| Direct band gap wurtzite gallium phosphide nanowires S Assali, I Zardo, S Plissard, D Kriegner, MA Verheijen, G Bauer, ... Nano letters 13 (4), 1559-1563, 2013 | 370 | 2013 |
| Hexagonal silicon realized HIT Hauge, MA Verheijen, S Conesa-Boj, T Etzelstorfer, M Watzinger, ... Nano letters 15 (9), 5855-5860, 2015 | 210 | 2015 |
| Efficient water reduction with gallium phosphide nanowires A Standing, S Assali, L Gao, MA Verheijen, D Van Dam, Y Cui, ... Nature communications 6 (1), 7824, 2015 | 190 | 2015 |
| Monolithic infrared silicon photonics: The rise of (Si) GeSn semiconductors O Moutanabbir, S Assali, X Gong, E O'Reilly, CA Broderick, B Marzban, ... Applied Physics Letters 118 (11), 2021 | 154 | 2021 |
| Atomic layer deposition of Pd and Pt nanoparticles for catalysis: on the mechanisms of nanoparticle formation AJM Mackus, MJ Weber, NFW Thissen, D Garcia-Alonso, RHJ Vervuurt, ... Nanotechnology 27 (3), 034001, 2015 | 118 | 2015 |
| Enhanced Sn incorporation in GeSn epitaxial semiconductors via strain relaxation S Assali, J Nicolas, O Moutanabbir Journal of Applied Physics 125 (2), 2019 | 106 | 2019 |
| Growth and Optical Properties of Direct Band Gap Ge/Ge0.87Sn0.13 Core/Shell Nanowire Arrays S Assali, A Dijkstra, A Li, S Koelling, MA Verheijen, L Gagliano, ... Nano letters 17 (3), 1538-1544, 2017 | 103 | 2017 |
| Atomically uniform Sn-rich GeSn semiconductors with 3.0–3.5 μm room-temperature optical emission S Assali, J Nicolas, S Mukherjee, A Dijkstra, O Moutanabbir Applied Physics Letters 112 (25), 2018 | 96 | 2018 |
| All‐Group IV Transferable Membrane Mid‐Infrared Photodetectors MRM Atalla, S Assali, A Attiaoui, C Lemieux‐Leduc, A Kumar, S Abdi, ... Advanced Functional Materials 31 (3), 2006329, 2021 | 85 | 2021 |
| Exploring crystal phase switching in GaP nanowires S Assali, L Gagliano, DS Oliveira, MA Verheijen, SR Plissard, LF Feiner, ... Nano Letters 15 (12), 8062-8069, 2015 | 73 | 2015 |
| High-bandwidth extended-SWIR GeSn photodetectors on silicon achieving ultrafast broadband spectroscopic response MRM Atalla, S Assali, S Koelling, A Attiaoui, O Moutanabbir Acs Photonics 9 (4), 1425-1433, 2022 | 72 | 2022 |
| Atom-by-atom analysis of semiconductor nanowires with parts per million sensitivity S Koelling, A Li, A Cavalli, S Assali, D Car, S Gazibegovic, E Bakkers, ... Nano letters 17 (2), 599-605, 2017 | 53 | 2017 |
| Optical properties of strained wurtzite gallium phosphide nanowires J Greil, S Assali, Y Isono, A Belabbes, F Bechstedt, FO Valega Mackenzie, ... Nano letters 16 (6), 3703-3709, 2016 | 53 | 2016 |
| Optical study of the band structure of wurtzite GaP nanowires S Assali, J Greil, I Zardo, A Belabbes, MWA De Moor, S Koelling, ... Journal of Applied Physics 120 (4), 2016 | 50 | 2016 |
| Dislocation pipe diffusion and solute segregation during the growth of metastable GeSn J Nicolas, S Assali, S Mukherjee, A Lotnyk, O Moutanabbir Crystal Growth & Design 20 (5), 3493-3498, 2020 | 48 | 2020 |
| Enhanced GeSn microdisk lasers directly released on Si Y Kim, S Assali, D Burt, Y Jung, HJ Joo, M Chen, Z Ikonic, O Moutanabbir, ... Advanced Optical Materials 10 (2), 2101213, 2022 | 47 | 2022 |
| Vacancy complexes in nonequilibrium germanium-tin semiconductors S Assali, M Elsayed, J Nicolas, MO Liedke, A Wagner, M Butterling, ... https://doi.org/10.1063/1.5108878, 2019 | 45 | 2019 |
| Unit cell structure of the wurtzite phase of GaP nanowires: X-ray diffraction studies and density functional theory calculations D Kriegner, S Assali, A Belabbes, T Etzelstorfer, V Holý, T Schülli, ... Physical Review B—Condensed Matter and Materials Physics 88 (11), 115315, 2013 | 45 | 2013 |
| Critical strain for Sn incorporation into spontaneously graded Ge/GeSn core/shell nanowires M Albani, S Assali, MA Verheijen, S Koelling, R Bergamaschini, F Pezzoli, ... Nanoscale 10 (15), 7250-7256, 2018 | 43 | 2018 |
| 1D photonic crystal direct bandgap GeSn-on-insulator laser HJ Joo, Y Kim, D Burt, Y Jung, L Zhang, M Chen, SJ Parluhutan, DH Kang, ... Applied Physics Letters 119 (20), 2021 | 42 | 2021 |
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