| The properties of plasma-enhanced atomic layer deposition (ALD) ZnO thin films and comparison with thermal ALD D Kim, H Kang, JM Kim, H Kim Applied surface science 257 (8), 3776-3779, 2011 | 149 | 2011 |
| True material limit of power devices—Applied to 2-D superjunction MOSFET H Kang, F Udrea IEEE Transactions on Electron Devices 65 (4), 1432-1439, 2018 | 49 | 2018 |
| n-ZnO: N/p-Si nanowire photodiode prepared by atomic layer deposition H Kang, J Park, T Choi, H Jung, KH Lee, S Im, H Kim Applied Physics Letters 100 (4), 2012 | 48 | 2012 |
| Photocatalytic effect of thermal atomic layer deposition of TiO2 on stainless steel H Kang, CS Lee, DY Kim, J Kim, W Choi, H Kim Applied Catalysis B: Environmental 104 (1-2), 6-11, 2011 | 43 | 2011 |
| Nitrogen-doped ZnO/n-Si core–shell nanowire photodiode prepared by atomic layer deposition KY Ko, H Kang, W Lee, CW Lee, J Park, HS Lee, S Im, HG Kim, SH Kim, ... Materials Science in Semiconductor Processing 33, 154-160, 2015 | 22 | 2015 |
| High efficiency n-ZnO/p-Si core–shell nanowire photodiode based on well-ordered Si nanowire array with smooth surface KY Ko, H Kang, J Kim, W Lee, HS Lee, S Im, JY Kang, JM Myoung, ... Materials science in semiconductor processing 27, 297-302, 2014 | 21 | 2014 |
| Material limit of power devices—Applied to asymmetric 2-D superjunction MOSFET H Kang, F Udrea IEEE Transactions on Electron Devices 65 (8), 3326-3332, 2018 | 19 | 2018 |
| ZnO homojunction core–shell nanorods ultraviolet photo-detecting diodes prepared by atomic layer deposition KY Ko, H Kang, J Park, BW Min, HS Lee, S Im, JY Kang, JM Myoung, ... Sensors and Actuators A: Physical 210, 197-204, 2014 | 19 | 2014 |
| Static and dynamic figures of merits (FOM) for superjunction MOSFETs H Kang, F Udrea 2019 31st International Symposium on Power Semiconductor Devices and ICs …, 2019 | 16 | 2019 |
| Theory of 3-D superjunction MOSFET H Kang, F Udrea IEEE Transactions on Electron Devices 66 (12), 5254-5259, 2019 | 12 | 2019 |
| Analytic model of specific ON-state resistance for superjunction MOSFETs with an oxide pillar H Kang, F Udrea IEEE Electron Device Letters 40 (5), 761-764, 2019 | 12 | 2019 |
| Trench angle: A key design factor for a deep trench superjunction MOSFET H Kang, J Lee, K Lee, Y Choi Semiconductor Science and Technology 30 (12), 125008, 2015 | 11 | 2015 |
| On the specific on-state resistance of superjunction MOSFETs with a compensated pillar H Kang, F Udrea IEEE Electron Device Letters 39 (12), 1904-1907, 2018 | 10 | 2018 |
| Enhanced performance of 50 nm ultra-narrow-body silicon carbide MOSFETs based on FinFET effect T Kato, Y Fukuoka, H Kang, K Hamada, A Onogi, H Fujiwara, T Ito, ... 2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020 | 9 | 2020 |
| Dynamic CGD and dV/dt in Superjunction MOSFETs H Kang, F Udrea IEEE Transactions on Electron Devices 67 (4), 1523-1529, 2020 | 8 | 2020 |
| The FinFET effect in silicon carbide MOSFETs F Udrea, K Naydenov, H Kang, T Kato, E Kagoshima, T Nishiwaki, ... 2021 33rd International Symposium on Power Semiconductor Devices and ICs …, 2021 | 7 | 2021 |
| True origin of gate ringing in superjunction MOSFETs: Device view H Kang, F Udrea IEEE Transactions on Power Electronics 36 (5), 5362-5370, 2020 | 7 | 2020 |
| Superjunction semiconductor device KW Lee, H Kang, J Lee US Patent 9,887,280, 2018 | 6 | 2018 |
| Experimental demonstration, challenges, and prospects of the vertical SiC FinFET F Udrea, K Naydenov, H Kang, T Kato, E Kagoshima, H Fujioka, H Tomita, ... 2022 IEEE 34th International Symposium on Power Semiconductor Devices and …, 2022 | 5 | 2022 |
| Effect of pillar ripple on static and dynamic trade-offs in superjunction MOSFETs H Kang, N Donato, F Udrea IEEE Electron Device Letters 41 (5), 753-756, 2020 | 5 | 2020 |
Nazareno DonatoUniversity of Cambridge, Cambridge Microelectronics Ltd.Verified email at cam.ac.uk
