Physical mechanisms of endurance degradation in TMO-RRAM B Chen, Y Lu, B Gao, YH Fu, FF Zhang, P Huang, YS Chen, LF Liu, ... Electron Devices Meeting (IEDM), 2011 IEEE International, 12.3. 1-12.3. 4, 2011 | 183 | 2011 |
An electronic silicon-based memristor with a high switching uniformity Y Lu, A Alvarez, CH Kao, JS Bow, SY Chen, IW Chen Nature Electronics 2 (2), 66-74, 2019 | 77 | 2019 |
A physical based analytic model of RRAM operation for circuit simulation P Huang, XY Liu, WH Li, YX Deng, B Chen, Y Lu, B Gao, L Zeng, KL Wei, ... 2012 International Electron Devices Meeting, 26.6. 1-26.6. 4, 2012 | 65 | 2012 |
A simplified model for resistive switching of oxide-based resistive random access memory devices Y Lu, B Gao, Y Fu, B Chen, L Liu, X Liu, J Kang Electron Device Letters, IEEE 33 (3), 306-308, 2012 | 41 | 2012 |
Scalability of voltage-controlled filamentary and nanometallic resistance memory devices Y Lu, JH Lee, IW Chen Nanoscale 9 (34), 12690-12697, 2017 | 37 | 2017 |
Nanofilament Dynamics in Resistance Memory: Model and Validation Y Lu, JH Lee, IW Chen ACS nano 9 (7), 7649-7660, 2015 | 28 | 2015 |
Improvement of endurance degradation for oxide based resistive switching memory devices correlated with oxygen vacancy accumulation effect Y Lu, B Chen, B Gao, Z Fang, YH Fu, JQ Yang, LF Liu, XY Liu, HY Yu, ... 2012 IEEE International Reliability Physics Symposium (IRPS), MY. 4.1-MY. 4.4, 2012 | 23 | 2012 |
Purely electronic nanometallic resistance switching random-access memory Y Lu, JH Yoon, Y Dong, IW Chen MRS Bulletin 43 (5), 358-364, 2018 | 19 | 2018 |
Distinguishing uniform switching from filamentary switching in resistance memory using a fracture test Y Lu, JH Lee, X Yang, IW Chen Nanoscale 8 (42), 18113-18120, 2016 | 11 | 2016 |
Tuning resistance states by thickness control in an electroforming-free nanometallic complementary resistance random access memory X Yang, Y Lu, J Lee, IW Chen Applied Physics Letters 108 (1), 013506, 2016 | 10 | 2016 |
Probing material conductivity in two-terminal devices by resistance difference Y Lu, IW Chen Applied Physics Letters 111 (8), 083501, 2017 | 4 | 2017 |
Quantum Electronic Interference in Nano Amorphous Silicon and Other Thin Film Resistance Memory Y Lu University of Pennsylvania, 2017 | 3 | 2017 |
Scaling behavior of pcm cells in off-state conduction J Chen, RGD Jeyasingh, B Gao, Y Lu, YX Deng, XY Liu, JF Kang, ... Proceedings of Technical Program of 2012 VLSI Technology, System and …, 2012 | 3 | 2012 |
Non-volatile resistance switching devices IW Chen, Y Lu US Patent App. 15/312,196, 2017 | 2 | 2017 |
Conducting Electrons in Amorphous Si Nanostructures: Coherent Interference and Metal-Insulator Transitions Mediated by Local Structures Y Lu, IW Chen arXiv preprint arXiv:1703.02203, 2017 | 2 | 2017 |
Pressure-Induced Insulator-to-Metal Transition Provides Evidence for Negative- Centers in Large-Gap Disordered Insulators Y Lu, IW Chen arXiv preprint arXiv:1703.02003, 2017 | 2 | 2017 |
Mechanical forming of resistive memory devices IW Chen, Y Lu US Patent 10,224,481, 2019 | 1 | 2019 |
Purely electronic nanometallic ReRAM Y Lu, JH Yoon, Y Dong, IW Chen arXiv preprint arXiv:1804.03302, 2018 | 1 | 2018 |
Probing Intrinsic Material Conductivity in Two-Terminal Devices: A Resistance-Difference Method Y Lu, IW Chen arXiv preprint arXiv:1610.07666, 2016 | 1 | 2016 |
Probing Intrinsic Material Conductivity in Two-Terminal Devices: A Resistance-Difference Method Y Lu, IW Chen arXiv preprint arXiv:1610.07666, 2016 | 1 | 2016 |