| N-polar GaN epitaxy and high electron mobility transistors Man Hoi Wong, Stacia Keller, Nidhi, Sansaptak Dasgupta, Daniel J Denninghoff ... Semiconductor Science and Technology 28 (7), 074009, 2013 | 254 | 2013 |
| 3D heterogeneous integration of high performance high-K metal gate GaN NMOS and Si PMOS transistors on 300mm high-resistivity Si substrate for energy-efficient and compact … HW Then, S Dasgupta, M Radosavljevic, P Agababov, I Ban, R Bristol, ... 2019 IEEE International Electron Devices Meeting (IEDM), 17.3. 1-17.3. 4, 2019 | 202 | 2019 |
| Ultralow nonalloyed ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In (Ga) N regrowth S Dasgupta, N Nidhi, DF Brown, F Wu, S Keller, JS Speck, UK Mishra Applied physics letters 96 (14), 2010 | 163 | 2010 |
| Trench confined epitaxially grown device layer (s) R Pillarisetty, SH Sung, N Goel, JT Kavalieros, S Dasgupta, VH Le, ... US Patent 8,765,563, 2014 | 108 | 2014 |
| AlGaN channel high electron mobility transistors: Device performance and power-switching figure of merit A Raman, S Dasgupta, S Rajan, JS Speck, UK Mishra Japanese Journal of Applied Physics 47 (5R), 3359, 2008 | 95 | 2008 |
| Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation S Dasgupta, HW Then, M Radosavljevic, N Mukherjee, N Goel, S Kabehie, ... US Patent 9,099,490, 2015 | 93 | 2015 |
| Effects of threading dislocation density on the gate leakage of AlGaN/GaN heterostructures for high electron mobility transistors SW Kaun, MH Wong, S Dasgupta, S Choi, R Chung, UK Mishra, JS Speck Applied physics express 4 (2), 024101, 2011 | 92 | 2011 |
| Design of High-Aspect-Ratio T-Gates on N-Polar GaN/AlGaN MIS-HEMTs for High DJ Denninghoff, S Dasgupta, J Lu, S Keller, UK Mishra IEEE electron device letters 33 (6), 785-787, 2012 | 82 | 2012 |
| Growth of high quality N-polar AlN (0001) on Si (111) by plasma assisted molecular beam epitaxy S Dasgupta, F Wu, JS Speck, UK Mishra Applied Physics Letters 94 (15), 2009 | 81 | 2009 |
| Enhancement-mode N-polar GaN MISFETs with self-aligned source/drain regrowth U Singisetti, MH Wong, S Dasgupta, B Swenson, BJ Thibeault, JS Speck, ... IEEE Electron Device Letters 32 (2), 137-139, 2010 | 69 | 2010 |
| Experimental observation and physics of “negative” capacitance and steeper than 40mV/decade subthreshold swing in Al0.83In0.17N/AlN/GaN MOS-HEMT on SiC substrate HW Then, S Dasgupta, M Radosavljevic, L Chow, B Chu-Kung, G Dewey, ... Electron Devices Meeting (IEDM), 2013 IEEE International, 28.3.1 - 28.3.4, 2013 | 57* | 2013 |
| Nonplanar III-N transistors with compositionally graded semiconductor channels HW Then, S Dasgupta, M Radosavljevic, B Chu-Kung, SH Sung, ... US Patent 8,896,101, 2014 | 52 | 2014 |
| Epitaxial buffer layers for group III-N transistors on silicon substrates S Dasgupta, HW Then, N Mukherjee, M Radosavljevic, RS Chau US Patent 9,583,574, 2017 | 47 | 2017 |
| III-N devices in Si trenches S Dasgupta, HW Then, SK Gardner, SH Sung, M Radosavljevic, ... US Patent 9,640,422, 2017 | 38 | 2017 |
| High breakdown voltage III-N depletion mode MOS capacitors HW Then, S Dasgupta, G Schrom, VR Rao, RS Chau US Patent 9,064,709, 2015 | 38 | 2015 |
| Self-aligned N-polar GaN/InAlN MIS-HEMTs with record extrinsic transconductance of 1105 mS/mm S Dasgupta, J Lu, JS Speck, UK Mishra IEEE Electron Device Letters 33 (6), 794-796, 2012 | 37 | 2012 |
| Growth, structural, and electrical characterizations of N-polar InAlN by plasma-assisted molecular beam epitaxy S Dasgupta, N Choi, F Wu, JS Speck, UK Mishra Applied physics express 4 (4), 045502, 2011 | 36 | 2011 |
| Scaled Self-Aligned N-Polar GaN/AlGaN MIS-HEMTs Withof 275 GHz S Dasgupta, J Lu, JS Speck, UK Mishra IEEE electron device letters 33 (7), 961-963, 2012 | 33 | 2012 |
| High-performance low-leakage enhancement-mode high-K dielectric GaN MOSHEMTs for energy-efficient, compact voltage regulators and RF power amplifiers for low-power mobile SoCs HW Then, LA Chow, S Dasgupta, S Gardner, M Radosavljevic, VR Rao, ... 2015 Symposium on VLSI Technology (VLSI Technology), T202-T203, 2015 | 29 | 2015 |
| Experimental demonstration of III-nitride hot-electron transistor with GaN base S Dasgupta, A Raman, JS Speck, UK Mishra IEEE electron device letters 32 (9), 1212-1214, 2011 | 29 | 2011 |
