S D Brotherton
S D Brotherton
Unknown affiliation
Verified email at tiscali.co.uk
TitleCited byYear
Defect production and lifetime control in electron and γ‐irradiated silicon
SD Brotherton, P Bradley
Journal of Applied Physics 53 (8), 5720-5732, 1982
3781982
Polycrystalline silicon thin film transistors
SD Brotherton
Semiconductor science and technology 10 (6), 721, 1995
3451995
Excimer-laser-annealed poly-Si thin-film transistors
SD Brotherton, DJ McCulloch, JB Clegg, JP Gowers
IEEE Transactions on Electron Devices 40 (2), 407-413, 1993
2131993
Influence of melt depth in laser crystallized poly-Si thin film transistors
SD Brotherton, DJ McCulloch, JP Gowers, JR Ayres, MJ Trainor
Journal of applied physics 82 (8), 4086-4094, 1997
1251997
Deep levels of copper in silicon
SD Brotherton, JR Ayres, A Gill, HW Van Kesteren, F Greidanus
Journal of applied physics 62 (5), 1826-1832, 1987
1231987
Electrical properties of platinum in silicon
SD Brotherton, P Bradley, J Bicknell
Journal of Applied Physics 50 (5), 3396-3403, 1979
1111979
Iron and the iron‐boron complex in silicon
SD Brotherton, P Bradley, A Gill
Journal of applied physics 57 (6), 1941-1943, 1985
1101985
Introduction to Thin Film Transistors
SD Brotherton
Introduction to Thin Film Transistors, 2013
98*2013
Laser crystallised poly-Si TFTs for AMLCDs
SD Brotherton, JR Ayres, MJ Edwards, CA Fisher, C Glaister, JP Gowers, ...
Thin Solid Films 337 (1-2), 188-195, 1999
951999
Analysis of drain field and hot carrier stability of poly-Si thin film transistors
JR Ayres, SD Brotherton, DJ McCulloch, MJ Trainor
Japanese journal of applied physics 37 (4R), 1801, 1998
831998
Electron and hole capture at au and pt centers in silicon
SD Brotherton, JE Lowther
Physical Review Letters 44 (9), 606, 1980
821980
The electrical properties of sulphur in silicon
SD Brotherton, MJ King, GJ Parker
Journal of Applied Physics 52 (7), 4649-4658, 1981
811981
Surface roughness effects in laser crystallized polycrystalline silicon
DJ McCulloch, SD Brotherton
Applied physics letters 66 (16), 2060-2062, 1995
801995
The electron capture cross section and energy level of the gold acceptor center in silicon
SD Brotherton, J Bicknell
Journal of Applied Physics 49 (2), 667-671, 1978
781978
Defects and leakage currents in BF2‐implanted preamorphized silicon
SD Brotherton, JP Gowers, ND Young, JB Clegg, JR Ayres
Journal of Applied Physics 60 (10), 3567-3575, 1986
761986
Modeling of laser-annealed polysilicon TFT characteristics
GA Armstrong, S Uppal, SD Brotherton, JR Ayres
IEEE Electron Device Letters 18 (7), 315-318, 1997
731997
Characterisation of poly-Si TFTs in directionally solidified SLS Si
JSI SD Brotherton, MA Crowder, AB Limanov, B Turk
Asia Display/IDW '01, 387, 2001
71*2001
Differentiation of effects due to grain and grain boundary traps in laser annealed poly-Si thin film transistors
GA Armstrong, S Uppal, SD Brotherton, JR Ayres
Japanese journal of applied physics 37 (4R), 1721, 1998
631998
Surface charge and stress in the Si/SiO2 system
SD Brotherton, TG Read, DR Lamb, AFW Willoughby
Solid-State Electronics 16 (12), 1367-1375, 1973
631973
Electrical observation of the Au‐Fe complex in silicon
SD Brotherton, P Bradley, A Gill, ER Weber
Journal of applied physics 55 (4), 952-956, 1984
621984
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