| 633-nm InGaN-based red LEDs grown on thick underlying GaN layers with reduced in-plane residual stress D Iida, Z Zhuang, P Kirilenko, M Velazquez-Rizo, MA Najmi, K Ohkawa Applied Physics Letters 116 (16), 2020 | 120 | 2020 |
| Demonstration of low forward voltage InGaN-based red LEDs D Iida, Z Zhuang, P Kirilenko, M Velazquez-Rizo, K Ohkawa Applied Physics Express 13 (3), 031001, 2020 | 71 | 2020 |
| High Color Rendering Index Hybrid III‐Nitride/Nanocrystals White Light‐Emitting Diodes Z Zhuang, X Guo, B Liu, F Hu, Y Li, T Tao, J Dai, T Zhi, Z Xie, P Chen, ... Advanced Functional Materials 26 (1), 36-43, 2016 | 71 | 2016 |
| InGaN-based red light-emitting diodes: from traditional to micro-LEDs Z Zhuang, D Iida, K Ohkawa Japanese Journal of Applied Physics 61 (SA), SA0809, 2021 | 51 | 2021 |
| A new strategy of lithography based on phase separation of polymer blends X Guo, L Liu, Z Zhuang, X Chen, M Ni, Y Li, Y Cui, P Zhan, C Yuan, H Ge, ... Scientific reports 5 (1), 15947, 2015 | 49 | 2015 |
| Investigation of InGaN-based red/green micro-light-emitting diodes Z Zhuang, D Iida, K Ohkawa Optics Letters 46 (8), 1912-1915, 2021 | 46 | 2021 |
| Effects of size on the electrical and optical properties of InGaN-based red light-emitting diodes Z Zhuang, D Iida, K Ohkawa Applied Physics Letters 116 (17), 2020 | 46 | 2020 |
| Hybrid Light Emitters and UV Solar‐Blind Avalanche Photodiodes based on III‐Nitride Semiconductors B Liu, D Chen, H Lu, T Tao, Z Zhuang, Z Shao, W Xu, H Ge, T Zhi, F Ren, ... Advanced Materials 32 (27), 1904354, 2020 | 41 | 2020 |
| Great enhancement in the excitonic recombination and light extraction of highly ordered InGaN/GaN elliptic nanorod arrays on a wafer scale Z Zhuang, X Guo, B Liu, F Hu, J Dai, Y Zhang, Y Li, T Tao, T Zhi, Z Xie, ... Nanotechnology 27 (1), 015301, 2015 | 41 | 2015 |
| Large-scale fabrication and luminescence properties of GaN nanostructures by a soft UV-curing nanoimprint lithography Z Zhuang, X Guo, G Zhang, B Liu, R Zhang, T Zhi, T Tao, H Ge, F Ren, ... Nanotechnology 24 (40), 405303, 2013 | 39 | 2013 |
| Optimal ITO transparent conductive layers for InGaN-based amber/red light-emitting diodes Z Zhuang, D Iida, P Kirilenko, M Velazquez-Rizo, K Ohkawa Optics Express 28 (8), 12311-12321, 2020 | 38 | 2020 |
| 606-nm InGaN amber micro-light-emitting diodes with an on-wafer external quantum efficiency of 0.56% Z Zhuang, D Iida, M Velazquez-Rizo, K Ohkawa IEEE Electron Device Letters 42 (7), 1029-1032, 2021 | 35 | 2021 |
| 630-nm red InGaN micro-light-emitting diodes (<20 μm × 20 μm) exceeding 1 mW/mm2 for full-color micro-displays Z Zhuang, D Iida, M Velazquez-Rizo, K Ohkawa Photonics Research 9 (9), 1796-1802, 2021 | 34 | 2021 |
| Significant improvements in InGaN/GaN nano-photoelectrodes for hydrogen generation by structure and polarization optimization T Tao, T Zhi, B Liu, M Li, Z Zhuang, J Dai, Y Li, F Jiang, W Luo, Z Xie, ... Scientific reports 6 (1), 20218, 2016 | 34 | 2016 |
| Enhanced performance of N-polar AlGaN-based deep-ultraviolet light-emitting diodes Z Zhuang, D Iida, K Ohkawa Optics Express 28 (21), 30423-30431, 2020 | 29 | 2020 |
| Manipulable and Hybridized, Ultralow‐Threshold Lasing in a Plasmonic Laser Using Elliptical InGaN/GaN Nanorods T Tao, T Zhi, B Liu, J Dai, Z Zhuang, Z Xie, P Chen, F Ren, D Chen, ... Advanced Functional Materials 27 (37), 1703198, 2017 | 25 | 2017 |
| Demonstration of 621-nm-wavelength InGaN-based single-quantum-well LEDs with an external quantum efficiency of 4.3% at 10.1 A/cm2 D Iida, P Kirilenko, M Velazquez-Rizo, Z Zhuang, MA Najmi, K Ohkawa AIP Advances 12 (6), 2022 | 23 | 2022 |
| Fabrication of AlGaN nanorods with different Al compositions for emission enhancement in UV range J Dai, B Liu, Z Zhuang, G He, T Zhi, T Tao, Q Xu, Y Li, H Ge, Z Xie, ... Nanotechnology 28 (38), 385205, 2017 | 23 | 2017 |
| Ultrasmall and ultradense InGaN-based RGB monochromatic micro-light-emitting diode arrays by pixilation of conductive p-GaN Z Zhuang, D Iida, K Ohkawa Photonics Research 9 (12), 2429-2434, 2021 | 22 | 2021 |
| Optical polarization characteristics of c-plane InGaN/GaN asymmetric nanostructures Z Zhuang, Y Li, B Liu, X Guo, J Dai, G Zhang, T Tao, T Zhi, Z Xie, H Ge, ... Journal of Applied Physics 118 (23), 2015 | 22 | 2015 |
