Peter Gammon
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The rectenna device: From theory to practice (a review)
E Donchev, JS Pang, PM Gammon, A Centeno, F Xie, PK Petrov, ...
MRS Energy & Sustainability 1, E1, 2014
Modelling the inhomogeneous SiC Schottky interface
PM Gammon, A Pérez-Tomás, VA Shah, O Vavasour, E Donchev, ...
Journal of Applied Physics 114 (22), 2013
Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN
A Fontserč, A Pérez-Tomás, M Placidi, J Llobet, N Baron, S Chenot, ...
Applied Physics Letters 99 (21), 2011
Si∕ SiC heterojunctions fabricated by direct wafer bonding
MR Jennings, A Pérez-Tomás, OJ Guy, R Hammond, SE Burrows, ...
Electrochemical and Solid-State Letters 11 (11), H306, 2008
Analysis of inhomogeneous Ge/SiC heterojunction diodes
PM Gammon, A Pérez-Tomás, VA Shah, GJ Roberts, MR Jennings, ...
Journal of Applied Physics 106 (9), 2009
Si/SiC bonded wafer: A route to carbon free SiO2 on SiC
A Pérez-Tomás, M Lodzinski, OJ Guy, MR Jennings, M Placidi, J Llobet, ...
Applied Physics Letters 94 (10), 2009
Modeling the effect of thin gate insulators (SiO2, SiN, Al2O3 and HfO2) on AlGaN/GaN HEMT forward characteristics grown on Si, sapphire and SiC
A Pérez-Tomás, A Fontserč, MR Jennings, PM Gammon
Materials science in semiconductor processing 16 (5), 1336-1345, 2013
Silicon and the wide bandgap semiconductors, shaping the future power electronic device market
P Gammon
2013 14th International Conference on Ultimate Integration on Silicon (ULIS …, 2013
Temperature dependence of Al/Ti-based Ohmic contact to GaN devices: HEMT and MOSFET
A Fontserč, A Pérez-Tomás, M Placidi, P Fernández-Martínez, N Baron, ...
Microelectronic engineering 88 (10), 3140-3144, 2011
Schottky contacts to silicon carbide: Physics, technology and applications
F Roccaforte, G Brezeanu, PM Gammon, F Giannazzo, S Rascunŕ, ...
Advancing Silicon Carbide Electronics Technology, I: Metal Contacts to …, 2018
Investigation of parasitic turn-ON in silicon IGBT and Silicon Carbide MOSFET devices: A technology evaluation
S Jahdi, O Alatise, J Ortiz-Gonzalez, P Gammon, L Ran, P Mawby
2015 17th European Conference on Power Electronics and Applications (EPE'15 …, 2015
On the Ti3SiC2 Metallic Phase Formation for Robust p-Type 4H-SiC Ohmic Contacts
MR Jennings, CA Fisher, D Walker, A Sanchez, A Pérez-Tomás, ...
Materials Science Forum 778, 693-696, 2014
Interface characteristics of nn and pn Ge/SiC heterojunction diodes formed by molecular beam epitaxy deposition
PM Gammon, A Pérez-Tomás, MR Jennings, VA Shah, SA Boden, ...
Journal of Applied Physics 107 (12), 2010
On The Schottky Barrier Height Lowering Effect of Ti3SiC2 in Ohmic Contacts to P-Type 4H-SiC: Nanophysics
CA Fisher, MR Jennings, YK Sharma, A Sanchez-Fuentes, D Walker, ...
International Journal of Fundamental Physical Sciences 4 (3), 95-100, 2014
Cryogenic characterization of commercial SiC power MOSFETs
H Chen, PM Gammon, VA Shah, CA Fisher, CW Chan, S Jahdi, ...
Materials Science Forum 821, 777-780, 2015
Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors
A Fontsere, A Pérez-Tomás, M Placidi, J Llobet, N Baron, S Chenot, ...
Nanotechnology 23 (39), 395204, 2012
Improved performance of 4H-SiC PiN diodes using a novel combined high temperature oxidation and annealing process
CA Fisher, MR Jennings, YK Sharma, DP Hamilton, PM Gammon, ...
IEEE Transactions on Semiconductor Manufacturing 27 (3), 443-451, 2014
Modelling the metal–semiconductor band structure in implanted ohmic contacts to GaN and SiC
A Pérez-Tomás, A Fontserč, M Placidi, MR Jennings, PM Gammon
Modelling and Simulation in Materials Science and Engineering 21 (3), 035004, 2013
A study of temperature-related non-linearity at the metal-silicon interface
PM Gammon, E Donchev, A Pérez-Tomás, VA Shah, JS Pang, PK Petrov, ...
Journal of Applied Physics 112 (11), 2012
3C-SiC transistor with ohmic contacts defined at room temperature
F Li, Y Sharma, D Walker, S Hindmarsh, M Jennings, D Martin, C Fisher, ...
IEEE Electron Device Letters 37 (9), 1189-1192, 2016
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