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Ganesh Hegde
Ganesh Hegde
Advanced Logic Lab, Samsung Semiconductor Inc
Verified email at ssi.samsung.com
Title
Cited by
Cited by
Year
Efficient and realistic device modeling from atomic detail to the nanoscale
JE Fonseca, T Kubis, M Povolotskyi, B Novakovic, A Ajoy, G Hegde, ...
Journal of Computational Electronics 12 (4), 592-600, 2013
1232013
Machine-learned approximations to density functional theory hamiltonians
G Hegde, RC Bowen
Scientific reports 7 (1), 42669, 2017
862017
III–V FET channel designs for high current densities and thin inversion layers
M Rodwell, W Frensley, S Steiger, E Chagarov, S Lee, H Ryu, Y Tan, ...
68th Device Research Conference, 149-152, 2010
452010
An environment-dependent semi-empirical tight binding model suitable for electron transport in bulk metals, metal alloys, metallic interfaces, and metallic nanostructures. I …
G Hegde, M Povolotskyi, T Kubis, T Boykin, G Klimeck
Journal of Applied Physics 115 (12), 2014
272014
An environment-dependent semi-empirical tight binding model suitable for electron transport in bulk metals, metal alloys, metallic interfaces, and metallic nanostructures. II …
G Hegde, M Povolotskyi, T Kubis, J Charles, G Klimeck
Journal Of Applied Physics 115 (12), 123704, 2014
272014
Lower limits of line resistance in nanocrystalline back end of line Cu interconnects
G Hegde, RC Bowen, MS Rodder
Applied Physics Letters 109 (193106), 2016
252016
Physical modeling of electronic devices/systems
G Klimeck, M Povolotskyi, TC Kubis, G Hegde
US Patent 9,858,365, 2018
192018
Structure and method to achieve compressively strained Si NS
JA Kittl, G Hegde, RC Bowen, BJ Obradovic, MS Rodder
US Patent 9,831,323, 2017
192017
Effect of realistic metal electronic structure on the lower limit of contact resistivity of epitaxial metal-semiconductor contacts
G Hegde, R Chris Bowen
Applied Physics Letters 105 (5), 2014
192014
III-V MOSFETs: Scaling laws, scaling limits, fabrication processes
MJW Rodwell, U Singisetti, M Wistey, GJ Burek, A Carter, A Baraskar, ...
2010 22nd International Conference on Indium Phosphide and Related Materials …, 2010
172010
Scaling effect on specific contact resistivity in nano-scale metal-semiconductor contacts
SH Park, N Kharche, D Basu, Z Jiang, SK Nayak, CE Weber, G Hegde, ...
71st Device Research Conference, 125-126, 2013
162013
Low resistivity damascene interconnect
G Hegde, MS Rodder, JA Kittl, RC Bowen
US Patent 9,613,907, 2017
72017
Role of surface orientation on atomic layer deposited Al2O3/GaAs interface structure and Fermi level pinning: A density functional theory study
G Hegde, G Klimeck, A Strachan
Applied Physics Letters 99 (9), 2011
72011
Metal oxysilicate diffusion barriers for damascene metallization with low RC delays and methods for forming the same
G Hegde, M Rodder, R Sengupta, C Bowen
US Patent 9,728,502, 2017
62017
Fabricating metal source-drain stressor in a MOS device channel
JA Kittl, G Hegde, MS Rodder
US Patent 9,634,140, 2017
62017
Generative structure-property inverse computational co-design of materials
G Hegde, HS Simka
US Patent 11,537,898, 2022
52022
Structure and method to achieve large strain in NS without addition of stack-generated defects
JA Kittl, G Hegde, RC Bowen, MS Rodder
US Patent 10,283,638, 2019
52019
Is electron transport in nanocrystalline Cu interconnects surface dominated or grain boundary dominated?
G Hegde, RC Bowen, MS Rodder
2016 IEEE International Interconnect Technology Conference/Advanced …, 2016
52016
The nanoelectronic modeling tool nemo 5: Capabilities, validation, and application to sb-heterostructures
S Steiger, M Povolotskyi, HH Park, T Kubis, G Hegde, B Haley, M Rodwell, ...
69th Device Research Conference, 23-26, 2011
52011
On the feasibility of ab initio electronic structure calculations for Cu using a single s orbital basis
G Hegde, RC Bowen
AIP Advances 5 (10), 2015
42015
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Articles 1–20