Designing III–V multijunction solar cells on silicon JP Connolly, D Mencaraglia, C Renard, D Bouchier Progress in Photovoltaics: Research and Applications 22 (7), 810-820, 2014 | 122 | 2014 |
Room temperature operation of InAs∕ AlSb quantum cascade lasers R Teissier, D Barate, A Vicet, C Alibert, AN Baranov, X Marcadet, ... Applied physics letters 85 (2), 167-169, 2004 | 121 | 2004 |
Novel heterostructured Ge nanowires based on polytype transformation L Vincent, G Patriarche, G Hallais, C Renard, C Gardès, D Troadec, ... Nano letters 14 (8), 4828-4836, 2014 | 82 | 2014 |
Interface band gap engineering in InAsSb photodiodes M Carras, JL Reverchon, G Marre, C Renard, B Vinter, X Marcadet, ... Applied Physics Letters 87 (10), 2005 | 50 | 2005 |
Crystalline, phononic, and electronic properties of heterostructured polytypic Ge nanowires by Raman spectroscopy C Fasolato, M De Luca, D Djomani, L Vincent, C Renard, G Di Iorio, ... Nano letters 18 (11), 7075-7084, 2018 | 44 | 2018 |
Morphology and composition of Au catalysts on Ge (111) obtained by thermal dewetting S Hajjar, G Garreau, L Josien, JL Bubendorff, D Berling, A Mehdaoui, ... Physical Review B—Condensed Matter and Materials Physics 84 (12), 125325, 2011 | 37 | 2011 |
Shear-driven phase transformation in silicon nanowires L Vincent, D Djomani, M Fakfakh, C Renard, B Belier, D Bouchier, ... Nanotechnology 29 (12), 125601, 2018 | 36 | 2018 |
Powering aircraft with 100% sustainable aviation fuel reduces ice crystals in contrails RS Märkl, C Voigt, D Sauer, RK Dischl, S Kaufmann, T Harlaß, V Hahn, ... Atmospheric Chemistry and Physics 24 (6), 3813-3837, 2024 | 33 | 2024 |
Indium surface segregation in AlSb and GaSb C Renard, X Marcadet, J Massies, I Prévot, R Bisaro, P Galtier Journal of crystal growth 259 (1-2), 69-78, 2003 | 32 | 2003 |
Epitaxial growth of Ge on a thin SiO2 layer by ultrahigh vacuum chemical vapor deposition M Halbwax, C Renard, D Cammilleri, V Yam, F Fossard, D Bouchier, ... Journal of crystal Growth 308 (1), 26-29, 2007 | 26 | 2007 |
InAs∕ AlAsSb based quantum cascade lasers X Marcadet, C Renard, M Carras, M Garcia, J Massies Applied Physics Letters 91 (16), 2007 | 25 | 2007 |
Coupled technique to produce two-dimensional superlattices of nanoparticles C Renard, C Ricolleau, E Fort, S Besson, T Gacoin, JP Boilot Applied physics letters 80 (2), 300-302, 2002 | 25 | 2002 |
Dislocation and antiphase domain free microscale GaAs crystals grown on SiO2 from (001) Si nano-areas C Renard, N Cherkasin, A Jaffré, L Vincent, A Michel, T Molière, ... Applied Physics Letters 102 (19), 2013 | 23 | 2013 |
Low temperature activation of Au/Ti getter film for application to wafer-level vacuum packaging M Wu, J Moulin, S Lani, G Hallais, C Renard, A Bosseboeuf Japanese Journal of Applied Physics 54 (3), 030220, 2015 | 22 | 2015 |
High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed C Renard, T Molière, N Cherkashin, J Alvarez, L Vincent, A Jaffré, ... Scientific Reports 6 (1), 25328, 2016 | 21 | 2016 |
Lateral epitaxial growth of germanium on silicon oxide VD Cammilleri, V Yam, F Fossard, C Renard, D Bouchier, PF Fazzini, ... Applied Physics Letters 93 (4), 2008 | 20 | 2008 |
Faceting mechanisms of Si nanowires and gold spreading L Vincent, R Boukhicha, C Gardès, C Renard, V Yam, F Fossard, ... Journal of Materials Science 47, 1609-1613, 2012 | 18 | 2012 |
Design and fabrication of infrared detectors based on lattice-matched InAs0. 91Sb0. 09 on GaSb JL Reverchon, M Carras, G Marre, C Renard, V Berger, B Vinter, ... Physica E: Low-dimensional Systems and Nanostructures 20 (3-4), 519-522, 2004 | 18 | 2004 |
Effect of Environment on Activation and Sorption of Getter Alloys and Multilayers for Hybrid Wafer-level Vacuum Packaging. A Bosseboeuf, S Lemettre, M Wu, J Moulin, P Coste, C Bessouet, ... Sensors & Materials 31, 2019 | 15 | 2019 |
Material engineering for InAs/GaSb/AlSb quantum cascade light emitting devices X Marcadet, C Becker, M Garcia, I Prévot, C Renard, C Sirtori Journal of crystal growth 251 (1-4), 723-728, 2003 | 15 | 2003 |