| P-type β-gallium oxide: A new perspective for power and optoelectronic devices YD E Chikoidzea, A Fellous, A Perez-Tomas, G Sauthier, T Tchelidze, C Ton ... Materials Today Physics, 2017 | 223 | 2017 |
| Surface transfer doping of diamond by MoO3: A combined spectroscopic and Hall measurement study SAO Russell, L Cao, D Qi, A Tallaire, KG Crawford, ATS Wee, DAJ Moran Applied Physics Letters 103 (20), 2013 | 115 | 2013 |
| Hydrogen-terminated diamond field-effect transistors with cutoff frequency of 53 GHz SAO Russell, S Sharabi, A Tallaire, DAJ Moran IEEE Electron Device Letters 33 (10), 1471-1473, 2012 | 105 | 2012 |
| Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET With Reduced Self Heating SAO Russell, A Pérez-Tomás, CF McConville, CA Fisher, DP Hamilton, ... IEEE Journal of the Electron Devices Society 5 (4), 256-261, 2017 | 71 | 2017 |
| RF operation of hydrogen-terminated diamond field effect transistors: a comparative study S Russell, S Sharabi, A Tallaire, DAJ Moran IEEE Transactions on Electron Devices 62 (3), 751-756, 2015 | 54 | 2015 |
| Scaling of hydrogen-terminated diamond FETs to sub-100-nm gate dimensions DAJ Moran, OJL Fox, H McLelland, S Russell, PW May IEEE Electron Device Letters 32 (5), 599-601, 2011 | 54 | 2011 |
| High temperature electrical and thermal aging performance and application considerations for SiC power DMOSFETs DP Hamilton, MR Jennings, A Pérez-Tomás, SAO Russell, SA Hindmarsh, ... IEEE Transactions on Power Electronics 32 (10), 7967-7979, 2016 | 30 | 2016 |
| Giant bulk photovoltaic effect in solar cell architectures with ultra-wide bandgap Ga2O3 transparent conducting electrodes A Pérez-Tomás, E Chikoidze, Y Dumont, MR Jennings, SO Russell, ... Materials Today Energy 14, 100350, 2019 | 27 | 2019 |
| High-Temperature (1200–1400° C) Dry Oxidation of 3C-SiC on Silicon YK Sharma, F Li, MR Jennings, CA Fisher, A Pérez-Tomás, S Thomas, ... Journal of Electronic Materials 44 (11), 4167-4174, 2015 | 20 | 2015 |
| Wide and ultra-wide bandgap oxides: where paradigm-shift photovoltaics meets transparent power electronics A Pérez-Tomás, E Chikoidze, MR Jennings, SAO Russell, FH Teherani, ... Proceedings of SPIE 10533, 2018 | 17 | 2018 |
| High Temperature Nitridation of 4H-SiC MOSFETs H Rong, YK Sharma, TX Dai, F Li, MR Jennings, SAO Russell, DM Martin, ... Materials Science Forum 858, 623-626, 2016 | 13 | 2016 |
| Investigating the properties of interfacial layers in planar Schottky contacts on hydrogen-terminated diamond through direct current/small-signal characterization and radial … F Cappelluti, G Ghione, SAO Russell, DAJ Moran, C Verona, E Limiti Applied Physics Letters 106 (10), 2015 | 11 | 2015 |
| Dielectrics in Silicon Carbide Devices: Technology and Application A O'Neill, O Vavasour, S Russell, F Arith, J Urresti, P Gammon Advancing Silicon Carbide Electronics Technology II: Core Technologies of …, 2020 | 7 | 2020 |
| Improved Channel Mobility by Oxide Nitridation for N-Channel MOSFET on 3C-SiC (100)/Si F Li, YK Sharma, MR Jennings, A Pérez-Tomás, VA Shah, H Rong, ... Materials Science Forum 858, 667-670, 2016 | 6 | 2016 |
| High frequency hydrogen-terminated diamond field effect transistor technology DAJ Moran, SAO Russell, S Sharabi, A Tallaire 2012 12th IEEE International Conference on Nanotechnology (IEEE-NANO), 1-5, 2012 | 6 | 2012 |
| 4H-SiC Trench Structure Fabrication with Al2O3 Etching Mask TX Dai, Z Mohammadi, SAO Russell, CA Fisher, MR Jennings, PA Mawby Materials Science Forum 897, 371-374, 2017 | 5 | 2017 |
| Physical Characterisation of 3C-SiC (001)/SiO2 Interface Using XPS F Li, O Vavasour, M Walker, DM Martin, YK Sharma, SAO Russell, ... Materials Science Forum 897, 151-154, 2017 | 4 | 2017 |
| Functional Oxide as an Extreme High-k Dielectric Towards 4H-SiC MOSFET Incorporation SAO Russell, MR Jennings, T Dai, F Li, DP Hamilton, CA Fisher, ... Materials Science Forum 897, 155-158, 2017 | 3 | 2017 |
| Demonstrating the instability of SiC ohmic contacts and drain terminal metallization schemes aged at 300° C DP Hamilton, SA Hindmarsh, F Li, MR Jennings, SAO Russell, ... Materials Science Forum 897, 387-390, 2017 | 2 | 2017 |
| Ohmic Contact Reliability of Commercially Available SiC MOSFETs Isothermally Aged for Long Periods at 300° C in Air D Hamilton, S Hindmarsh, S York, D Walker, SAO Russell, MR Jennings, ... Materials Science Forum 858, 557-560, 2016 | 1 | 2016 |
Mike JenningsProfessor, Swansea UniversityVerified email at swansea.ac.uk
