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kazuo yano
kazuo yano
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Cited by
Year
A 3.8-ns CMOS 16* 16-b multiplier using complementary pass-transistor logic
K Yano, T Yamanaka, T Nishida, M Saito, K Shimohigashi, A Shimizu
IEEE journal of solid-state circuits 25 (2), 388-395, 1990
7221990
Room-temperature single-electron memory
K Yano, T Ishii, T Hashimoto, T Kobayashi, F Murai, K Seki
IEEE Transactions on Electron Devices 41 (9), 1628-1638, 1994
6381994
Top-down pass-transistor logic design
K Yano, Y Sasaki, K Rikino, K Seki
IEEE journal of solid-state circuits 31 (6), 792-803, 1996
3891996
Single-electron memory for giga-to-tera bit storage
K Yano, T Ishii, T Sano, T Mine, F Murai, T Hashimoto, T Kobayashi, ...
Proceedings of the IEEE 87 (4), 633-651, 1999
2681999
Semiconductor integrated circuit device and production method thereof
K Yano, Y Sasaki
US Patent 5,581,202, 1996
2031996
A poly-silicon TFT with a sub-5-nm thick channel for low-power gain cell memory in mobile applications
T Ishii, T Osabe, T Mine, T Sano, B Atwood, K Yano
IEEE Transactions on Electron Devices 51 (11), 1805-1810, 2004
1932004
Semiconductor integrated circuit device, storage medium on which cell library is stored and designing method for semiconductor integrated circuit
N Katoh, K Yano, Y Akita, M Hiraki
US Patent 6,769,110, 2004
1742004
Semiconductor integrated circuit for low power and high speed operation
I Kono, K Yano, N Kato
US Patent 6,515,521, 2003
1282003
Electric-energy generation using variable-capacitive resonator for power-free LSI: efficiency analysis and fundamental experiment
M Miyazaki, H Tanaka, G Ono, T Nagano, N Ohkubo, T Kawahara, K Yano
Proceedings of the 2003 international symposium on Low power electronics and …, 2003
1272003
Predictability of conversation partners
T Takaguchi, M Nakamura, N Sato, K Yano, N Masuda
Physical Review X 1 (1), 011008, 2011
1142011
Performance and hot-carrier effects of small CRYO-CMOS devices
M Aoki, S Hanamura, T Masuhara, K Yano
IEEE transactions on electron devices 34 (1), 8-18, 1987
1001987
Transport characteristics of polycrystalline‐silicon wire influenced by single‐electron charging at room temperature
K Yano, T Ishii, T Hashimoto, T Kobayashi, F Murai, K Seki
Applied physics letters 67 (6), 828-830, 1995
911995
A 15--15 mm, 1 μA, reliable sensor-net module: enabling application-specific nodes
S Yamashita, T Shimura, K Aiki, K Ara, Y Ogata, I Shimokawa, T Tanaka, ...
Proceedings of the 5th international conference on Information processing in …, 2006
772006
Semiconductor memory device
T Sano, T Ishii, K Yano, T Mine
US Patent 6,040,605, 2000
772000
Sensible organizations: Changing our businesses and work styles through sensor data
K Ara, N Kanehira, DO Olguin, BN Waber, T Kim, A Mohan, P Gloor, ...
Journal of Information Processing 16, 1-12, 2008
702008
Semiconductor device for reducing leak currents and controlling a threshold voltage and using a thin channel structure
T Ishii, K Yano, T Mine
US Patent 6,576,943, 2003
682003
Semiconductor memories
B Atwood, K Yano, T Ishii, T Osabe, K Yanagisawa, T Sakata
US Patent 6,787,835, 2004
622004
Semiconductor memory device
T Ishii, K Yano
US Patent 6,646,300, 2003
582003
Single-electron-memory integrated circuit for giga-to-tera bit storage
K Yano, T Ishii, T Sano, T Mine, F Murai, K Seki
1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical …, 1996
561996
A 128 Mb early prototype for gigascale single-electron memories
K Yano, T Ishii, T Sane, T Mine, F Murai, T Kure, K Seki
1998 IEEE International Solid-State Circuits Conference. Digest of Technical …, 1998
511998
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Articles 1–20