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Matthias Bauer
Matthias Bauer
Mattson Technology
Verified email at mattson.com
Title
Cited by
Cited by
Year
Cyclical Epitaxial Deposition And Etch
M Bauer, SG Thomas
US Patent 8,367,528, 2013
5562013
Selective epitaxial formation of semiconductor films
M Bauer, KD Weeks
US Patent 8,278,176, 2012
5072012
High throughput cyclical epitaxial deposition and etch process
M Bauer
US Patent 8,809,170, 2014
4562014
Apparatus and method for depositing silicon germanium films
P Tomasini, M Bauer, N Cody
US Patent 2007/0,155,138, 2007
4412007
Inhibitors for selective deposition of silicon containing films
M Bauer, P Tomasini
US Patent 7,939,447, 2011
4312011
Deposition of silicon germanium on silicon-on-insulator structures and bulk substrates
M Bauer
US Patent 7,208,354, 2007
3872007
Methods of depositing electrically active doped crystalline Si-containing films
M Bauer
US Patent 7,687,383, 2010
3492010
Selective deposition of silicon-containing films
M Bauer, C Arena, R Bertram, P Tomasini, N Cody, P Brabant, J Italiano, ...
US Patent 7,816,236, 2006
128*2006
New virtual substrate concept for vertical MOS transistors
E Kasper, K Lyutovich, M Bauer, M Oehme
Thin Solid Films 336 (1-2), 319-322, 1998
1281998
Epitaxial deposition of doped semiconductor materials
M Bauer
US Patent 7,863,163, 2011
1212011
Strained n-Channel FinFETs Featuring In Situ Doped Silicon–Carbon Si1-yCy Source and Drain Stressors With High Carbon Content
TY Liow, KM Tan, D Weeks, RTP Lee, M Zhu, KM Hoe, CH Tung, M Bauer, ...
IEEE Transactions on Electron Devices 55 (9), 2475-2483, 2008
93*2008
Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition
M Bauer, KD Weeks, P Tomasini, N Cody
US Patent 7,648,690, 2010
772010
Highly tensile strained silicon–carbon alloys epitaxially grown into recessed source drain areas of NMOS devices
M Bauer, V Machkaoutsan, C Arena
Semiconductor Science and Technology 22 (1), S183 - S187, 2006
722006
Relaxed SiGe buffers with thicknesses below 0.1 μm
M Bauer, K Lyutovich, M Oehme, E Kasper, HJ Herzog, F Ernst
Thin Solid Films 369 (1-2), 152-156, 2000
722000
Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition
M Bauer, KD Weeks, P Tomasini, N Cody
US Patent 7,438,760, 2008
692008
Epitaxial semiconductor deposition methods and structures
PD Brabant, JP Italiano, CJ Arena, P Tomasini, I Raaijmakers, M Bauer
US Patent 7,402,504, 2008
682008
Epitaxial semiconductor deposition methods and structures
PD Brabant, JP Italiano, CJ Arena, P Tomasini, I Raaijmakers, M Bauer
US Patent 8,530,340, 2013
64*2013
Interplay of dislocation network and island arrangement in SiGe films grown on Si (001)
C Teichert, C Hofer, K Lyutovich, M Bauer, E Kasper
Thin Solid Films 380 (1-2), 25-28, 2000
592000
Quantitative secondary ion mass spectrometry analysis of SiO2 desorption during in situ heat cleaning
E Kasper, M Bauer, M Oehme
Thin Solid Films 321 (1-2), 148-152, 1998
581998
Epitaxial semiconductor deposition methods and structures
PD Brabant, JP Italiano, CJ Arena, P Tomasini, I Raaijmakers, M Bauer
US Patent 7,238,595, 2007
572007
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