isabelle berbezier
isabelle berbezier
CNRS - IM2NP
Verified email at im2np.fr
TitleCited byYear
Growth and self-organization of SiGe nanostructures
JN Aqua, I Berbezier, L Favre, T Frisch, A Ronda
Physics Reports 522 (2), 59-189, 2013
1712013
SiGe nanostructures
I Berbezier, A Ronda
Surface Science Reports 64, 47-98, 2009
1502009
Resolution of (±)-menthol by immobilized Candida rugosa lipase on superparamagnetic nanoparticles
S Bai, Z Guo, W Liu, Y Sun
Food Chemistry 96 (1), 1-7, 2006
1212006
dot organization on substrates patterned by focused ion beam
A Karmous, A Cuenat, A Ronda, I Berbezier, S Atha, R Hull
Applied physics letters 85 (26), 6401-6403, 2004
1172004
A microstructural study of porous silicon
I Berbezier, A Halimaoui
Journal of applied physics 74 (9), 5421-5425, 1993
1011993
Surface electron‐diffraction patterns of β‐FeSi2 films epitaxially grown on silicon
JE Mahan, VL Thanh, J Chevrier, I Berbezier, J Derrien, RG Long
Journal of applied physics 74 (3), 1747-1761, 1993
871993
Formation and ordering of Ge nanocrystals on Si O 2
A Karmous, I Berbezier, A Ronda
Physical Review B 73 (7), 075323, 2006
782006
SiGe nanostructures: new insights into growth processes
I Berbezier, A Ronda, A Portavoce
Journal of Physics: Condensed Matter 14 (35), 8283, 2002
762002
Sub-micrometre luminescent porous silicon structures using lithographically patterned substrates
AG Nassiopoulos, S Grigoropoulos, L Canham, A Halimaoui, I Berbezier, ...
Thin Solid Films 255 (1-2), 329-333, 1995
741995
Porous silicon: material properties, visible photo-and electroluminescence
G Bomchil, A Halimaoui, I Sagnes, PA Badoz, I Berbezier, P Perret, ...
Applied surface science 65, 394-407, 1993
691993
Self-assembly and ordering mechanisms of Ge islands on prepatterned Si (001)
A Pascale, I Berbezier, A Ronda, PC Kelires
Physical Review B 77 (7), 075311, 2008
632008
Sb-surfactant-mediated growth of Si and Ge nanostructures
A Portavoce, I Berbezier, A Ronda
Physical Review B 69 (15), 155416, 2004
632004
Wafer scale formation of monocrystalline silicon-based mie resonators via silicon-on-insulator dewetting
M Abbarchi, M Naffouti, B Vial, A Benkouider, L Lermusiaux, L Favre, ...
ACS nano 8 (11), 11181-11190, 2014
622014
Selective and epitaxial deposition of β‐FeSi2 on silicon by rapid thermal processing‐chemical vapor deposition using a solid iron source
JL Regolini, F Trincat, I Berbezier, Y Shapira
Applied physics letters 60 (8), 956-958, 1992
571992
Ge dots self-assembling: Surfactant mediated growth of Ge on SiGe (118) stress-induced kinetic instabilities
I Berbezier, A Ronda, A Portavoce, N Motta
Applied Physics Letters 83 (23), 4833-4835, 2003
562003
diluted magnetic semiconductor epitaxially grown on Ge(001): Influence of nanoscopic clusters on the electronic and magnetic properties
P De Padova, JP Ayoub, I Berbezier, P Perfetti, C Quaresima, AM Testa, ...
Physical Review B 77 (4), 045203, 2008
532008
Defect-free Stranski-Krastanov growth of strained Si1-xGex layers on Si
D Dutartre, P Warren, F Chollet, F Gisbert, M Bérenguer, I Berbezier
Journal of crystal growth 142 (1-2), 78-86, 1994
481994
Silicide epilayers: recent developments and prospects for a Si-compatible technology
J Derrien, J Chevrier, V Le Thanh, TE Crumbaker, JY Natoli, I Berbezier
Applied surface science 70, 546-558, 1993
471993
Self-assembling of Ge dots on nanopatterns: experimental investigation of their formation, evolution and control
I Berbezier, A Ronda
Physical Review B 75 (19), 195407, 2007
432007
Low temperature silicon and Si1− xGex epitaxy by rapid themal chemical vapour deposition using hydrides
D Dutartre, P Warren, I Berbezier, P Perret
Thin Solid Films 222 (1-2), 52-56, 1992
431992
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