A physical model for the reverse leakage current in (In, Ga) N/GaN light-emitting diodes based on nanowires M Musolino, D Van Treeck, A Tahraoui, L Scarparo, C De Santi, ... Journal of Applied Physics 119 (4), 2016 | 45 | 2016 |
High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the material quality of bulk GaN JK Zettler, C Hauswald, P Corfdir, M Musolino, L Geelhaar, H Riechert, ... Crystal Growth & Design 15 (8), 4104-4109, 2015 | 40 | 2015 |
Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes M Musolino, A Tahraoui, S Fernández-Garrido, O Brandt, A Trampert, ... Nanotechnology 26 (8), 085605, 2015 | 40 | 2015 |
Paving the way toward the world's first 200mm SiC pilot line M Musolino, X Xu, H Wang, V Rengarajan, I Zwieback, G Ruland, ... Materials Science in Semiconductor Processing 135, 106088, 2021 | 24 | 2021 |
Understanding peculiarities in the optoelectronic characteristics of light emitting diodes based on (In, Ga) N/GaN nanowires M Musolino, A Tahraoui, F Limbach, J Lähnemann, U Jahn, O Brandt, ... Applied Physics Letters 105 (8), 2014 | 22 | 2014 |
Electroluminescence and current–voltage measurements of single-(In,Ga)N/GaN-nanowire light-emitting diodes in a nanowire ensemble HRLG David van Treeck, Johannes Ledig, Gregor Scholz, Jonas Lähnemann ... Beilstein J. Nanotechnol. 10, 1177-1187, 2019 | 9 | 2019 |
Pixel design driven performance improvement in 4T CMOS image sensors: Dark current reduction and full-well enhancement AM Brunetti, M Musolino, S Strangio, B Choubey IEEE Transactions on Electron Devices 67 (1), 409-412, 2019 | 6 | 2019 |
Effect of varying three-dimensional strain on the emission properties of light-emitting diodes based on (In,Ga)N/GaN nanowires M Musolino, A Tahraoui, L Geelhaar, F Sacconi, F Panetta, C De Santi, ... Physical Review Applied 7, 044014, 2017 | 5 | 2017 |
A modified Shockley equation taking into account the multi-element nature of light emitting diodes based on nanowire ensembles M Musolino, A Tahraoui, D van Treeck, L Geelhaar, H Riechert Nanotechnology 27 (27), 275203, 2016 | 5 | 2016 |
Development of n-type epitaxial growth on 200 mm 4H-SiC wafers for the next generation of power devices M Musolino, E Carria, D Crippa, S Preti, M Azadmand, M Mauceri, ... Microelectronic Engineering 274, 111976, 2023 | 3 | 2023 |
Staggered pixel layout to reduce area and increase full well capacity in CMOS image sensors AM Brunetti, M Musolino, B Choubey IEEE Transactions on Electron Devices 68 (2), 572-577, 2021 | 3 | 2021 |
Growth, fabrication, and investigation of light-emitting diodes based on GaN nanowires M Musolino Humboldt-Universität zu Berlin, 2016 | 3 | 2016 |
The hydride vapor phase epitaxy of GaN on silicon covered by nanostructures U Jahn, M Musolino, J Lähnemann, P Dogan, SF Garrido, JF Wang, K Xu, ... Semiconductor Science and Technology 31 (6), 065018, 2016 | 3 | 2016 |
Deep level transient spectroscopy on light-emitting diodes based on (In, Ga) N/GaN nanowire ensembles M Musolino, M Meneghini, L Scarparo, C De Santi, A Tahraoui, ... Gallium Nitride Materials and Devices X 9363, 273-280, 2015 | 3 | 2015 |
Multiscale approach for the study of optoelectronic properties of InGaN/GaN nanowire light-emitting diodes F Sacconi, F Panetta, MA der Maur, A Di Carlo, A Pecchia, M Musolino, ... 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO), 1551-1554, 2015 | 2 | 2015 |
Thermal transient testing alternatives for the characterisation of GaN HEMT power devices Z Sarkany, M Musolino, A Sitta, M Calabretta, M Nemeth, G Farkas, ... 2022 28th International Workshop on Thermal Investigations of ICs and …, 2022 | 1 | 2022 |
Thermography Analysis of Automotive SiC Power Modules for Reliability Assessment M Musolino, G Mauromicale, DM Amoroso, L Donetti, G Sequenzia, ... 2024 25th International Conference on Thermal, Mechanical and Multi-Physics …, 2024 | | 2024 |
The effect of the three-dimensional strain variation on the emission properties of LEDs based on (In, Ga) N/GaN nanowires M Musolino, F Sacconi, C De Santi, F Panetta, A Tahraoui, M Meneghini, ... Proceedings of the 12th International Conference on Nitride Semiconductors …, 2017 | | 2017 |