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paolo gaucci
paolo gaucci
Institute of Nanotechnology CNR-NANOTEC Lecce
Verified email at nanotec.cnr.it
Title
Cited by
Cited by
Year
Kink effect in short-channel polycrystalline silicon thin-film transistors
A Valletta, P Gaucci, L Mariucci, G Fortunato, SD Brotherton
Applied physics letters 85 (15), 3113-3115, 2004
662004
“Hump” characteristics and edge effects in polysilicon thin film transistors
A Valletta, P Gaucci, L Mariucci, G Fortunato, F Templier
Journal of Applied Physics 104 (12), 2008
632008
Short channel effects in polysilicon thin film transistors
G Fortunato, A Valletta, P Gaucci, L Mariucci, SD Brotherton
Thin Solid Films 487 (1-2), 221-226, 2005
372005
Threshold voltage in short channel polycrystalline silicon thin film transistors: Influence of drain induced barrier lowering and floating body effects
A Valletta, P Gaucci, L Mariucci, A Pecora, M Cuscunà, L Maiolo, ...
Journal of Applied Physics 107 (7), 2010
272010
Self-heating effects in p-channel polysilicon TFTs fabricated on different substrates
G Fortunato, M Cuscuna, P Gaucci, L Maiolo, L Mariucci, A Pecora, ...
Journal of the Korean Physical Society 54 (1), 455-462, 2009
272009
Analysis of self-heating-related instability in self-aligned p-channel polycrystalline-silicon thin-film transistors
P Gaucci, A Valletta, L Mariucci, A Pecora, L Maiolo, G Fortunato
IEEE Electron Device Letters 31 (8), 830-832, 2010
192010
Role of gate oxide thickness in controlling short channel effects in polycrystalline silicon thin film transistors
A Valletta, P Gaucci, L Mariucci, A Pecora, M Cuscunà, L Maiolo, ...
Applied Physics Letters 95 (3), 2009
162009
Electrical stability in self-aligned p-channel polysilicon thin film transistors
P Gaucci, L Mariucci, A Valletta, A Pecora, G Fortunato, F Templier
Thin Solid Films 515 (19), 7571-7575, 2007
152007
Modelling velocity saturation and kink effects in p-channel polysilicon thin-film transistors
A Valletta, P Gaucci, L Mariucci, G Fortunato
Thin Solid Films 515 (19), 7417-7421, 2007
152007
Numerical simulation of parasitic resistance effects in polycrystalline silicon TFTs
P Gaucci, A Valletta, L Mariucci, G Fortunato, SD Brotherton
IEEE transactions on electron devices 53 (3), 573-577, 2006
142006
Hot-carrier effects in p-channel polycrystalline silicon thin film transistors
L Mariucci, A Valletta, P Gaucci, G Fortunato, F Templier
Applied physics letters 89 (18), 2006
112006
Electrical characterization of directionally solidified polycrystalline silicon
A Bonfiglietti, A Valletta, P Gaucci, L Mariucci, G Fortunato, SD Brotherton
Journal of applied physics 98 (3), 2005
92005
Role of field enhanced mechanisms and impact ionization on the threshold voltage of short channel polycrystalline silicon thin film transistors
P Gaucci, A Valletta, L Mariucci, A Pecora, M Cuscunà, L Maiolo, ...
Applied Physics Letters 93 (19), 2008
82008
Modelling velocity saturation effects in polysilicon thin-film transistors
A Valletta, P Gaucci, L Mariucci, G Fortunato
Japanese journal of applied physics 45 (5S), 4374, 2006
82006
Downscaling effects on self-heating related instabilities in p-channel polycrystalline silicon thin film transistors
A Valletta, P Gaucci, L Mariucci, A Pecora, L Maiolo, G Fortunato
Applied Physics Letters 99 (5), 2011
52011
Downscaling issues in polycrystalline silicon TFTs
G Fortunato, M Cuscunà, P Gaucci, L Maiolo, L Mariucci, A Pecora, ...
ECS Transactions 33 (5), 3, 2010
42010
Negative bias–temperature stress in non-self-aligned p-channel polysilicon TFTs
L Mariucci, P Gaucci, A Valletta, M Cuscunà, L Maiolo, A Pecora, ...
Thin solid films 517 (23), 6379-6382, 2009
42009
Organic thin film transistors on back molded plastic foil
P Gaucci, N Fruehauf, A Ilchmann, B Polzinger, W Eberhardt, H Kueck
Flexible and Printed Electronics 3 (1), 015008, 2018
32018
Edge effects in self-heating-related instabilities in p-channel polycrystalline-silicon thin-film transistors
L Mariucci, P Gaucci, A Valletta, A Pecora, L Maiolo, M Cuscuna, ...
IEEE electron device letters 32 (12), 1707-1709, 2011
32011
Hot carrier effects in p-channel polycrystalline silicon thin film transistors fabricated on flexible substrates
L Mariucci, P Gaucci, A Valletta, F Templier, G Fortunato
Japanese journal of applied physics 46 (3S), 1299, 2007
32007
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