Jinwook Burm
Jinwook Burm
Verified email at sogang.ac.kr
TitleCited byYear
Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor
M Asif Khan, JN Kuznia, DT Olson, WJ Schaff, JW Burm, MS Shur
Applied Physics Letters 65 (9), 1121-1123, 1994
Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 C
MA Khan, MS Shur, JN Kuznia, Q Chen, J Burm, W Schaff
Applied physics letters 66 (9), 1083-1085, 1995
Short-channel GaN/AIGaN doped channel heterostructure field effect transistors with 36.1 cutoff freq
MA Khan, Q Chen, MS Shur, BT Dermott, JA Higgins, J Burm, W Schaff, ...
Electronics Letters 32 (4), 357, 1996
Ultra-low resistive ohmic contacts on GaN using Si implantation
J Burm, K Chu, WA Davis, WJ Schaff, LF Eastman, TJ Eustis
Applied physics letters 70 (4), 464-466, 1997
CW operation of short-channel GaN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHz
MA Khan, Q Chen, MS Shur, BT Dermott, JA Higgins, J Burm, WJ Schaff, ...
IEEE Electron Device Letters 17 (12), 584-585, 1996
GaN based heterostructure for high power devices
MA Khan, Q Chen, MS Shur, BT Dermott, JA Higgins, J Burm, WJ Schaff, ...
Solid-State Electronics 41 (10), 1555-1559, 1997
0.12-μm gate III-V nitride HFET's with high contact resistances
J Burm, K Chu, WJ Schaff, LF Eastman, MA Khan, Q Chen, JW Yang, ...
IEEE Electron Device Letters 18 (4), 141-143, 1997
75 ┼ GaN channel modulation doped field effect transistors
J Burm, WJ Schaff, LF Eastman, H Amano, I Akasaki
Applied physics letters 68 (20), 2849-2851, 1996
Cmos image sensor
BH Kim, J Burm, WT Choi
US Patent App. 12/781,739, 2011
Optimization of high-speed metal-semiconductor-metal photodetectors
J Burm, KI Litvin, WJ Schaff, LF Eastman
IEEE photonics technology letters 6 (6), 722-724, 1994
Low-frequency gain in MSM photodiodes due to charge accumulation and image force lowering
J Burm, LF Eastman
IEEE Photonics Technology Letters 8 (1), 113-115, 1996
Microwave performance of 0.25 Ám doped channel GaN/AlGaN heterostructure field effect transistor at elevated temperatures
Q Chen, R Gaska, MA Khan, MS Shur, A Ping, I Adesida, J Burm, ...
Electronics Letters 33 (7), 637-639, 1997
Recessed gate GaN MODFETs
J Burm, WJ Schaff, GH Martin, LF Eastman, H Amano, I Akasaki
Solid-State Electronics 41 (2), 247-250, 1997
Dark current reduction in APD with BCB passivation
HS Kim, JH Choi, HM Bang, Y Jee, SW Yun, J Burm, MD Kim, AG Choo
Electronics Letters 37 (7), 455-457, 2001
High-frequency, high-efficiency MSM photodetectors
J Burm, KI Litvin, DW Woodard, WJ Schaff, P Mandeville, MA Jaspan, ...
IEEE journal of quantum electronics 31 (8), 1504-1509, 1995
A 0.18-/spl mu/m CMOS 10-Gb/s Dual-Mode 10-PAM Serial Link Transceiver
B Song, K Kim, J Lee, J Burm
IEEE Transactions on Circuits and Systems I: Regular Papers 60 (2), 457-468, 2012
Suppression of avalanche multiplication at the periphery of diffused junction by floating guard rings in a planar InGaAs-InP avalanche photodiode
SR Cho, SK Yang, JS Ma, SD Lee, JS Yu, AG Choo, TI Kim, J Burm
IEEE Photonics Technology Letters 12 (5), 534-536, 2000
Doherty amplifier and transmitter using mixer
JS Park, D Kim, J Burm, S Lee, HB Lee
US Patent 8,340,606, 2012
An improved small-signal equivalent circuit model for III-V nitride MODFET's with large contact resistances
J Burm, WJ Schaff, LF Eastman, H Amano, I Akasaki
IEEE Transactions on Electron Devices 44 (5), 906-907, 1997
New coherent detector for terahertz radiation based on excitonic electroabsorption
W Sha, TB Norris, JW Burm, D Woodard, WJ Schaff
Applied physics letters 61 (15), 1763-1765, 1992
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