| Inversion Boundary Annihilation in GaAs Monolithically Grown on On‐Axis Silicon (001) K Li, J Yang, Y Lu, M Tang, P Jurczak, Z Liu, X Yu, JS Park, H Deng, H Jia, ... Advanced Optical Materials 8 (22), 2000970, 2020 | 31 | 2020 |
| Cucurbituril-mediated quantum dot aggregates formed by aqueous self-assembly for sensing applications WJ Peveler, H Jia, T Jeen, K Rees, TJ Macdonald, Z Xia, WIK Chio, ... Chemical Communications 55 (38), 5495-5498, 2019 | 21 | 2019 |
| Low threading dislocation density and antiphase boundary free GaAs epitaxially grown on on-axis Si (001) substrates J Yang, K Li, H Jia, H Deng, X Yu, P Jurczak, JS Park, S Pan, W Li, ... Nanoscale 14 (46), 17247-17253, 2022 | 13 | 2022 |
| Impact of ex-situ annealing on strain and composition of MBE grown GeSn H Jia, P Jurczak, J Yang, M Tang, K Li, H Deng, M Dang, S Chen, H Liu Journal of Physics D: Applied Physics 53 (48), 485104, 2020 | 10 | 2020 |
| Mid-infrared InAs/InAsSb Type-II superlattices grown on silicon by MOCVD R Brown, BP Ratiu, H Jia, KM Azizur-Rahman, M Dang, M Tang, B Liang, ... Journal of Crystal Growth 598, 126860, 2022 | 5 | 2022 |
| High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy M Mtunzi, H Jia, Y Hou, X Yu, H Zeng, J Yang, X Yan, I Skandalos, ... Journal of Physics D: Applied Physics 57 (25), 255101, 2024 | 4 | 2024 |
| Optically enhanced single-and multi-stacked 1.55 μm InAs/InAlGaAs/InP quantum dots for laser applications X Yu, H Jia, C Dear, J Yuan, H Deng, M Tang, H Liu Journal of Physics D: Applied Physics 56 (28), 285101, 2023 | 4 | 2023 |
| The epitaxial growth and unique morphology of InAs quantum dots embedded in a Ge matrix H Jia, J Yang, M Tang, W Li, P Jurczak, X Yu, T Zhou, JS Park, K Li, ... Journal of Physics D: Applied Physics 55 (49), 494002, 2022 | 4 | 2022 |
| Long-wavelength InAs/InAlGaAs quantum dot microdisk lasers on InP (001) substrate H Jia, X Yu, T Zhou, C Dear, J Yuan, M Tang, Z Yan, BP Ratiu, Q Li, ... Applied physics letters 122 (11), 2023 | 3 | 2023 |
| Indium-flush technique for C-band InAs/InP quantum dots J Yuan, C Dear, H Jia, JS Park, Y Hou, K El Hajraoui, H Zeng, H Deng, ... APL Materials 12 (12), 2024 | 1 | 2024 |
| Effects of phosphorous and antimony doping on thin Ge layers grown on Si X Yu, H Jia, J Yang, MG Masteghin, H Beere, M Mtunzi, H Deng, S Huo, ... Scientific Reports 14 (1), 7969, 2024 | 1 | 2024 |
| Surface/interface engineering of InAs quantum dot edge-emitting diodes toward III-V/SiN photonic integration Y Hou, I Skandalos, M Tang, H Jia, H Deng, X Yu, Y Noori, ... Journal of Luminescence 258, 119799, 2023 | 1 | 2023 |
| Si-Based 1.3 μm InAs/GaAs QD Lasers H Deng, J Yang, H Jia, M Tang, B Maglio, L Jarvis, S Shutts, PM Smowton, ... 2022 IEEE Photonics Conference (IPC), 1-2, 2022 | 1 | 2022 |
| A thermally erasable silicon oxide layer for molecular beam epitaxy Y Hou, H Jia, M Tang, AB Mosberg, QM Ramasse, I Skandalos, Y Noori, ... Journal of Physics D: Applied Physics 55 (42), 424004, 2022 | 1 | 2022 |
| 1.3 µm InAs/GaAs quantum‐dot lasers with p‐type, n‐type, and co‐doped modulation H Deng, JS Park, X Yu, Z Liu, H Jia, H Zeng, J Yang, S Pan, S Chen, ... Advanced Physics Research 3 (10), 2400045, 2024 | | 2024 |
| Effective InAsP dislocation filtering layers for InP heteroepitaxy on CMOS-standard (001) silicon S Liu, BP Ratiu, H Jia, Z Yan, KM Wong, M Martin, M Tang, T Baron, H Liu, ... Applied Physics Letters 125 (8), 2024 | | 2024 |
| MBE growth of Ge1-xSnx devices with intrinsic disorder SN Holmes, Y Gul, I Pullen, J Gough, K Thomas, H Jia, M Tang, H Liu, ... Journal of Physics D: Applied Physics, 2024 | | 2024 |
| Inversion boundary annihilation in GaAs grown on On‐Axis Silicon (001) via Molecular Beam Epitaxy X Yu, K Li, J Yang, Y Lu, Z Liu, M Tang, P Jurczak, JS Park, H Deng, H Jia, ... Emerging Applications in Silicon Photonics II 11880, 118800H, 2021 | | 2021 |
Huiyun LiuProfessor of Semiconductor Photonics, University College LondonVerified email at ucl.ac.uk
