| The rectenna device: From theory to practice (a review) E Donchev, JS Pang, PM Gammon, A Centeno, F Xie, PK Petrov, ... MRS Energy & Sustainability 1, E1, 2014 | 128 | 2014 |
| Modelling the inhomogeneous SiC Schottky interface PM Gammon, A Pérez-Tomás, VA Shah, O Vavasour, E Donchev, ... Journal of Applied Physics 114 (22), 2013 | 93 | 2013 |
| Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN A Fontserč, A Pérez-Tomás, M Placidi, J Llobet, N Baron, S Chenot, ... Applied Physics Letters 99 (21), 2011 | 58 | 2011 |
| Si∕ SiC heterojunctions fabricated by direct wafer bonding MR Jennings, A Pérez-Tomás, OJ Guy, R Hammond, SE Burrows, ... Electrochemical and Solid-State Letters 11 (11), H306, 2008 | 38 | 2008 |
| Analysis of inhomogeneous Ge/SiC heterojunction diodes PM Gammon, A Pérez-Tomás, VA Shah, GJ Roberts, MR Jennings, ... Journal of Applied Physics 106 (9), 2009 | 32 | 2009 |
| Si/SiC bonded wafer: A route to carbon free SiO2 on SiC A Pérez-Tomás, M Lodzinski, OJ Guy, MR Jennings, M Placidi, J Llobet, ... Applied Physics Letters 94 (10), 2009 | 32 | 2009 |
| Modeling the effect of thin gate insulators (SiO2, SiN, Al2O3 and HfO2) on AlGaN/GaN HEMT forward characteristics grown on Si, sapphire and SiC A Pérez-Tomás, A Fontserč, MR Jennings, PM Gammon Materials science in semiconductor processing 16 (5), 1336-1345, 2013 | 31 | 2013 |
| Silicon and the wide bandgap semiconductors, shaping the future power electronic device market P Gammon 2013 14th International Conference on Ultimate Integration on Silicon (ULIS …, 2013 | 31 | 2013 |
| Temperature dependence of Al/Ti-based Ohmic contact to GaN devices: HEMT and MOSFET A Fontserč, A Pérez-Tomás, M Placidi, P Fernández-Martínez, N Baron, ... Microelectronic engineering 88 (10), 3140-3144, 2011 | 31 | 2011 |
| Schottky contacts to silicon carbide: Physics, technology and applications F Roccaforte, G Brezeanu, PM Gammon, F Giannazzo, S Rascunŕ, ... Advancing Silicon Carbide Electronics Technology, I: Metal Contacts to …, 2018 | 26 | 2018 |
| Investigation of parasitic turn-ON in silicon IGBT and Silicon Carbide MOSFET devices: A technology evaluation S Jahdi, O Alatise, J Ortiz-Gonzalez, P Gammon, L Ran, P Mawby 2015 17th European Conference on Power Electronics and Applications (EPE'15 …, 2015 | 24 | 2015 |
| On the Ti3SiC2 Metallic Phase Formation for Robust p-Type 4H-SiC Ohmic Contacts MR Jennings, CA Fisher, D Walker, A Sanchez, A Pérez-Tomás, ... Materials Science Forum 778, 693-696, 2014 | 21 | 2014 |
| Interface characteristics of nn and pn Ge/SiC heterojunction diodes formed by molecular beam epitaxy deposition PM Gammon, A Pérez-Tomás, MR Jennings, VA Shah, SA Boden, ... Journal of Applied Physics 107 (12), 2010 | 21 | 2010 |
| On The Schottky Barrier Height Lowering Effect of Ti3SiC2 in Ohmic Contacts to P-Type 4H-SiC: Nanophysics CA Fisher, MR Jennings, YK Sharma, A Sanchez-Fuentes, D Walker, ... International Journal of Fundamental Physical Sciences 4 (3), 95-100, 2014 | 19 | 2014 |
| Cryogenic characterization of commercial SiC power MOSFETs H Chen, PM Gammon, VA Shah, CA Fisher, CW Chan, S Jahdi, ... Materials Science Forum 821, 777-780, 2015 | 18 | 2015 |
| Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors A Fontsere, A Pérez-Tomás, M Placidi, J Llobet, N Baron, S Chenot, ... Nanotechnology 23 (39), 395204, 2012 | 18 | 2012 |
| Improved performance of 4H-SiC PiN diodes using a novel combined high temperature oxidation and annealing process CA Fisher, MR Jennings, YK Sharma, DP Hamilton, PM Gammon, ... IEEE Transactions on Semiconductor Manufacturing 27 (3), 443-451, 2014 | 17 | 2014 |
| Modelling the metal–semiconductor band structure in implanted ohmic contacts to GaN and SiC A Pérez-Tomás, A Fontserč, M Placidi, MR Jennings, PM Gammon Modelling and Simulation in Materials Science and Engineering 21 (3), 035004, 2013 | 17 | 2013 |
| A study of temperature-related non-linearity at the metal-silicon interface PM Gammon, E Donchev, A Pérez-Tomás, VA Shah, JS Pang, PK Petrov, ... Journal of Applied Physics 112 (11), 2012 | 17 | 2012 |
| 3C-SiC transistor with ohmic contacts defined at room temperature F Li, Y Sharma, D Walker, S Hindmarsh, M Jennings, D Martin, C Fisher, ... IEEE Electron Device Letters 37 (9), 1189-1192, 2016 | 16 | 2016 |
phil mawbyprofessor of power electronics, School of Engineering, university of warwick, UKVerified email at warwick.ac.uk
