Chen Yang Yin 陈杨胤
Chen Yang Yin 陈杨胤
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TitleCited byYear
10×10nm2Hf/HfOxcrossbar resistive RAM with excellent performance, reliability and low-energy operation
B Govoreanu, GS Kar, YY Chen, V Paraschiv, S Kubicek, A Fantini, ...
2011 International Electron Devices Meeting, 31.6. 1-31.6. 4, 2011
Evidences of oxygen-mediated resistive-switching mechanism in TiN\ HfO\ Pt cells
L Goux, P Czarnecki, YY Chen, L Pantisano, XP Wang, R Degraeve, ...
Applied Physics Letters 97, 243509, 2010
Endurance/Retention Trade-off on HfO2/Metal Cap 1T1R Bipolar RRAM
IEEE transactions on electron devices 60 (3), 1114-1121, 2013
Understanding of the endurance failure in scaled HfO 2-based 1T1R RRAM through vacancy mobility degradation
YY Chen, R Degraeve, S Clima, B Govoreanu, L Goux, A Fantini, GS Kar, ...
Electron Devices Meeting (IEDM), 2012 IEEE International, 20.3. 1-20.3. 4, 2012
Intrinsic switching variability in HfO 2 RRAM
A Fantini, L Goux, R Degraeve, DJ Wouters, N Raghavan, G Kar, ...
2013 5th IEEE International Memory Workshop, 30-33, 2013
IEEE Int. Electron Devices Meet
B Govoreanu, GS Kar, YY Chen, V Paraschiv, S Kubicek, A Fantini, ...
Tech. Dig 31, 2011
Balancing SET/RESET pulse for> 1010 endurance in HfO2/Hf 1T1R bipolar RRAM
YY Chen, B Govoreanu, L Goux, R Degraeve, A Fantini, G SANKAR KAR, ...
IEEE transactions on electron devices 59 (12), 3243-3249, 2012
On the gradual unipolar and bipolar resistive switching of TiN\ HfO2\ Pt memory systems
L Goux, YY Chen, L Pantisano, XP Wang, G Groeseneken, M Jurczak, ...
Electrochemical and Solid-State Letters 13 (6), G54-G56, 2010
Dynamic ‘hour glass’ model for SET and RESET in HfO 2 RRAM
R Degraeve, A Fantini, S Clima, B Govoreanu, L Goux, YY Chen, ...
VLSI Technology (VLSIT), 2012 Symposium on, 75-76, 2012
Improvement of data retention in HfO2/Hf 1T1R RRAM cell under low operating current
YY Chen, M Komura, R Degraeve, B Govoreanu, L Goux, A Fantini, ...
International Electron Deives Meeting-IEDM, 352-355, 2013
Filament observation in metal-oxide resistive switching devices
U Celano, Y Yin Chen, DJ Wouters, G Groeseneken, M Jurczak, ...
Applied Physics Letters 102 (12), 121602, 2013
First-principles simulation of oxygen diffusion in HfO< inf> x</inf>: Role in the resistive switching mechanism
S Clima, YY Chen, R Degraeve, M Mees, K Sankaran, B Govoreanu, ...
Applied Physics Letters 100 (13), 133102-133102-4, 2012
Technical Digest-International Electron Devices Meeting
C Chen, L Goux, A Fantini, A Redolfi, S Clima, R Degraeve, Y Chen, ...
IEDM, 2015
Ultralow sub-500nA operating current high-performance TiNAl< inf> 2</inf> O< inf> 3</inf> HfO< inf> 2</inf> HfTiN bipolar RRAM achieved through understanding-based stack …
L Goux, A Fantini, G Kar, Y Chen, N Jossart, R Degraeve, S Clima, ...
VLSI Technology (VLSIT), 2012 Symposium on, 159-160, 2012
A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory
S Yu, Y Yin Chen, X Guan, HS Philip Wong, JA Kittl
Applied Physics Letters 100 (4), 043507, 2012
Intrinsic switching behavior in HfO2 RRAM by fast electrical measurements on novel 2R test structures
A Fantini, DJ Wouters, R Degraeve, L Goux, L Pantisano, G Kar, YY Chen, ...
Memory Workshop (IMW), 2012 4th IEEE International, 1-4, 2012
Insights into Ni-filament formation in unipolar-switching Ni/HfO2/TiN resistive random access memory device
Y Yin Chen, G Pourtois, C Adelmann, L Goux, B Govoreanu, R Degreave, ...
Applied Physics Letters 100 (11), 113513, 2012
Field-driven ultrafast sub-ns programming in W\Al2O3\Ti\CuTe-based 1T1R CBRAM system
L Goux, K Sankaran, G Kar, N Jossart, K Opsomer, R Degraeve, ...
2012 Symposium on VLSI Technology (VLSIT), 69-70, 2012
Analysis of Complementary RRAM Switching
DJ Wouters, L Zhang, A Fantini, R Degraeve, L Goux, YY Chen, ...
Electron Device Letters, IEEE 33 (8), 1186-1188, 2012
Complementary Role of Field and Temperature in Triggering ON/OFF Switching Mechanisms in Resistive RAM Cells
B Govoreanu, S Clima, IP Radu, YY Chen, DJ Wouters, M Jurczak
IEEE Transactions on Electron Devices 60 (8), 2471-2478, 2013
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