| Analysis of molecular‐beam epitaxial growth of InAs on GaAs (100) by reflection anisotropy spectroscopy SM Scholz, AB Müller, W Richter, DRT Zahn, DI Westwood, DA Woolf, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1992 | 91 | 1992 |
| Surface reconstructions of GaAs (111) A and (111) B: A static surface phase study by reflection high‐energy electron diffraction DA Woolf, DI Westwood, RH Williams Applied physics letters 62 (12), 1370-1372, 1993 | 80 | 1993 |
| Growth of InxGa1− xAs on GaAs (001) by molecular beam epitaxy DI Westwood, DA Woolf, RH Williams Journal of crystal growth 98 (4), 782-792, 1989 | 76 | 1989 |
| Comparison of the (2× 2) reconstructions of GaAs {111} surfaces JMC Thornton, P Weightman, DA Woolf, CJ Dunscombe Physical Review B 51 (20), 14459, 1995 | 62 | 1995 |
| The homoepitaxial growth of GaAs (111) A and (111) B by molecular beam epitaxy: an investigation of the temperature-dependent surface reconstructions and bulk electrical … DA Woolf, DI Westwood, RH Williams Semiconductor science and technology 8 (6), 1075, 1993 | 53 | 1993 |
| On the Richardson constant of intimate metal-GaAs Schottky barriers M Missous, EH Rhoderick, DA Woolf, SP Wilkes Semiconductor science and technology 7 (2), 218, 1992 | 51 | 1992 |
| Charge transfer across the As/Si (100)-2× 1 interface JA Evans, AD Laine, P Weightman, JAD Matthew, DA Woolf, DI Westwood, ... Physical Review B 46 (3), 1513, 1992 | 49 | 1992 |
| The molecular beam epitaxial growth of GaAs/GaAs (111) B: doping and growth temperature studies DA Woolf, Z Sobiesierski, DI Westwood, RH Williams Journal of applied physics 71 (10), 4908-4915, 1992 | 49 | 1992 |
| Adsorbed and substituted Sb dimers on GaAs (001) P Moriarty, PH Beton, YR Ma, M Henini, DA Woolf Physical Review B 53 (24), R16148, 1996 | 47 | 1996 |
| Optical second harmonic generation from Si (111) 1× 1-As and Si (100) 2× 1-As PV Kelly, ZR Tang, DA Woolf, RH Williams, JF McGilp Surface science 251, 87-91, 1991 | 46 | 1991 |
| The molecular beam epitaxial growth of InAs on GaAs (111) B-and (100)-oriented substrates: a comparative growth study SE Hooper, DI Westwood, DA Woolf, SS Heghoyan, RH Williams Semiconductor science and technology 8 (6), 1069, 1993 | 45 | 1993 |
| Ballistic electron emission microscopy studies of Au–CdTe and Au–GaAs interfaces and band structure AE Fowell, RH Williams, BE Richardson, AA Cafolla, DI Westwood, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1991 | 45 | 1991 |
| Reconstructions of the GaAs (111) B surface JMC Thornton, DA Woolf, P Weightman Applied surface science 123, 115-119, 1998 | 39 | 1998 |
| Existence of Ga-vacancy and as-trimer induced (2× 2) phases on the GaAs (111) A surface JMC Thornton, P Unsworth, MD Jackson, P Weightman, DA Woolf Surface science 316 (3), 231-237, 1994 | 38 | 1994 |
| Photoluminescence spectroscopy of near‐surface quantum wells: Electronic coupling between quantized energy levels and the sample surface Z Sobiesierski, DI Westwood, DA Woolf, T Fukui, H Hasegawa Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993 | 38 | 1993 |
| Reflectance anisotropy spectroscopy and reflection high-energy electron diffraction of submonolayer coverages of Si grown on GaAs (001) by molecular-beam epitaxy DA Woolf, KC Rose, J Rumberg, DI Westwood, F Reinhardt, SJ Morris, ... Physical Review B 51 (7), 4691, 1995 | 31 | 1995 |
| Residual strain measurements in thick layers grown on GaAs (100) by molecular beam epitaxy DI Westwood, DA Woolf Journal of applied physics 73 (3), 1187-1192, 1993 | 30 | 1993 |
| Optical monitoring of the development of InAs quantum dots on GaAs (001) by reflectance anisotropy spectroscopy E Steimetz, JT Zettler, W Richter, DI Westwood, DA Woolf, Z Sobiesierski Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996 | 29 | 1996 |
| Growth mode of ultrathin Sb layers on Si studied by spectroscopic ellipsometry and Raman scattering U Rossow, U Frotscher, N Esser, U Resch, T Müller, W Richter, DA Woolf, ... Applied surface science 63 (1-4), 35-39, 1993 | 28 | 1993 |
| Vibrational properties of arsenic on Si (111) H Wilhelm, W Richter, U Rossow, D Zahn, DA Woolf, DI Westwood, ... Surface science 251, 556-560, 1991 | 27 | 1991 |
