Ruomeng Huang
Ruomeng Huang
Lecturer in the School of Electronics and Computer Science, University of Southampton
Verified email at - Homepage
TitleCited byYear
Highly selective chemical vapor deposition of tin diselenide thin films onto patterned substrates via single source diselenoether precursors
CH De Groot, C Gurnani, AL Hector, R Huang, M Jura, W Levason, ...
Chemistry of Materials 24 (22), 4442-4449, 2012
Nonpolar resistive switching in Cu/SiC/Au non-volatile resistive memory devices
L Zhong, L Jiang, R Huang, CH De Groot
Applied Physics Letters 104 (9), 093507, 2014
Telluroether and Selenoether Complexes as Single Source Reagents for Low Pressure Chemical Vapor Deposition of Crystalline Ga2Te3 and Ga2Se3 Thin Films
K George, CH de Groot, C Gurnani, AL Hector, R Huang, M Jura, ...
Chemistry of Materials 25 (9), 1829-1836, 2013
Non-aqueous electrodeposition of p-block metals and metalloids from halometallate salts
PN Bartlett, D Cook, CHK de Groot, AL Hector, R Huang, A Jolleys, ...
Rsc Advances 3 (36), 15645-15654, 2013
Chemical vapour deposition of antimony chalcogenides with positional and orientational control: precursor design and substrate selectivity
SL Benjamin, CH De Groot, AL Hector, R Huang, E Koukharenko, ...
Journal of Materials Chemistry C 3 (2), 423-430, 2015
Controlling the nanostructure of bismuth telluride by selective chemical vapour deposition from a single source precursor
SL Benjamin, CHK de Groot, C Gurnani, AL Hector, R Huang, ...
Journal of Materials Chemistry A 2 (14), 4865-4869, 2014
Resistive switching of Cu/SiC/Au memory devices with a high ON/OFF ratio
L Zhong, PA Reed, R Huang, CH de Groot, L Jiang
Solid-State Electronics 94, 98-102, 2014
Area selective growth of titanium diselenide thin films into micropatterned substrates by low-pressure chemical vapor deposition
SL Benjamin, CH De Groot, C Gurnani, AL Hector, R Huang, K Ignatyev, ...
Chemistry of Materials 25 (23), 4719-4724, 2013
Non-aqueous electrodeposition of functional semiconducting metal chalcogenides: Ge 2 Sb 2 Te 5 phase change memory
PN Bartlett, SL Benjamin, CHK de Groot, AL Hector, R Huang, A Jolleys, ...
Materials Horizons 2 (4), 420-426, 2015
Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition
R Huang, K Sun, KS Kiang, KA Morgan, CH De Groot
Microelectronic Engineering 161, 7-12, 2016
Amorphous SiC based non-volatile resistive memories with ultrahigh ON/OFF ratios
L Zhong, PA Reed, R Huang, CH De Groot, L Jiang
Microelectronic Engineering 119, 61-64, 2014
Switching kinetics of SiC resistive memory for harsh environments
KA Morgan, J Fan, R Huang, L Zhong, RP Gowers, L Jiang, CH de Groot
AIP Advances 5 (7), 077121, 2015
Compliance-Free ZrO 2/ZrO 2− x/ZrO 2 Resistive Memory with Controllable Interfacial Multistate Switching Behaviour
R Huang, X Yan, S Ye, R Kashtiban, R Beanland, KA Morgan, ...
Nanoscale research letters 12 (1), 384, 2017
Contact resistance measurement of Ge2Sb2Te5 phase change material to TiN electrode by spacer etched nanowire
R Huang, K Sun, KS Kiang, R Chen, Y Wang, B Gholipour, DW Hewak, ...
Semiconductor Science and Technology 29 (9), 095003, 2014
Tin (iv) chalcogenoether complexes as single source precursors for the chemical vapour deposition of SnE 2 and SnE (E= S, Se) thin films
C Gurnani, SL Hawken, AL Hector, R Huang, M Jura, W Levason, ...
Dalton Transactions 47 (8), 2628-2637, 2018
Total Dose Hardness ofResistive Random Access Memory
KA Morgan, R Huang, K Potter, C Shaw, W Redman-White, CH De Groot
IEEE Transactions on Nuclear Science 61 (6), 2991-2996, 2014
Nanoscale arrays of antimony telluride single crystals by selective chemical vapor deposition
R Huang, SL Benjamin, C Gurnani, Y Wang, AL Hector, W Levason, ...
Scientific reports 6, 27593, 2016
Low pressure chemical vapour deposition of crystalline Ga2Te3 and Ga2Se3 thin films from single source precursors using telluroether and selenoether complexes
K George, CHK de Groot, C Gurnani, AL Hector, R Huang, M Jura, ...
Physics Procedia 46, 142-148, 2013
Phase-Change Memory Properties of Electrodeposited Ge-Sb-Te Thin Film
R Huang, GP Kissling, A Jolleys, PN Bartlett, AL Hector, W Levason, ...
Nanoscale research letters 10 (1), 432, 2015
The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices
KA Morgan, R Huang, S Pearce, CH De Groot
2014 IEEE International Symposium on Circuits and Systems (ISCAS), 432-435, 2014
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