Robert F. Davis
Robert F. Davis
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TitleCited byYear
Strain-related phenomena in GaN thin films
C Kisielowski, J Krüger, S Ruvimov, T Suski, JW Ager III, E Jones, ...
Physical review B 54 (24), 17745, 1996
Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
OH Nam, MD Bremser, TS Zheleva, RF Davis
Applied Physics Letters 71 (18), 2638-2640, 1997
Dislocation density reduction via lateral epitaxy in selectively grown GaN structures
TS Zheleva, OH Nam, MD Bremser, RF Davis
Applied physics letters 71 (17), 2472-2474, 1997
Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
RF Davis, CH Carter Jr, CE Hunter
US Patent App. 07/594,856, 1995
III-V nitrides for electronic and optoelectronic applications
RF Davis
Proceedings of the IEEE 79 (5), 702-712, 1991
Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide
RF Davis, G Kelner, M Shur, JW Palmour, JA Edmond
Proceedings of the IEEE 79 (5), 677-701, 1991
A critical review of ohmic and rectifying contacts for silicon carbide
LM Porter, RF Davis
Materials Science and Engineering: B 34 (2-3), 83-105, 1995
Growth of cubic phase gallium nitride by modified molecular‐beam epitaxy
MJ Paisley, Z Sitar, JB Posthill, RF Davis
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 7 (3 …, 1989
Gold Schottky contacts on oxygen plasma-treated, n-type
BJ Coppa, RF Davis, RJ Nemanich
Applied Physics Letters 82 (3), 400-402, 2003
Carbon ARC Generation of C60
RE Haufler, Y Chai, LPF Chibante, J Conceicao, C Jin, LS Wang, ...
MRS Online Proceedings Library Archive 206, 1990
Epitaxial Growth and Characterization of β‐SiC Thin Films
P Liaw, RF Davis
Journal of the Electrochemical Society 132 (3), 642-648, 1985
Cleaning of AlN and GaN surfaces
SW King, JP Barnak, MD Bremser, KM Tracy, C Ronning, RF Davis, ...
Journal of Applied Physics 84 (9), 5248-5260, 1998
GaN thin films deposited via organometallic vapor phase epitaxy on α (6H)–SiC (0001) using high‐temperature monocrystalline AlN buffer layers
T Warren Weeks Jr, MD Bremser, KS Ailey, E Carlson, WG Perry, ...
Applied physics letters 67 (3), 401-403, 1995
Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer
RF Davis, OH Nam, T Zheleva, MD Bremser
US Patent 6,051,849, 2000
Diamond films and coatings
RF Davis
Noyes Publications(USA), 1993,, 435, 1993
Observation of a negative electron affinity for heteroepitaxial AlN on α (6H)‐SiC (0001)
MC Benjamin, C Wang, RF Davis, RJ Nemanich
Applied physics letters 64 (24), 3288-3290, 1994
Chemical vapor deposition and characterization of 6H‐SiC thin films on off‐axis 6H‐SiC substrates
HS Kong, JT Glass, RF Davis
Journal of applied physics 64 (5), 2672-2679, 1988
Pendeoepitaxy of gallium nitride thin films
K Linthicum, T Gehrke, D Thomson, E Carlson, P Rajagopal, T Smith, ...
Applied physics letters 75 (2), 196-198, 1999
Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates
KJ Linthicum, T Gehrke, DB Thomson, EP Carlson, P Rajagopal, ...
US Patent 6,177,688, 2001
Phase evolution in boron nitride thin films
DJ Kester, KS Ailey, RF Davis, KL More
Journal of materials research 8 (6), 1213-1216, 1993
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