| Metal-insulator transition driven by vacancy ordering in GeSbTe phase change materials V Bragaglia, F Arciprete, W Zhang, AM Mio, E Zallo, K Perumal, ... Scientific reports 6 (1), 23843, 2016 | 128 | 2016 |
| Back-end, CMOS-compatible ferroelectric field-effect transistor for synaptic weights M Halter, L Bégon-Lours, V Bragaglia, M Sousa, BJ Offrein, S Abel, ... ACS applied materials & interfaces 12 (15), 17725-17732, 2020 | 101 | 2020 |
| Surface reconstruction-induced coincidence lattice formation between two-dimensionally bonded materials and a three-dimensionally bonded substrate JE Boschker, J Momand, V Bragaglia, R Wang, K Perumal, A Giussani, ... Nano letters 14 (6), 3534-3538, 2014 | 95 | 2014 |
| Revisiting the local structure in Ge-Sb-Te based chalcogenide superlattices B Casarin, A Caretta, J Momand, BJ Kooi, MA Verheijen, V Bragaglia, ... Scientific reports 6 (1), 22353, 2016 | 77 | 2016 |
| Intermixing during Epitaxial Growth of van der Waals Bonded Nominal GeTe/Sb2Te3 Superlattices R Wang, V Bragaglia, JE Boschker, R Calarco Crystal Growth & Design 16 (7), 3596-3601, 2016 | 68 | 2016 |
| Far-Infrared and Raman Spectroscopy Investigation of Phonon Modes in Amorphous and Crystalline Epitaxial GeTe-Sb2Te3 Alloys V Bragaglia, K Holldack, JE Boschker, F Arciprete, E Zallo, T Flissikowski, ... Scientific reports 6 (1), 28560, 2016 | 64 | 2016 |
| Chemical and structural arrangement of the trigonal phase in GeSbTe thin films AM Mio, SMS Privitera, V Bragaglia, F Arciprete, C Bongiorno, R Calarco, ... Nanotechnology 28 (6), 065706, 2017 | 54 | 2017 |
| Structural change upon annealing of amorphous GeSbTe grown on Si (111) V Bragaglia, B Jenichen, A Giussani, K Perumal, H Riechert, R Calarco Journal of Applied Physics 116 (5), 2014 | 49 | 2014 |
| Sub-nanometre resolution of atomic motion during electronic excitation in phase-change materials KV Mitrofanov, P Fons, K Makino, R Terashima, T Shimada, AV Kolobov, ... Scientific reports 6 (1), 20633, 2016 | 36 | 2016 |
| Filamentary TaOx/HfO2 ReRAM Devices for Neural Networks Training with Analog In‐Memory Computing T Stecconi, R Guido, L Berchialla, A La Porta, J Weiss, Y Popoff, M Halter, ... Advanced electronic materials 8 (10), 2200448, 2022 | 30 | 2022 |
| Mapping the band structure of GeSbTe phase change alloys around the Fermi level J Kellner, G Bihlmayer, M Liebmann, S Otto, C Pauly, JE Boschker, ... Communications Physics 1 (1), 5, 2018 | 29 | 2018 |
| Electrical and optical properties of epitaxial binary and ternary GeTe-Sb2Te3 alloys JE Boschker, X Lü, V Bragaglia, R Wang, HT Grahn, R Calarco Scientific Reports 8 (1), 5889, 2018 | 22 | 2018 |
| Role of interfaces on the stability and electrical properties of Ge2Sb2Te5 crystalline structures AM Mio, SMS Privitera, V Bragaglia, F Arciprete, S Cecchi, G Litrico, ... Scientific reports 7 (1), 2616, 2017 | 22 | 2017 |
| State dependence and temporal evolution of resistance in projected phase change memory B Kersting, V Ovuka, VP Jonnalagadda, M Sousa, V Bragaglia, SG Sarwat, ... Scientific reports 10 (1), 8248, 2020 | 20 | 2020 |
| Laser induced structural transformation in chalcogenide based superlattices E Zallo, R Wang, V Bragaglia, R Calarco Applied Physics Letters 108 (22), 2016 | 20 | 2016 |
| A multi-timescale synaptic weight based on ferroelectric hafnium zirconium oxide M Halter, L Bégon-Lours, M Sousa, Y Popoff, U Drechsler, V Bragaglia, ... Communications Materials 4 (1), 14, 2023 | 17 | 2023 |
| Deep learning acceleration in 14nm CMOS compatible ReRAM array: device, material and algorithm co-optimization N Gong, MJ Rasch, SC Seo, A Gasasira, P Solomon, V Bragaglia, ... 2022 International Electron Devices Meeting (IEDM), 33.7. 1-33.7. 4, 2022 | 16 | 2022 |
| Analog resistive switching in BEOL, ferroelectric synaptic weights L Bégon-Lours, M Halter, Y Popoff, Z Yu, DF Falcone, D Davila, ... IEEE Journal of the Electron Devices Society 9, 1275-1281, 2021 | 16 | 2021 |
| Epitaxial Ge2Sb2Te5 probed by single cycle THz pulses of coherent synchrotron radiation V Bragaglia, A Schnegg, R Calarco, K Holldack Applied Physics Letters 109 (14), 2016 | 11 | 2016 |
| Hints for a General Understanding of the Epitaxial Rules for van der Waals Epitaxy from Ge‐Sb‐Te Alloys F Arciprete, JE Boschker, S Cecchi, E Zallo, V Bragaglia, R Calarco Advanced Materials Interfaces 9 (9), 2101556, 2022 | 10 | 2022 |
