994
III–N–V semiconductors for solar photovoltaic applications
JF Geisz, DJ Friedman
Semiconductor Science and Technology 17 (8), 769, 2002
3812002
Photocurrent of 1 eV GaInNAs lattice-matched to GaAs
JF Geisz, DJ Friedman, JM Olson, SR Kurtz, BM Keyes
Journal of Crystal Growth 195 (1-4), 401-408, 1998
3401998
Structural changes during annealing of GaInAsN
S Kurtz, J Webb, L Gedvilas, D Friedman, J Geisz, J Olson, R King, ...
Applied Physics Letters 78 (6), 748-750, 2001
2842001
Optical enhancement of the open-circuit voltage in high quality GaAs solar cells
MA Steiner, JF Geisz, I Garcia, DJ Friedman, A Duda, SR Kurtz
Journal of Applied Physics 113 (12), 123109, 2013
2442013
Enhanced external radiative efficiency for 20.8% efficient single-junction GaInP solar cells
JF Geisz, MA Steiner, I Garcia, SR Kurtz, DJ Friedman
Applied Physics Letters 103 (4), 041118, 2013
2312013
Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy
DB Jackrel, SR Bank, HB Yuen, MA Wistey, JS Harris Jr, AJ Ptak, ...
Journal of Applied Physics 101 (11), 114916, 2007
2202007
Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge
JM Olson, SR Kurtz, DJ Friedman
US Patent 6,281,426, 2001
2082001
Effect of nitrogen on the band structure of GaInNAs alloys
W Shan, W Walukiewicz, JW Ager III, EE Haller, JF Geisz, DJ Friedman, ...
Journal of applied physics 86 (4), 2349-2351, 1999
2021999
Progress and challenges for next-generation high-efficiency multijunction solar cells
DJ Friedman
Current Opinion in Solid State and Materials Science 14 (6), 131-138, 2010
1882010
Application of a novel multiple scattering approach to photoelectron diffraction and Auger electron diffraction
AP Kaduwela, DJ Friedman, CS Fadley
Journal of Electron Spectroscopy and Related Phenomena 57 (3-4), 223-278, 1991
1631991
Final-state effects in photoelectron diffraction
DJ Friedman, CS Fadley
Journal of Electron Spectroscopy and Related Phenomena 51, 689-700, 1990
1631990
Band anticrossing in III–N–V alloys
W Shan, W Walukiewicz, KM Yu, JW Ager Iii, EE Haller, JF Geisz, ...
physica status solidi (b) 223 (1), 75-85, 2001
1572001
Effect of nitrogen on the electronic band structure of group III-NV alloys
W Shan, W Walukiewicz, KM Yu, JW Ager III, EE Haller, JF Geisz, ...
Physical Review B 62 (7), 4211, 2000
1482000
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