Raghavan Nagarajan
TitleCited byYear
Resistive switching: from fundamentals of nanoionic redox processes to memristive device applications
D Ielmini, R Waser
John Wiley & Sons, 2015
1882015
Intrinsic switching variability in HfO2RRAM
A Fantini, L Goux, R Degraeve, DJ Wouters, N Raghavan, G Kar, ...
2013 5th IEEE International Memory Workshop, 30-33, 2013
1222013
A framework to practical predictive maintenance modeling for multi-state systems
CM Tan, N Raghavan
Reliability Engineering & System Safety 93 (8), 1138-1150, 2008
892008
Improvement of data retention in HfO2/Hf 1T1R RRAM cell under low operating current
YY Chen, M Komura, R Degraeve, B Govoreanu, L Goux, A Fantini, ...
2013 IEEE International Electron Devices Meeting, 10.1. 1-10.1. 4, 2013
832013
Intrinsic nanofilamentation in resistive switching
X Wu, D Cha, M Bosman, N Raghavan, DB Migas, VE Borisenko, ...
Journal of Applied Physics 113 (11), 114503, 2013
622013
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
572019
Microscopic origin of random telegraph noise fluctuations in aggressively scaled RRAM and its impact on read disturb variability
N Raghavan, R Degraeve, A Fantini, L Goux, S Strangio, B Govoreanu, ...
2013 IEEE International Reliability Physics Symposium (IRPS), 5E. 3.1-5E. 3.7, 2013
522013
Fabrication of RRAM Cell Using CMOS Compatible Processes
W Liu, KL Pey, N Raghavan, CM Ng
US Patent App. 13/052,864, 2012
412012
Role of oxygen vacancies in -based gate stack breakdown
X Wu, DB Migas, X Li, M Bosman, N Raghavan, VE Borisenko, KL Pey
Applied Physics Letters 96 (17), 172901, 2010
412010
RTN insight to filamentary instability and disturb immunity in ultra-low power switching HfOx and AlOx RRAM
N Raghavan, R Degraeve, L Goux, A Fantini, DJ Wouters, ...
2013 Symposium on VLSI Technology, T164-T165, 2013
402013
Study of preferential localized degradation and breakdown of HfO2/SiOx dielectric stacks at grain boundary sites of polycrystalline HfO2 dielectrics
K Shubhakar, KL Pey, N Raghavan, SS Kushvaha, M Bosman, Z Wang, ...
Microelectronic Engineering 109, 364-369, 2013
372013
Evidence for compliance controlled oxygen vacancy and metal filament based resistive switching mechanisms in RRAM
N Raghavan, KL Pey, W Liu, X Wu, X Li, M Bosman
Microelectronic Engineering 88 (7), 1124-1128, 2011
372011
Causes and consequences of the stochastic aspect of filamentary RRAM
R Degraeve, A Fantini, N Raghavan, L Goux, S Clima, B Govoreanu, ...
Microelectronic Engineering 147, 171-175, 2015
352015
Stochastic variability of vacancy filament configuration in ultra-thin dielectric RRAM and its impact on OFF-state reliability
N Raghavan, R Degraeve, A Fantini, L Goux, DJ Wouters, ...
2013 IEEE International Electron Devices Meeting, 21.1. 1-21.1. 4, 2013
342013
Understanding of the intrinsic characteristics and memory trade-offs of sub-μA filamentary RRAM operation
L Goux, A Fantini, R Degraeve, N Raghavan, R Nigon, S Strangio, G Kar, ...
2013 Symposium on VLSI Technology, T162-T163, 2013
312013
Modified Percolation Model for Polycrystalline High-Gate Stack With Grain Boundary Defects
N Raghavan, KL Pey, K Shubhakar, M Bosman
IEEE Electron Device Letters 32 (1), 78-80, 2010
312010
Grain boundary assisted degradation and breakdown study in cerium oxide gate dielectric using scanning tunneling microscopy
K Shubhakar, KL Pey, SS Kushvaha, SJ O’Shea, N Raghavan, M Bosman, ...
Applied Physics Letters 98 (7), 072902, 2011
302011
Resistive switching in NiSi gate metal-oxide-semiconductor transistors
X Li, WH Liu, N Raghavan, M Bosman, KL Pey
Applied Physics Letters 97 (20), 202904, 2010
302010
Uncorrelated multiple conductive filament nucleation and rupture in ultra-thin high-κ dielectric based resistive random access memory
X Wu, K Li, N Raghavan, M Bosman, QX Wang, D Cha, XX Zhang, KL Pey
Applied Physics Letters 99 (9), 093502, 2011
292011
Electrode material dependent breakdown and recovery in advanced high- gate stacks
X Wu, KL Pey, G Zhang, P Bai, X Li, WH Liu, N Raghavan
Applied Physics Letters 96 (20), 202903, 2010
292010
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