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Keshuang Li
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Refractive indices of MBE-grown AlxGa (1− x) As ternary alloys in the transparent wavelength region
K Papatryfonos, T Angelova, A Brimont, B Reid, S Guldin, PR Smith, ...
AIP Advances 11 (2), 2021
822021
All-MBE grown InAs/GaAs quantum dot lasers with thin Ge buffer layer on Si substrates
J Yang, Z Liu, P Jurczak, M Tang, K Li, S Pan, A Sanchez, R Beanland, ...
Journal of Physics D: Applied Physics 54 (3), 035103, 2020
402020
O-band InAs/GaAs quantum dot laser monolithically integrated on exact (0 0 1) Si substrate
K Li, Z Liu, M Tang, M Liao, D Kim, H Deng, AM Sanchez, R Beanland, ...
Journal of Crystal Growth 511, 56-60, 2019
402019
Inversion Boundary Annihilation in GaAs Monolithically Grown on On‐Axis Silicon (001)
K Li, J Yang, Y Lu, M Tang, P Jurczak, Z Liu, X Yu, JS Park, H Deng, H Jia, ...
Advanced Optical Materials 8 (22), 2000970, 2020
292020
Thin Ge buffer layer on silicon for integration of III-V on silicon
J Yang, P Jurczak, F Cui, K Li, M Tang, L Billiald, R Beanland, ...
Journal of Crystal Growth 514, 109-113, 2019
252019
The role of different types of dopants in 1.3 μm InAs/GaAs quantum-dot lasers
H Deng, L Jarvis, Z Li, Z Liu, M Tang, K Li, J Yang, B Maglio, S Shutts, ...
Journal of Physics D: Applied Physics 55 (21), 215105, 2022
112022
Low threading dislocation density and antiphase boundary free GaAs epitaxially grown on on-axis Si (001) substrates
J Yang, K Li, H Jia, H Deng, X Yu, P Jurczak, JS Park, S Pan, W Li, ...
Nanoscale 14 (46), 17247-17253, 2022
112022
Impact of ex-situ annealing on strain and composition of MBE grown GeSn
H Jia, P Jurczak, J Yang, M Tang, K Li, H Deng, M Dang, S Chen, H Liu
Journal of Physics D: Applied Physics 53 (48), 485104, 2020
92020
Refractive indices of MBE-grown AlxGa (1− x) As ternary alloys in the transparent wavelength region, AIP Adv
K Papatryfonos, T Angelova, A Brimont, B Reid, S Guldin, PR Smith, ...
62021
The epitaxial growth and unique morphology of InAs quantum dots embedded in a Ge matrix
H Jia, J Yang, M Tang, W Li, P Jurczak, X Yu, T Zhou, JS Park, K Li, ...
Journal of Physics D: Applied Physics 55 (49), 494002, 2022
42022
III-V Quantum Dot Lasers Monolithically Grown on Silicon
H Deng, K Li, M Tang, J Wu, M Liao, Y Lu, S Pan, S Chen, A Seeds, H Liu
Optical Fiber Communication Conference, W4E. 1, 2019
42019
GaAs compounds heteroepitaxy on silicon for opto and nano electronic applications
M Martin, T Baron, Y Bogumulowicz, H Deng, K Li, M Tang, H Liu
Post-transition metals, 2020
22020
InAs/GaAs Quantum Dot Lasers Monolithically Integrated on Group IV Platform
K Li, M Tang, M Liao, J Wu, S Chen, A Seeds, H Liu
2018 IEEE International Electron Devices Meeting (IEDM), 23.5. 1-23.5. 4, 2018
22018
III-V Quantum Dot Lasers Monolithically Integrated on On-axis Si Substrates
K Li
UCL (University College London), 2022
12022
Inversion boundary annihilation in GaAs grown on On‐Axis Silicon (001) via Molecular Beam Epitaxy
X Yu, K Li, J Yang, Y Lu, Z Liu, M Tang, P Jurczak, JS Park, H Deng, H Jia, ...
Emerging Applications in Silicon Photonics II 11880, 118800H, 2021
2021
Quantum Dot Lasers Monolithically Integrated on Si Substrate
K Li, M Tang, Z Liu, Y Wang, S Yu, T Zhou, Z Zhang, M Martin, T Baron, ...
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