| Polycrystalline silicon thin film transistors SD Brotherton Semiconductor science and technology 10 (6), 721, 1995 | 426 | 1995 |
| Defect production and lifetime control in electron and γ‐irradiated silicon SD Brotherton, P Bradley Journal of Applied Physics 53 (8), 5720-5732, 1982 | 426 | 1982 |
| Excimer-laser-annealed poly-Si thin-film transistors SD Brotherton, DJ McCulloch, JB Clegg, JP Gowers IEEE Transactions on Electron Devices 40 (2), 407-413, 1993 | 248 | 1993 |
| Introduction to Thin Film Transistors SD Brotherton Introduction to Thin Film Transistors, 2013 | 209* | 2013 |
| Deep levels of copper in silicon SD Brotherton, JR Ayres, A Gill, HW Van Kesteren, F Greidanus Journal of applied physics 62 (5), 1826-1832, 1987 | 146 | 1987 |
| Influence of melt depth in laser crystallized poly-Si thin film transistors SD Brotherton, DJ McCulloch, JP Gowers, JR Ayres, MJ Trainor Journal of applied physics 82 (8), 4086-4094, 1997 | 140 | 1997 |
| Iron and the iron‐boron complex in silicon SD Brotherton, P Bradley, A Gill Journal of applied physics 57 (6), 1941-1943, 1985 | 131 | 1985 |
| Electrical properties of platinum in silicon SD Brotherton, P Bradley, J Bicknell Journal of Applied Physics 50 (5), 3396-3403, 1979 | 117 | 1979 |
| Laser crystallised poly-Si TFTs for AMLCDs SD Brotherton, JR Ayres, MJ Edwards, CA Fisher, C Glaister, JP Gowers, ... Thin Solid Films 337 (1-2), 188-195, 1999 | 106 | 1999 |
| Defects and leakage currents in BF2‐implanted preamorphized silicon SD Brotherton, JP Gowers, ND Young, JB Clegg, JR Ayres Journal of Applied Physics 60 (10), 3567-3575, 1986 | 95 | 1986 |
| Analysis of drain field and hot carrier stability of poly-Si thin film transistors JR Ayres, SD Brotherton, DJ McCulloch, MJ Trainor Japanese journal of applied physics 37 (4R), 1801, 1998 | 93 | 1998 |
| The electrical properties of sulphur in silicon SD Brotherton, MJ King, GJ Parker Journal of Applied Physics 52 (7), 4649-4658, 1981 | 92 | 1981 |
| Surface roughness effects in laser crystallized polycrystalline silicon DJ McCulloch, SD Brotherton Applied physics letters 66 (16), 2060-2062, 1995 | 88 | 1995 |
| The electron capture cross section and energy level of the gold acceptor center in silicon SD Brotherton, J Bicknell Journal of Applied Physics 49 (2), 667-671, 1978 | 87 | 1978 |
| Electron and hole capture at Au and Pt centers in silicon SD Brotherton, JE Lowther Physical Review Letters 44 (9), 606, 1980 | 86 | 1980 |
| Characterisation of poly-Si TFTs in directionally solidified SLS Si JSI SD Brotherton, MA Crowder, AB Limanov, B Turk Asia Display/IDW '01, 387, 2001 | 82* | 2001 |
| Characterisation of low temperature poly-Si thin film transistors SD Brotherton, JR Ayres, ND Young Solid-state electronics 34 (7), 671-679, 1991 | 78 | 1991 |
| Modeling of laser-annealed polysilicon TFT characteristics GA Armstrong, S Uppal, SD Brotherton, JR Ayres IEEE Electron Device Letters 18 (7), 315-318, 1997 | 76 | 1997 |
| Electrical observation of the Au‐Fe complex in silicon SD Brotherton, P Bradley, A Gill, ER Weber Journal of applied physics 55 (4), 952-956, 1984 | 76 | 1984 |
| Differentiation of effects due to grain and grain boundary traps in laser annealed poly-Si thin film transistors GA Armstrong, S Uppal, SD Brotherton, JR Ayres Japanese journal of applied physics 37 (4R), 1721, 1998 | 67 | 1998 |
