| ZnO transparent conducting films deposited by pulsed laser deposition for solar cell applications K Matsubara, P Fons, K Iwata, A Yamada, K Sakurai, H Tampo, S Niki Thin Solid Films 431, 369-372, 2003 | 348 | 2003 |
| Uniaxial locked epitaxy of ZnO on the face of sapphire P Fons, K Iwata, A Yamada, K Matsubara, S Niki, K Nakahara, T Tanabe, ... Applied Physics Letters 77 (12), 1801-1803, 2000 | 271 | 2000 |
| Growth of high-quality epitaxial ZnO films on α-Al2O3 P Fons, K Iwata, S Niki, A Yamada, K Matsubara Journal of Crystal Growth 201, 627-632, 1999 | 255 | 1999 |
| Nitrogen-induced defects in ZnO: N grown on sapphire substrate by gas source MBE K Iwata, P Fons, A Yamada, K Matsubara, S Niki Journal of Crystal Growth 209 (2-3), 526-531, 2000 | 230 | 2000 |
| Interactions between gallium and nitrogen dopants in ZnO films grown by radical-source molecular-beam epitaxy K Nakahara, H Takasu, P Fons, A Yamada, K Iwata, K Matsubara, ... Applied physics letters 79 (25), 4139-4141, 2001 | 190 | 2001 |
| ZnO growth on Si by radical source MBE K Iwata, P Fons, S Niki, A Yamada, K Matsubara, K Nakahara, T Tanabe, ... Journal of Crystal Growth 214, 50-54, 2000 | 172 | 2000 |
| Fabrication of wide-gap Cu (In1− xGax) Se2 thin film solar cells: a study on the correlation of cell performance with highly resistive i-ZnO layer thickness S Ishizuka, K Sakurai, A Yamada, K Matsubara, P Fons, K Iwata, ... Solar energy materials and solar cells 87 (1-4), 541-548, 2005 | 159 | 2005 |
| Band-gap modified Al-doped Zn1− xMgxO transparent conducting films deposited by pulsed laser deposition K Matsubara, H Tampo, H Shibata, A Yamada, P Fons, K Iwata, S Niki Applied physics letters 85 (8), 1374-1376, 2004 | 152 | 2004 |
| Gas source molecular beam epitaxy growth of GaN on C-, A-, R-and M-plane sapphire and silica glass substrates K Iwata, HA Asami, RKR Kuroiwa, SGS Gonda Japanese journal of applied physics 36 (6A), L661, 1997 | 126 | 1997 |
| Uniaxial locked growth of high-quality epitaxial ZnO films on (1120) α-Al2O3 P Fons, K Iwata, S Niki, A Yamada, K Matsubara, M Watanabe Journal of Crystal Growth 209 (2-3), 532-536, 2000 | 125 | 2000 |
| Growth of undoped ZnO films with improved electrical properties by radical source molecular beam epitaxy KNK Nakahara, TTT Tanabe, HTH Takasu, PFP Fons, KIK Iwata, ... Japanese Journal of Applied Physics 40 (1R), 250, 2001 | 122 | 2001 |
| High quality GaN growth on (0001) sapphire by ion-removed electron cyclotron resonance molecular beam epitaxy and first observation of (2× 2) and (4× 4) reflection high energy … K Iwata, H Asahi, SJ Yu, K Asami, H Fujita, MFM Fushida, SGS Gonda Japanese journal of applied physics 35 (3A), L289, 1996 | 116 | 1996 |
| Degenerate layers in epitaxial ZnO films grown on sapphire substrates H Tampo, A Yamada, P Fons, H Shibata, K Matsubara, K Iwata, S Niki, ... Applied Physics Letters 84 (22), 4412-4414, 2004 | 113 | 2004 |
| Improved external efficiency InGaN-based light-emitting diodes with transparent conductive Ga-doped ZnO as p-electrodes K Nakahara, K Tamura, M Sakai, D Nakagawa, N Ito, M Sonobe, ... Japanese journal of applied physics 43 (2A), L180, 2004 | 111 | 2004 |
| Growth of N-doped and Ga+ N-codoped ZnO films by radical source molecular beam epitaxy K Nakahara, H Takasu, P Fons, A Yamada, K Iwata, K Matsubara, ... Journal of crystal growth 237, 503-508, 2002 | 109 | 2002 |
| Optical properties of GaN layers grown on C-, A-, R-, and M-plane sapphire substrates by gas source molecular beam epitaxy S Tripathy, RK Soni, H Asahi, K Iwata, R Kuroiwa, K Asami, S Gonda Journal of applied physics 85 (12), 8386-8399, 1999 | 97 | 1999 |
| New III–V compound semiconductors TlInGaP for 0.9 µm to over 10 µm wavelength range laser diodes and their first successful growth H Asahi, K Yamamoto, K Iwata, SG Oe Japanese journal of applied physics 35 (7B), L876, 1996 | 92* | 1996 |
| Room-temperature deposition of Al-doped ZnO films by oxygen radical-assisted pulsed laser deposition K Matsubara, P Fons, K Iwata, A Yamada, S Niki Thin Solid Films 422 (1-2), 176-179, 2002 | 89 | 2002 |
| Improvement of Electrical Properties in ZnO Thin Films Grown by Radical Source (RS)‐MBE K Iwata, P Fons, S Niki, A Yamada, K Matsubara, K Nakahara, H Takasu physica status solidi (a) 180 (1), 287-292, 2000 | 77 | 2000 |
| Improvement of ZnO TCO film growth for photovoltaic devices by reactive plasma deposition (RPD) K Iwata, T Sakemi, A Yamada, P Fons, K Awai, T Yamamoto, S Shirakata, ... Thin Solid Films 480, 199-203, 2005 | 76 | 2005 |
