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Robert F. Davis
Robert F. Davis
Verified email at andrew.cmu.edu
Title
Cited by
Cited by
Year
Strain-related phenomena in GaN thin films
C Kisielowski, J Krüger, S Ruvimov, T Suski, JW Ager III, E Jones, ...
Physical review B 54 (24), 17745, 1996
10211996
Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
OH Nam, MD Bremser, TS Zheleva, RF Davis
Applied Physics Letters 71 (18), 2638-2640, 1997
8621997
Dislocation density reduction via lateral epitaxy in selectively grown GaN structures
TS Zheleva, OH Nam, MD Bremser, RF Davis
Applied Physics Letters 71 (17), 2472-2474, 1997
6911997
III-V nitrides for electronic and optoelectronic applications
RF Davis
Proceedings of the IEEE 79 (5), 702-712, 1991
6211991
Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
RF Davis, CH Carter Jr, CE Hunter
US Patent App. 07/594,856, 1995
611*1995
Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide
RF Davis, G Kelner, M Shur, JW Palmour, JA Edmond
Proceedings of the IEEE 79 (5), 677-701, 1991
5831991
A critical review of ohmic and rectifying contacts for silicon carbide
LM Porter, RF Davis
Materials Science and Engineering: B 34 (2-3), 83-105, 1995
5761995
Growth of cubic phase gallium nitride by modified molecular‐beam epitaxy
MJ Paisley, Z Sitar, JB Posthill, RF Davis
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 7 (3 …, 1989
5051989
Gold Schottky contacts on oxygen plasma-treated, n-type
BJ Coppa, RF Davis, RJ Nemanich
Applied Physics Letters 82 (3), 400-402, 2003
4722003
Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates
KJ Linthicum, T Gehrke, DB Thomson, EP Carlson, P Rajagopal, ...
US Patent 6,177,688, 2001
4402001
Cleaning of AlN and GaN surfaces
SW King, JP Barnak, MD Bremser, KM Tracy, C Ronning, RF Davis, ...
Journal of applied physics 84 (9), 5248-5260, 1998
4041998
Diamond films and coatings: development, properties, and applications
RF Davis
(No Title), 1993
3411993
Epitaxial Growth and Characterization of β‐SiC Thin Films
P Liaw, RF Davis
Journal of the Electrochemical Society 132 (3), 642, 1985
3151985
GaN thin films deposited via organometallic vapor phase epitaxy on A (6H)-SiC (0001) using high-temperature monocrystalline AlN buffer layers
TW Weeks Jr, MD Bremser, KS Ailey, E Carlson, WG Perry, RF Davis
Applied physics letters 67 (3), 401-403, 1995
3101995
Martensitic transformations in Ti-Mo alloys
R Davis, HM Flower, DRF West
Journal of Materials Science 14, 712-722, 1979
3101979
Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer
RF Davis, OH Nam, T Zheleva, MD Bremser
US Patent 6,051,849, 2000
2952000
Chemical vapor deposition and characterization of 6H‐SiC thin films on off‐axis 6H‐SiC substrates
HS Kong, JT Glass, RF Davis
Journal of applied physics 64 (5), 2672-2679, 1988
2951988
Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide
RF Davis, Z Sitar, BE Williams, HS Kong, HJ Kim, JW Palmour, ...
Materials Science and Engineering: B 1 (1), 77-104, 1988
2841988
Structural TEM study of nonpolar -plane gallium nitride grown on -SiC by organometallic vapor phase epitaxy
DN Zakharov, Z Liliental-Weber, B Wagner, ZJ Reitmeier, EA Preble, ...
Physical Review B 71 (23), 235334, 2005
2702005
Phase evolution in boron nitride thin films
DJ Kester, KS Ailey, RF Davis, KL More
Journal of materials research 8 (6), 1213-1216, 1993
2651993
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