| Refractive indices of MBE-grown AlxGa (1− x) As ternary alloys in the transparent wavelength region K Papatryfonos, T Angelova, A Brimont, B Reid, S Guldin, PR Smith, ... AIP Advances 11 (2), 2021 | 77 | 2021 |
| O-band InAs/GaAs quantum dot laser monolithically integrated on exact (0 0 1) Si substrate K Li, Z Liu, M Tang, M Liao, D Kim, H Deng, AM Sanchez, R Beanland, ... Journal of Crystal Growth 511, 56-60, 2019 | 37 | 2019 |
| All-MBE grown InAs/GaAs quantum dot lasers with thin Ge buffer layer on Si substrates J Yang, Z Liu, P Jurczak, M Tang, K Li, S Pan, A Sanchez, R Beanland, ... Journal of Physics D: Applied Physics 54 (3), 035103, 2020 | 36 | 2020 |
| Inversion Boundary Annihilation in GaAs Monolithically Grown on On‐Axis Silicon (001) K Li, J Yang, Y Lu, M Tang, P Jurczak, Z Liu, X Yu, JS Park, H Deng, H Jia, ... Advanced Optical Materials 8 (22), 2000970, 2020 | 27 | 2020 |
| Thin Ge buffer layer on silicon for integration of III-V on silicon J Yang, P Jurczak, F Cui, K Li, M Tang, L Billiald, R Beanland, ... Journal of Crystal Growth 514, 109-113, 2019 | 24 | 2019 |
| The role of different types of dopants in 1.3 μm InAs/GaAs quantum-dot lasers H Deng, L Jarvis, Z Li, Z Liu, M Tang, K Li, J Yang, B Maglio, S Shutts, ... Journal of Physics D: Applied Physics 55 (21), 215105, 2022 | 9 | 2022 |
| Low threading dislocation density and antiphase boundary free GaAs epitaxially grown on on-axis Si (001) substrates J Yang, K Li, H Jia, H Deng, X Yu, P Jurczak, JS Park, S Pan, W Li, ... Nanoscale 14 (46), 17247-17253, 2022 | 9 | 2022 |
| Impact of ex-situ annealing on strain and composition of MBE grown GeSn H Jia, P Jurczak, J Yang, M Tang, K Li, H Deng, M Dang, S Chen, H Liu Journal of Physics D: Applied Physics 53 (48), 485104, 2020 | 8 | 2020 |
| The epitaxial growth and unique morphology of InAs quantum dots embedded in a Ge matrix H Jia, J Yang, M Tang, W Li, P Jurczak, X Yu, T Zhou, JS Park, K Li, ... Journal of Physics D: Applied Physics 55 (49), 494002, 2022 | 4 | 2022 |
| III-V Quantum Dot Lasers Monolithically Grown on Silicon H Deng, K Li, M Tang, J Wu, M Liao, Y Lu, S Pan, S Chen, A Seeds, H Liu Optical Fiber Communication Conference, W4E. 1, 2019 | 4 | 2019 |
| GaAs compounds heteroepitaxy on silicon for opto and nano electronic applications M Martin, T Baron, Y Bogumulowicz, H Deng, K Li, M Tang, H Liu Post-transition metals, 2020 | 2 | 2020 |
| InAs/GaAs Quantum Dot Lasers Monolithically Integrated on Group IV Platform K Li, M Tang, M Liao, J Wu, S Chen, A Seeds, H Liu 2018 IEEE International Electron Devices Meeting (IEDM), 23.5. 1-23.5. 4, 2018 | 2 | 2018 |
| III-V Quantum Dot Lasers Monolithically Integrated on On-axis Si Substrates K Li UCL (University College London), 2022 | | 2022 |
| Inversion boundary annihilation in GaAs grown on On‐Axis Silicon (001) via Molecular Beam Epitaxy X Yu, K Li, J Yang, Y Lu, Z Liu, M Tang, P Jurczak, JS Park, H Deng, H Jia, ... Emerging Applications in Silicon Photonics II 11880, 118800H, 2021 | | 2021 |
| Quantum Dot Lasers Monolithically Integrated on Si Substrate K Li, M Tang, Z Liu, Y Wang, S Yu, T Zhou, Z Zhang, M Martin, T Baron, ... | | |
Mingchu TangUniversity College LondonVerified email at ucl.ac.uk
