| Metal–Semiconductor–Metal ε-Ga2O3 Solar-Blind Photodetectors with a Record-High Responsivity Rejection Ratio and Their Gain Mechanism Y Qin, L Li, X Zhao, GS Tompa, H Dong, G Jian, Q He, P Tan, X Hou, ... Acs Photonics 7 (3), 812-820, 2020 | 203 | 2020 |
| High‐Performance Harsh‐Environment‐Resistant GaOX Solar‐Blind Photodetectors via Defect and Doping Engineering X Hou, X Zhao, Y Zhang, Z Zhang, Y Liu, Y Qin, P Tan, C Chen, S Yu, ... Advanced Materials 34 (1), 2106923, 2022 | 193 | 2022 |
| Review of polymorphous Ga2O3 materials and their solar-blind photodetector applications X Hou, Y Zou, M Ding, Y Qin, Z Zhang, X Ma, P Tan, S Yu, X Zhou, X Zhao, ... Journal of Physics D: Applied Physics 54 (4), 043001, 2020 | 175 | 2020 |
| Ultra‐High Performance Amorphous Ga2O3 Photodetector Arrays for Solar‐Blind Imaging Y Qin, LH Li, Z Yu, F Wu, D Dong, W Guo, Z Zhang, JH Yuan, KH Xue, ... Advanced Science 8 (20), 2101106, 2021 | 142 | 2021 |
| Review of deep ultraviolet photodetector based on gallium oxide Y Qin, S Long, H Dong, Q He, G Jian, Y Zhang, X Hou, P Tan, Z Zhang, ... Chinese Physics B 28 (1), 018501, 2019 | 131 | 2019 |
| Amorphous gallium oxide‐based gate‐tunable high‐performance thin film phototransistor for solar‐blind imaging Y Qin, S Long, Q He, H Dong, G Jian, Y Zhang, X Hou, P Tan, Z Zhang, ... Advanced Electronic Materials 5 (7), 1900389, 2019 | 120 | 2019 |
| High-Performance Metal-Organic Chemical Vapor Deposition Grown -Ga2O3 Solar-Blind Photodetector With Asymmetric Schottky Electrodes Y Qin, H Sun, S Long, GS Tompa, T Salagaj, H Dong, Q He, G Jian, Q Liu, ... IEEE Electron Device Letters 40 (9), 1475-1478, 2019 | 111 | 2019 |
| 2.5 kV Vertical Ga2O3 Schottky Rectifier With Graded Junction Termination Extension B Wang, M Xiao, J Spencer, Y Qin, K Sasaki, MJ Tadjer, Y Zhang IEEE Electron Device Letters 44 (2), 221-224, 2022 | 75 | 2022 |
| Ultrahigh-Performance Solar-Blind Photodetector Based on -Phase- Dominated Ga2O3 Film With Record Low Dark Current of 81 fA X Hou, H Sun, S Long, GS Tompa, T Salagaj, Y Qin, Z Zhang, P Tan, S Yu, ... IEEE Electron Device Letters 40 (9), 1483-1486, 2019 | 72 | 2019 |
| Schottky Barrier Rectifier Based on (100)-Ga2O3and its DC and AC Characteristics Q He, W Mu, B Fu, Z Jia, S Long, Z Yu, Z Yao, W Wang, H Dong, Y Qin, ... IEEE Electron Device Letters 39 (4), 556-559, 2018 | 71 | 2018 |
| Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective Y Qin, B Albano, J Spencer, JS Lundh, B Wang, C Buttay, M Tadjer, ... Journal of physics D: applied physics 56 (9), 093001, 2023 | 68 | 2023 |
| Enhancement-Mode -Ga2O3 Metal–Oxide–Semiconductor Field-Effect Solar-Blind Phototransistor With Ultrahigh Detectivity and Photo-to-Dark Current Ratio Y Qin, H Dong, S Long, Q He, G Jian, Y Zhang, X Zhou, Y Yu, X Hou, ... IEEE Electron Device Letters 40 (5), 742-745, 2019 | 67 | 2019 |
| Progress of power field effect transistor based on ultra-wide bandgap Ga2O3 semiconductor material H Dong, H Xue, Q He, Y Qin, G Jian, S Long, M Liu Journal of Semiconductors 40 (1), 011802, 2019 | 63 | 2019 |
| Fast Switching -Ga2O3 Power MOSFET With a Trench-Gate Structure H Dong, S Long, H Sun, X Zhao, Q He, Y Qin, G Jian, X Zhou, Y Yu, ... IEEE Electron Device Letters 40 (9), 1385-1388, 2019 | 61 | 2019 |
| Recent progress of Ga2O3 power technology: large-area devices, packaging and applications Y Qin, Z Wang, K Sasaki, J Ye, Y Zhang Japanese Journal of Applied Physics 62 (SF), SF0801, 2023 | 59 | 2023 |
| Characterization of the inhomogeneous barrier distribution in a Pt/(100) β-Ga2O3 Schottky diode via its temperature-dependent electrical properties G Jian, Q He, W Mu, B Fu, H Dong, Y Qin, Y Zhang, H Xue, S Long, Z Jia, ... AIP Advances 8 (1), 2018 | 59 | 2018 |
| CV and JV investigation of HfO2/Al2O3 bilayer dielectrics MOSCAPs on (100) β-Ga2O3 H Dong, W Mu, Y Hu, Q He, B Fu, H Xue, Y Qin, G Jian, Y Zhang, S Long, ... AIP Advances 8 (6), 2018 | 50 | 2018 |
| Artificial neuronal devices based on emerging materials: neuronal dynamics and applications H Liu, Y Qin, HY Chen, J Wu, J Ma, Z Du, N Wang, J Zou, S Lin, X Zhang, ... Advanced Materials 35 (37), 2205047, 2023 | 42 | 2023 |
| 10-kV Ga2O3 Charge-Balance Schottky Rectifier Operational at 200 °C Y Qin, M Xiao, M Porter, Y Ma, J Spencer, Z Du, AG Jacobs, K Sasaki, ... IEEE Electron Device Letters 44 (8), 1268-1271, 2023 | 42 | 2023 |
| Facile synthesis and photocatalytic performance of Mg2SnO4/SnO2 heterostructures Y Qin, J Xiong, W Zhang, L Liu, Y Cui, H Gu Journal of Materials Science 50, 5865-5872, 2015 | 33 | 2015 |
Yuhao ZhangUniversity of Hong KongVerified email at hku.hk
