Stephen A. O. Russell
Stephen A. O. Russell
TechInsights, Inc.
Verified email at warwick.ac.uk - Homepage
Title
Cited by
Cited by
Year
P-type β-gallium oxide: A new perspective for power and optoelectronic devices
YD E Chikoidzea, A Fellous, A Perez-Tomas, G Sauthier, T Tchelidze, C Ton ...
Materials Today Physics, 2017
1062017
Surface transfer doping of diamond by MoO3: A combined spectroscopic and Hall measurement study
SAO Russell, L Cao, D Qi, A Tallaire, KG Crawford, ATS Wee, DAJ Moran
Applied Physics Letters 103 (20), 202112, 2013
812013
Hydrogen-terminated diamond field-effect transistors with cutoff frequency of 53 GHz
SAO Russell, S Sharabi, A Tallaire, DAJ Moran
IEEE Electron Device Letters 33 (10), 1471-1473, 2012
802012
Scaling of hydrogen-terminated diamond FETs to sub-100-nm gate dimensions
DAJ Moran, OJL Fox, H McLelland, S Russell, PW May
IEEE Electron Device Letters 32 (5), 599-601, 2011
472011
RF operation of hydrogen-terminated diamond field effect transistors: a comparative study
S Russell, S Sharabi, A Tallaire, DAJ Moran
IEEE Transactions on Electron Devices 62 (3), 751-756, 2015
422015
Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET With Reduced Self Heating
SAO Russell, A Pérez-Tomás, CF McConville, CA Fisher, DP Hamilton, ...
IEEE Journal of the Electron Devices Society 5 (4), 256-261, 2017
302017
High temperature electrical and thermal aging performance and application considerations for SiC power DMOSFETs
DP Hamilton, MR Jennings, A Pérez-Tomás, SAO Russell, SA Hindmarsh, ...
IEEE Transactions on Power Electronics 32 (10), 7967-7979, 2016
212016
High-Temperature (1200–1400° C) Dry Oxidation of 3C-SiC on Silicon
YK Sharma, F Li, MR Jennings, CA Fisher, A Pérez-Tomás, S Thomas, ...
Journal of Electronic Materials 44 (11), 4167-4174, 2015
122015
Wide and ultra-wide bandgap oxides: where paradigm-shift photovoltaics meets transparent power electronics
A Pérez-Tomás, E Chikoidze, MR Jennings, SAO Russell, FH Teherani, ...
Proceedings of SPIE 10533, 2018
102018
Investigating the properties of interfacial layers in planar Schottky contacts on hydrogen-terminated diamond through direct current/small-signal characterization and radial …
F Cappelluti, G Ghione, SAO Russell, DAJ Moran, C Verona, E Limiti
Applied Physics Letters 106 (10), 103504, 2015
102015
High Temperature Nitridation of 4H-SiC MOSFETs
H Rong, YK Sharma, TX Dai, F Li, MR Jennings, SAO Russell, DM Martin, ...
Materials Science Forum 858, 623-626, 2016
92016
Giant bulk photovoltaic effect in solar cell architectures with ultra-wide bandgap Ga2O3 transparent conducting electrodes
A Pérez-Tomás, E Chikoidze, Y Dumont, MR Jennings, SO Russell, ...
Materials Today Energy 14, 100350, 2019
52019
High frequency hydrogen-terminated diamond field effect transistor technology
DAJ Moran, SAO Russell, S Sharabi, A Tallaire
2012 12th IEEE International Conference on Nanotechnology (IEEE-NANO), 1-5, 2012
52012
4H-SiC Trench Structure Fabrication with Al2O3 Etching Mask
TX Dai, Z Mohammadi, SAO Russell, CA Fisher, MR Jennings, PA Mawby
Materials Science Forum 897, 371-374, 2017
42017
Improved Channel Mobility by Oxide Nitridation for N-Channel MOSFET on 3C-SiC (100)/Si
F Li, YK Sharma, MR Jennings, A Pérez-Tomás, VA Shah, H Rong, ...
Materials Science Forum 858, 667-670, 2016
42016
Physical Characterisation of 3C-SiC (001)/SiO2 Interface Using XPS
F Li, O Vavasour, M Walker, DM Martin, YK Sharma, SAO Russell, ...
Materials Science Forum 897, 151-154, 2017
32017
Dielectrics in Silicon Carbide Devices: Technology and Application
A O'Neill, O Vavasour, S Russell, F Arith, J Urresti, P Gammon
Advancing Silicon Carbide Electronics Technology II: Core Technologies of …, 2020
22020
Functional Oxide as an Extreme High-k Dielectric Towards 4H-SiC MOSFET Incorporation
SAO Russell, MR Jennings, T Dai, F Li, DP Hamilton, CA Fisher, ...
Materials Science Forum 897, 155-158, 2017
22017
Demonstrating the instability of SiC ohmic contacts and drain terminal metallization schemes aged at 300° C
DP Hamilton, SA Hindmarsh, F Li, MR Jennings, SAO Russell, ...
Materials Science Forum 897, 387-390, 2017
22017
Ohmic Contact Reliability of Commercially Available SiC MOSFETs Isothermally Aged for Long Periods at 300° C in Air
D Hamilton, S Hindmarsh, S York, D Walker, SAO Russell, MR Jennings, ...
Materials Science Forum 858, 557-560, 2016
12016
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